BC213L [FAIRCHILD]
PNP General Purpose Amplifier; PNP通用放大器![BC213L](http://pdffile.icpdf.com/pdf1/p00045/img/icpdf/BC213L_234857_icpdf.jpg)
型号: | BC213L |
厂家: | ![]() |
描述: | PNP General Purpose Amplifier |
文件: | 总4页 (文件大小:29K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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BC213L
PNP General Purpose Amplifier
•
This device is deisgned for use as general purpose amplifiers and
switches requiring collector currents to 300mA.
Sourced from process 68.
•
•
See PN200 for Characteristics.
TO-92
1. Emitter 2. Collector 3. Base
1
Absolute Maximum Ratings* T =25°C unless otherwise noted
C
Symbol
Parameter
Value
-30
Units
V
V
V
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (DC)-
V
V
CEO
-45
CBO
EBO
-5.0
V
I
- Continuous
-500
mA
°C
C
T , T
Operating and Storage Junction Temperature Range
- 55 ~ 150
J
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Test Condition
Min.
Max.
Units
Off Characteristics
V
V
V
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Cut-off Current
Emitter Cut-off Current
I
I
I
= -2mA, I = 0
-30
-45
-5.0
V
V
(BR)CEO
(BR)CBO
(BR)EBO
CBO
C
C
E
B
= -10µA, I = 0
E
= -10µA, I = 0
V
C
I
I
V
V
= -30V, I = 0
-15
-15
nA
nA
CB
EB
E
= -4.0V, I = 0
EBO
C
On Characteristics *
h
DC Current Gain
V
V
= -5V, I = -10µA
40
80
FE
CE
CE
C
= -5V, I = -2.0mA
400
C
V
(sat)
Collector-Emitter Saturation Voltage
I
I
= -10mA, I = -0.5mA
-0.25
-0.6
V
CE
C
C
B
= -100mA, I = -5.0mA
B
V
V
(sat)
(on)
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
I
= -100mA, I = -5.0mA
-1.1
V
V
BE
C
B
V
= -5.0V, I = -2.0mA
-0.6
200
-0.72
BE
CE
C
Small Signal Characteristics
f
Current gain Bandwidth Product
V
= -5.0V, I = -10mA
MHz
dB
T
CE
C
f = 100MHz
NF
Noise Figure
V
= -5.0V, I = -200µA
10
CE
C
RG = 2.0kΩ, f = 1.0KHz
h
Small Signal Current Gain
I
= -2.0mA, V = -5.0V
80
fe
C
CE
f = 1.0KHz
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
©2002 Fairchild Semiconductor Corporation
Rev. A, August 2002
Thermal Characteristics T =25°C unless otherwise noted
A
Symbol
Parameter
Max.
Units
P
Total Device Dissipation
Derate above 25°C
625
5.0
mW
mW/°C
D
R
R
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
83.3
200
°C/W
°C/W
θJC
θJA
©2002 Fairchild Semiconductor Corporation
Rev. A, August 2002
Package Dimensions
TO-92
+0.25
–0.15
4.58
0.46 ±0.10
+0.10
–0.05
1.27TYP
1.27TYP
0.38
[1.27 ±0.20
]
[1.27 ±0.20]
3.60 ±0.20
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A, August 2002
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
FACT™
ImpliedDisconnect™ PACMAN™
SPM™
ActiveArray™
Bottomless™
CoolFET™
CROSSVOLT™ FRFET™
DOME™
FACT Quiet series™ ISOPLANAR™
POP™
Stealth™
FAST®
LittleFET™
MicroFET™
MicroPak™
Power247™
PowerTrench®
QFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
FASTr™
GlobalOptoisolator™ MICROWIRE™
QS™
EcoSPARK™
E2CMOS™
EnSigna™
Across the board. Around the world.™
The Power Franchise™
GTO™
HiSeC™
I2C™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
QT Optoelectronics™ TinyLogic™
Quiet Series™
TruTranslation™
RapidConfigure™
RapidConnect™
UHC™
UltraFET®
SILENT SWITCHER® VCX™
SMART START™
Programmable Active Droop™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1
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