BAW56 [FAIRCHILD]
High Conductance Ultra Fast Diode; 高电导率的超快速二极管
| 型号： | BAW56 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | High Conductance Ultra Fast Diode |
| 文件： | 总2页 (文件大小：37K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Discr ete P OWER & Sign a l
Tech n ologies
BAW56
CONNECTION DIAGRAMS
3
3
3
A1
2
1
2
1
2
SOT-23
1
High Conductance Ultra Fast Diode
Sourced from Process 1P. See BAV99 for characteristics.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
WIV
Working Inverse Voltage
Average Rectified Current
DC Forward Current
70
V
IO
200
600
700
mA
mA
mA
IF
Recurrent Peak Forward Current
if
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Storage Temperature Range
if(surge)
1.0
2.0
-55 to +150
A
A
°C
Tstg
TJ
Operating Junction Temperature
150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
BAW56
PD
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
350
2.8
357
mW
mW/°C
°C/W
Rθ
JA
1997 Fairchild Semiconductor Corporation
High Conductance Ultra Fast Diode
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max Units
BV
IR
Breakdown Voltage
IR = 5.0 µA
85
V
Reverse Current
VR = 70 V
2.5
30
50
715
855
1.0
µA
µA
µA
mV
mV
V
VR = 25 V, TA = 150°C
VR = 70 V, TA = 150°C
IF = 1.0 mA
IF = 10 mA
IF = 50 mA
VF
Forward Voltage
IF = 150 mA
VR = 0, f = 1.0 MHz
1.25
2.0
V
pF
CO
Diode Capacitance
TRR
Reverse Recovery Time
IF = IR = 10 mA, IRR = 1.0 mA,
RL = 100Ω
6.0
nS
VFM
Peak Forward Voltage
1.75
V
IF = 10 mA, tr = 20 nS
相关型号：
©2020 ICPDF网 联系我们和版权申明