BC182LBD26Z [FAIRCHILD]

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92;
BC182LBD26Z
型号: BC182LBD26Z
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

文件: 总4页 (文件大小:28K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BC182LB  
NPN General Purpose Amplifier  
This device is designed for general purpose amplifier application at  
collector currents to 100mA.  
Sourced from process 10.  
TO-92  
1. Emitter 2. Collector 3. Base  
1
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
50  
V
V
CEO  
60  
6
CBO  
EBO  
V
I
- Continuous  
100  
mA  
°C  
C
T
T
Storage Junction Temperature Range  
- 55 ~ 150  
J, STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max. Units  
Off Characteristics  
V
V
V
Collector-Emitter Breakdown Voltage  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
I
I
I
= 2mA, I = 0  
50  
60  
6
V
V
V
(BR)CEO  
(BR)CBO  
(BR)EBO  
CBO  
C
C
E
B
= 10µA, I = 0  
E
= 100µA, I = 0  
C
I
I
V
V
= 50V, V = 0  
15  
15  
nA  
nA  
CB  
EB  
BE  
Emitter-Base Leakage Current  
= 4V, I = 0  
E
EBO  
On Characteristics  
h
DC Current Gain  
V
V
= 5V, I = 10µA  
40  
80  
FE  
CE  
CE  
C
= 5V, I = 100mA  
C
V
(sat)  
Collector-Emitter Saturation Voltage  
I
I
= 10mA, I = 0.5mA  
0.25  
0.6  
V
CE  
C
C
B
= 100mA, I = 5mA  
B
V
V
(sat)  
(on)  
Base-Emitter Saturation Voltage  
Base-Emitter On Voltage  
I
= 100mA, I = 5mA  
1.2  
0.7  
V
V
BE  
C
B
V
= 5V, I = 2mA  
0.55  
150  
240  
BE  
CE  
C
Dynamic Characteristics  
f
Current Gain Bandwidth Product  
Output Capacitance  
V
V
V
V
= 5V, I = 10mA, f = 100MHz  
MHz  
pF  
T
CE  
CE  
CE  
CE  
C
C
= 10V, I = 0, f = 1MHz  
5
ob  
fe  
C
h
Small Signal Current Gain  
Noise Figure  
= 5V, I = 2mA, f = 1KHz  
500  
10  
C
NF  
= 5V, I = 0.2mA  
dB  
C
R
= 2K, f = 1KHz, BW = 200Hz  
S
©2002 Fairchild Semiconductor Corporation  
Rev. A, March 2002  
Thermal Characteristics T =25°C unless otherwise noted  
A
Symbol  
Parameter  
Max.  
Units  
P
Total Device Dissipation @T =25°C  
Derate above 25°C  
350  
2.8  
mW  
mW/°C  
D
A
R
R
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
357  
125  
mW/°C  
°C/W  
θJA  
θJC  
©2002 Fairchild Semiconductor Corporation  
Rev. A, March 2002  
Package Demensions  
TO-92  
+0.25  
–0.15  
4.58  
0.46 ±0.10  
+0.10  
–0.05  
1.27TYP  
1.27TYP  
0.38  
[1.27 ±0.20  
]
[1.27 ±0.20]  
3.60 ±0.20  
(R2.29)  
Dimensions in Millimeters  
©2002 Fairchild Semiconductor Corporation  
Rev. A, March 2002  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not  
intended to be an exhaustive list of all such trademarks.  
ACEx™  
Bottomless™  
CoolFET™  
FAST®  
FASTr™  
FRFET™  
OPTOLOGIC™  
OPTOPLANAR™  
PACMAN™  
SMART START™  
STAR*POWER™  
Stealth™  
VCX™  
CROSSVOLT™  
DenseTrench™  
DOME™  
EcoSPARK™  
E2CMOS™  
EnSigna™  
GlobalOptoisolator™  
GTO™  
HiSeC™  
ISOPLANAR™  
LittleFET™  
MicroFET™  
MicroPak™  
MICROWIRE™  
POP™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
SyncFET™  
TruTranslation™  
TinyLogic™  
Power247™  
PowerTrench®  
QFET™  
QS™  
QT Optoelectronics™  
Quiet Series™  
SLIENT SWITCHER®  
FACT™  
FACT Quiet Series™  
UHC™  
UltraFET®  
STAR*POWER is used under license  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY  
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;  
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR  
CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body,  
or (b) support or sustain life, or (c) whose failure to perform  
when properly used in accordance with instructions for use  
provided in the labeling, can be reasonably expected to  
result in significant injury to the user.  
2. A critical component is any component of a life support  
device or system whose failure to perform can be  
reasonably expected to cause the failure of the life support  
device or system, or to affect its safety or effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or In  
Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
©2002 Fairchild Semiconductor Corporation  
Rev. H4  

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