BAV23SS62Z [FAIRCHILD]
Rectifier Diode, 2 Element, 0.2A, 250V V(RRM), Silicon, TO-236AB;型号: | BAV23SS62Z |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | Rectifier Diode, 2 Element, 0.2A, 250V V(RRM), Silicon, TO-236AB 光电二极管 |
文件: | 总4页 (文件大小:47K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BAV23S
Connection Diagram
3
3
3
L30
2
1
2
1
1
2
SOT-23
Small Signal Diode
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VRRM
IF(AV)
IFSM
Maximum Repetitive Reverse Voltage
250
200
V
Average Rectified Forward Current
mA
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 microsecond
Pulse Width = 100 microsecond
Storage Temperature Range
9.0
3.0
-55 to +150
A
A
°C
Tstg
TJ
Operating Junction Temperature
150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
Parameter
Value
Units
PD
Power Dissipation
Thermal Resistance, Junction to Ambient
350
357
mW
RθJA
°C/W
Electrical Characteristics TA = 25°C unless otherwise noted
Test Conditions
Min
Symbol
Parameter
Max
Units
VR
VF
Breakdown Voltage
V
250
I = 100
A
µ
R
Forward Voltage
IF = 100 mA
IF = 200 mA
VR = 250 V
VR = 250 V, TA = 150°C
IF = IR = 30 mA, IRR = 3.0 mA,
1.0
1.25
100
100
50
V
V
nA
µA
ns
IR
trr
Reverse Current
Reverse Recovery Time
R = 100
Ω
L
BAV23S, Rev.
C
2000 Fairchild Semiconductor Corporation
Small Signal Diode
(continued)
Typical Characteristics
150
Ta= 25°C
300
250
200
150
100
50
Ta= 25°C
140
130
120
110
0
10
20
30
50
70
100
Reverse Voltage, VR [v]
1
2
3
5
10
20 30
50
100
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
Reverse Current, IR [uA]
Figure 1. Reverse Voltage vs Reverse Current
BV - 1.0 to 100 uA
Figure 2. Reverse Current vs Reverse Voltage
IR - 10 to 100 V
485
725
Ta= 25°C
Ta= 25°C
450
700
650
600
550
500
450
400
350
300
250
225
1
2
3
5
10
20 30
50
100
0.1
0.2 0.3 0.5
1
2
3
5
10
Forward Current, IF [uA]
Forward Current, IF [mA]
Figure 3. Forward Voltage vs Forward Current
VF - 1.0 to 100 uA
Figure 4. Forward Voltage vs Forward Current
VF - 0.1 to 10 mA
1.5
Ta= 25°C
1.4
1.3
Ta= 25°C
1.2
1
1.2
1.1
1
0.8
0.6
10
20 30
50
100
200 300 500
15
14
0
2
4
6
8
10
12
Forward Current, IF [mA]
Reverse Voltage [V]
Figure 5. Forward Voltage vs Forward Current
VF - 10 - 800 mA
Figure 6. Total Capacitance
BAV23S, Rev. C
Small Signal Diode
(continued)
Typical Characteristics (continued)
4
Ta= 25°C
4 00
3.5
3
3 00
2.5
2
2 00
I
-
A V E
R A G
E
R E
C T
I
F
I
E
D
1.5
1
C U R R E
1 00
N T
-
m
A
10
20
30
40
50
60
0
Reverse Current [mA]
5 0
1 00
1 50
0
IRR (Reverse Recovery Current) = 1.0 mA - Rloop = 100 Ohms
Ambient Temperature, TA [ oC]
Figure 7. Reverse Recovery Time
vs Reverse Current
Figure 8. Average Rectified Current (IF(AV)
)
versus Ambient Temperature (T
A)
TRR - IR 10 mA vs 60 mA
500
400
300
DO-35 Pkg
SOT-23 Pkg
200
100
0
0
50
100
150
200
Average Temperature, IO (oC)
Figrue 9. Power Derating Curve
BAS16, Rev. C
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
â
SMART START™
STAR*POWER™
Stealth™
VCX™
FAST
ACEx™
Bottomless™
CoolFET™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
FASTr™
FRFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
CROSSVOLT™
DenseTrench™
DOME™
POP™
Power247™
PowerTrenchâ
QFET™
EcoSPARK™
E2CMOSTM
TinyLogic™
QS™
EnSignaTM
TruTranslation™
UHC™
QT Optoelectronics™
Quiet Series™
SILENTSWITCHERâ
FACT™
FACT Quiet Series™
UltraFETâ
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITYARISING OUT OF THE APPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICESORSYSTEMSWITHOUTTHEEXPRESSWRITTENAPPROVALOFFAIRCHILDSEMICONDUCTORCORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
相关型号:
BAV23ST/R
DIODE 0.225 A, 250 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3, Signal Diode
NXP
BAV300-GS08
DIODE 0.25 A, 60 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS, MICROMELF-2, Signal Diode
VISHAY
BAV300-GS18
DIODE 0.25 A, 60 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS, MICROMELF-2, Signal Diode
VISHAY
©2020 ICPDF网 联系我们和版权申明