4N38TM [FAIRCHILD]
Transistor Output Optocoupler, 1-Element, 7500V Isolation, PLASTIC, DIP-6;
| 型号： | 4N38TM |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Transistor Output Optocoupler, 1-Element, 7500V Isolation, PLASTIC, DIP-6 输出元件 光电 |
| 文件： | 总9页 (文件大小：243K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
September 2009
4N38M, H11D1M, H11D2M, H11D3M, MOC8204M
High Voltage Phototransistor Optocouplers
Features
General Description
■ High voltage:
The 4N38M, H11DXM and MOC8204M are photo-
transistor-type optically coupled optoisolators. A gallium
arsenide infrared emitting diode is coupled with a high
voltage NPN silicon phototransistor. The device is sup-
plied in a standard plastic six-pin dual-in-line package.
– MOC8204M, BV
= 400V
CER
– H11D1M, H11D2M, BV
= 300V
CER
– H11D3M, BV
= 200V
CER
■ High isolation voltage:
– 7500 V peak, 1 second
AC
■ Underwriters Laboratory (UL) recognized
File # E90700, Volume 2
■ IEC 60747-5-2 approved (ordering option V)
Applications
■ Power supply regulators
■ Digital logic inputs
■ Microprocessor inputs
■ Appliance sensor systems
■ Industrial controls
Schematic
Package Outlines
ANODE
CATHODE
N/C
1
6 BASE
COLLECTOR
2
3
5
4
EMITTER
©2007 Fairchild Semiconductor Corporation
4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6
www.fairchildsemi.com
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameter
Device
Value
Units
TOTAL DEVICE
T
Storage Temperature
All
All
All
All
-40 to +150
-40 to +100
260 for 10 sec
260
°C
°C
STG
T
Operating Temperature
OPR
T
Lead Solder Temperature (Wave Solder)
°C
SOL
P
Total Device Power Dissipation @ T = 25°C
mW
mW/°C
D
A
3.5
Derate Above 25°C
EMITTER
(1)
I
All
All
All
All
80
6.0
3.0
mA
V
F
Forward DC Current
(1)
V
R
Reverse Input Voltage
(1)
I (pk)
A
F
Forward Current – Peak (1µs pulse, 300pps)
(1)
P
150
mW
D
LED Power Dissipation @ T = 25°C
A
1.41
mW/°C
Derate Above 25°C
DETECTOR
P
Power Dissipation @ T = 25°C
All
300
4.0
400
300
200
80
mW
mW/°C
V
D
A
Derate linearly above 25°C
(1)
V
Collector to Emitter Voltage
MOC8204M
H11D1M, H11D2M
H11D3M
CER
CBO
ECO
4N38M
(1)
V
Collector Base Voltage
MOC8204M
H11D1M, H11D2M
H11D3M
400
300
200
80
V
4N38M
(1)
V
Emitter to Collector Voltage
H11D1M, H11D2M,
H11D3M,
7
V
MOC8204M
I
Collector Current (Continuous)
All
100
mA
C
Note:
1. Parameters meet or exceed JEDEC registered data (for 4N38M only).
©2007 Fairchild Semiconductor Corporation
4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6
www.fairchildsemi.com
2
Electrical Characteristics (T = 25°C unless otherwise specified.)
A
Individual Component Characteristics
Symbol
Characteristic
Test Conditions
Device
Min.
Typ.* Max. Unit
EMITTER
(2)
V
Forward Voltage
I = 10mA
All
All
1.15
-1.8
1.5
V
F
F
∆V
Forward Voltage
Temp. Coefficient
mV/°C
F
∆T
A
BV
Reverse Breakdown
Voltage
I
= 10µA
All
All
6
25
V
R
R
C
Junction Capacitance V = 0V, f = 1MHz
50
65
pF
pF
µA
J
F
V = 1V, f = 1MHz
F
I
Reverse Leakage
V
= 6V
R
All
0.05
10
R
(2)
Current
DETECTOR
BV
Breakdown Voltage
Collector to Emitter
R
= 1MΩ, I = 1.0mA, I = 0
MOC8204M
H11D1M/2M
H11D3M
4N38M
400
300
200
80
V
V
CER
BE
C
F
(2)
BV
BV
No RBE, I = 1.0mA
C
CEO
CBO
(2)
Collector to Base
I
= 100µA, I = 0
MOC8204M
H11D1M/2M
H11D3M
4N38M
400
300
200
80
C
F
BV
BV
Emitter to Base
I = 100µA, I = 0
4N38M
7
V
EBO
E
F
Emitter to Collector
I = 100µA, I = 0
All
7
10
V
ECO
E
F
I
Leakage Current
Collector to Emitter
V
= 300V, I = 0, T = 25°C
MOC8204M
100
250
100
250
100
250
50
nA
µA
nA
µA
nA
µA
nA
CER
CE
CE
CE
CE
CE
CE
F
A
(2)
V
V
V
V
V
= 300V, I = 0, T = 100°C
F A
(R = 1MΩ)
BE
= 200V, I = 0, T = 25°C
H11D1M/2M
H11D3M
4N38M
F
A
= 200V, I = 0, T = 100°C
F
A
= 100V, I = 0, T = 25°C
F
A
= 100V, I = 0, T = 100°C
F
A
I
No R , V = 60V, I = 0,
BE CE F
CEO
T = 25°C
A
Transfer Characteristics (T = 25°C Unless otherwise specified.)
A
Symbol
EMITTER
CTR
Characteristics
Test Conditions
Device
Min. Typ.* Max. Units
Current Transfer
Ratio, Collector to
Emitter
I = 10mA, V = 10V,
H11D1M/2M/3M,
MOC8204M
2 (20)
2 (20)
mA (%)
V
F
R
CE
= 1MΩ
BE
I = 10mA, V = 10V
4N38M
F
CE
(2)
V
Saturation Voltage
I = 10mA, I = 0.5mA,
H11D1M/2M/3M,
MOC8204M
0.1
0.40
1.0
CE(SAT)
F
R
C
= 1MΩ
BE
I = 20mA, I = 4mA
4N38M
F
C
SWITCHING TIMES
Non-Saturated
V
= 10V, I = 2mA,
All
All
5
5
t
µs
µs
CE
CE
ON
Turn-on Time
R = 100Ω
L
t
Turn-off Time
OFF
*All Typical values at T = 25°C
A
Note:
2. Parameters meet or exceed JEDEC registered data (for 4N38M only).
©2007 Fairchild Semiconductor Corporation
4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6
www.fairchildsemi.com
3
DC Electrical Characteristics (Continued) (T = 25°C unless otherwise specified.)
A
Isolation Characteristics
Symbol
Characteristic
Isolation Voltage
Test Conditions
Device
All
Min.
Typ.*
Max.
Units
V
R
C
f = 60Hz, t = 1 sec.
7500
V
PEAK
ISO
ISO
ISO
AC
11
Isolation Resistance
Isolation Capacitance
V
= 500 VDC
All
10
Ω
I-O
f = 1MHz
All
0.2
pF
*All Typical values at T = 25°C
A
Safety and Insulation Ratings
As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.
Symbol
Parameter
Min.
Typ.
Max.
Unit
Installation Classifications per DIN VDE 0110/1.89
Table 1
For Rated Main Voltage < 150Vrms
For Rated Main voltage < 300Vrms
Climatic Classification
I-IV
I-IV
55/100/21
2
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
CTI
175
V
Input to Output Test Voltage, Method b,
1594
V
V
PR
peak
V
x 1.875 = V , 100% Production Test
IORM
PR
with tm = 1 sec, Partial Discharge < 5pC
Input to Output Test Voltage, Method a,
1275
peak
V
x 1.5 = V , Type and Sample Test
PR
IORM
with tm = 60 sec, Partial Discharge < 5pC
Max. Working Insulation Voltage
Highest Allowable Over Voltage
External Creepage
V
850
6000
7
V
V
IORM
peak
V
IOTM
peak
mm
mm
mm
Ω
External Clearance
7
Insulation Thickness
0.5
9
RIO
Insulation Resistance at Ts, V = 500V
10
IO
©2007 Fairchild Semiconductor Corporation
4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6
www.fairchildsemi.com
4
Typical Performance Curves
Fig. 1 LED Forward Voltage vs. Forward Current
Fig. 2 Normalized Output Characteristics
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
Normalized to:
V
= 10V
CE
I
R
= 10mA
F
6
= 10
Ω
10
1
BE
T
A
= 25˚C
I
I
= 50mA
= 10mA
F
F
T
T
= -55˚C
= 25˚C
A
A
I
F
= 5mA
0.1
0.01
T
= 100˚C
A
0.1
1
10
100
1
10
100
I
– LED FORWARDCURRENT (mA)
V
– COLLECTOR VOLTAGE (V)
CE
F
Fig. 3 Normalized Output Current vs. LED Input Current
Fig. 4 Normalized Output Current vs.Temperature
10
Normalized to:
Normalized to:
V
= 10V
CE
V
= 10 V
CE
I
R
= 10mA
6
= 10 Ω
F
BE
I
R
T
= 10 mA
6
= 10 Ω
F
BE
T
= 25˚C
A
I
F
= 20mA
= 25˚C
A
1
I
F
= 10mA
1
I
F
= 5mA
0.1
0.01
0.1
-60
1
10
-40
-20
0
20
40
60
80
100
I
– LED INPUT CURRENT (mA)
T – AMBIENT TEMPERATURE (˚C)
A
F
Fig. 5 Normalized Dark Current vs. Ambient Temperature
Fig. 6 Normalized Collector-Base Current vs.Temperature
10
Normalized to:
Normalized to:
9
V
= 100V
6
= 10 Ω
= 25˚C
V
I
R
= 10V
CE
BE
10000
1000
100
10
CE
F
BE
R
T
= 10mA
6
8
7
6
5
4
3
2
1
0
= 10
Ω
A
I
= 50mA
F
T
A
= 25˚C
V
= 300V
CE
V
CE
= 100V
V
= 50V
50
CE
1
I
F
= 10mA
-20
I
F
= 5mA
-40
0.1
10
20
30
40
60
70
80
90
100
110
-60
0
20
40
60
80
100
T
A
– AMBIENT TEMPERATURE (˚C)
T
A
– AMBIENT TEMPERATURE (˚C)
©2007 Fairchild Semiconductor Corporation
4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6
www.fairchildsemi.com
5
Package Dimensions
Through Hole
0.4" Lead Spacing
8.13–8.89
6
4
8.13–8.89
6
4
6.10–6.60
6.10–6.60
Pin 1
1
3
Pin 1
1
3
5.08 (Max.)
3.28–3.53
0.25–0.36
7.62 (Typ.)
5.08 (Max.)
3.28–3.53
0.25–0.36
0.38 (Min.)
2.54–3.81
2.54 (Bsc)
0.38 (Min.)
2.54–3.81
2.54 (Bsc)
0.20–0.30
(0.86)
15° (Typ.)
(0.86)
0.41–0.51
0.76–1.14
0.20–0.30
10.16–10.80
1.02–1.78
0.41–0.51
0.76–1.14
1.02–1.78
Surface Mount
(1.78)
8.13–8.89
6
4
(1.52)
(2.54)
(7.49)
6.10–6.60
8.43–9.90
(10.54)
1
3
(0.76)
Pin 1
Rcommended Pad Layout
0.25–0.36
3.28–3.53
5.08
(Max.)
0.20–0.30
0.38 (Min.)
0.16–0.88
(8.13)
2.54 (Bsc)
(0.86)
0.41–0.51
0.76–1.14
1.02–1.78
Note:
All dimensions in mm.
©2007 Fairchild Semiconductor Corporation
4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6
www.fairchildsemi.com
6
Ordering Information
Order Entry Identifier
(Example)
Option
Description
No option
H11D1M
H11D1SM
Standard Through Hole Device (50 units per tube)
Surface Mount Lead Bend
S
SR2
T
H11D1SR2M
H11D1TM
Surface Mount; Tape and Reel
0.4" Lead Spacing
V
H11D1VM
VDE 0884
TV
H11D1TVM
H11D1SVM
H11D1SR2VM
VDE 0884, 0.4" Lead Spacing
VDE 0884, Surface Mount
SV
SR2V
VDE 0884, Surface Mount, Tape and Reel
Marking Information
1
2
H11D1
6
V X YY Q
5
3
4
Definitions
1
2
Fairchild logo
Device number
VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
3
4
5
6
One digit year code, e.g., ‘7’
Two digit work week ranging from ‘01’ to ‘53’
Assembly package code
©2007 Fairchild Semiconductor Corporation
4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6
www.fairchildsemi.com
7
Carrier Tape Specification
12.0 ± 0.1
2.0 ± 0.05
4.5 ± 0.20
Ø1.5 MIN
1.75 ± 0.10
0.30 ± 0.05
4.0 ± 0.1
11.5 ± 1.0
24.0 ± 0.3
9.1 ± 0.20
21.0 ± 0.1
Ø1.5 ± 0.1/-0
10.1 ± 0.20
0.1 MAX
User Direction of Feed
Reflow Profile
300
280
260
240
220
200
180
160
140
120
100
80
260°C
>245°C = 42 Sec
Time above
183°C = 90 Sec
°C
1.822°C/Sec Ramp up rate
60
40
33 Sec
20
0
0
60
120
180
270
360
Time (s)
©2007 Fairchild Semiconductor Corporation
4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6
www.fairchildsemi.com
8
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
PowerTrench®
PowerXS™
The Power Franchise®
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
EZSWITCH™*
™*
F-PFS™
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
Programmable Active Droop™
QFET®
TinyBoost™
TinyBuck™
QS™
Quiet Series™
RapidConfigure™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
™
Saving our world, 1mW/W/kW at a time™
SmartMax™
TinyWire™
TriFault Detect™
TRUECURRENT™*
µSerDes™
SMART START™
SPM®
®
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
OPTOPLANAR®
FAST®
®
FastvCore™
FETBench™
PDP SPM™
Power-SPM™
Sync-Lock™
FlashWriter®
®
*
*
FPS™
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR
CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE
SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN,
WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its
safety or effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com,
under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts.
Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications,
and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of
counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are
listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have
full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information.
Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide
any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our
customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status
Definition
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Advance Information
Preliminary
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
First Production
Full Production
Not In Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at any time without notice to improve the design.
No Identification Needed
Obsolete
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I40
©2007 Fairchild Semiconductor Corporation
4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6
www.fairchildsemi.com
9
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