BAS21_ND87Z
更新时间:2024-09-18 14:13:14
品牌:FAIRCHILD
描述:Rectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon, LEAD FREE PACKAGE-3
BAS21_ND87Z 概述
Rectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon, LEAD FREE PACKAGE-3 整流二极管
BAS21_ND87Z 规格参数
是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | R-PDSO-G3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.70 | 风险等级: | 5.57 |
Is Samacsys: | N | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | RECTIFIER DIODE |
最大正向电压 (VF): | 1 V | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
最大非重复峰值正向电流: | 1 A | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
最大输出电流: | 0.2 A | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 最大功率耗散: | 0.35 W |
认证状态: | Not Qualified | 最大重复峰值反向电压: | 250 V |
最大反向恢复时间: | 0.05 µs | 子类别: | Rectifier Diodes |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
BAS21_ND87Z 数据手册
通过下载BAS21_ND87Z数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载BAS21
CONNECTION DIAGRAM
3
3
3
A82.
2 NC
1
2
1
2
SOT-23
1
General Purpose High Voltage Diode
Sourced from Process 1H. See MMBD1401 for characteristics.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
WIV
Working Inverse Voltage
Average Rectified Current
DC Forward Current
250
200
600
700
V
IO
mA
mA
mA
IF
Recurrent Peak Forward Current
if
Peak Forward Surge Current
Pulse width = 1.0 second
if(surge)
1.0
2.0
A
A
Pulse width = 1.0 microsecond
Storage Temperature Range
-55 to +150
C
°
Tstg
TJ
Operating Junction Temperature
150
C
°
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
BAS21
PD
Total Device Dissipation
Derate above 25 C
350
2.8
mW
mW/ C
°
°
Thermal Resistance, Junction to Ambient
357
Rθ
C/W
°
JA
ã2002 Fairchild Semiconductor Corporation
BAS21. Rev. A1
General Purpose High Voltage Diode
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max Units
BV
IR
Breakdown Voltage
250
V
I = 100
A
µ
R
Reverse Voltage Leakage Current
VR = 200 V
100
100
1.0
nA
A
µ
V
V
V = 200 V, T = 150 C
°
R
A
VF
Forward Voltage
IF = 100 mA
IF = 200 mA
1.25
CO
Diode Capacitance
VR = 0, f = 1.0 MHz
5.0
pF
TRR
Reverse Recovery Time
IF = IR = 30 mA, IRR = 3.0 mA,
50
nS
R = 100
L
Ω
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
OPTOLOGICâ
OPTOPLANAR™
PACMAN™
SMART START™ VCX™
SPM™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST â
POP™
HiSeC™
Power247™
PowerTrench â
QFET™
I2C™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
TinyLogic™
QS™
TruTranslation™
UHC™
QT Optoelectronics™
Quiet Series™
SILENTSWITCHERâ
UltraFET â
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITYARISING OUT OF THE APPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICESORSYSTEMSWITHOUTTHEEXPRESSWRITTENAPPROVALOFFAIRCHILDSEMICONDUCTORCORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H7
BAS21_ND87Z 相关器件
型号 | 制造商 | 描述 | 价格 | 文档 |
BAS21_NL | FAIRCHILD | Rectifier Diode, 1 Element, 0.2A, 200V V(RRM), Silicon, LEAD FREE PACKAGE-3 | 获取价格 | |
BAS221 | NXP | General purpose diode | 获取价格 | |
BAS23 | DGNJDZ | Fast Switching Speed | 获取价格 | |
BAS23A | DGNJDZ | Fast Switching Speed | 获取价格 | |
BAS23C | DGNJDZ | Fast Switching Speed | 获取价格 | |
BAS23S | DGNJDZ | Fast Switching Speed | 获取价格 | |
BAS23W | KEC | USM PACKAGE | 获取价格 | |
BAS240 | NXP | Schottky barrier diode | 获取价格 | |
BAS240,115 | NXP | BAS240 | 获取价格 | |
BAS240T/R | NXP | DIODE 0.12 A, SILICON, SIGNAL DIODE, Signal Diode | 获取价格 |
BAS21_ND87Z 相关文章
- 2024-09-20
- 6
- 2024-09-20
- 9
- 2024-09-20
- 8
- 2024-09-20
- 6