BC308 [FAIRCHILD]
PNP EPITAXIAL SILICON TRANSISTOR; PNP外延硅晶体管
| 型号： | BC308 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | PNP EPITAXIAL SILICON TRANSISTOR |
| 文件： | 总5页 (文件大小：44K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC307/308/309
Switching and Amplifier Applications
•
Low Noise: BC309
TO-92
1. Collector 2. Base 3. Emitter
1
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
a
Symbol
Parameter
Value
Units
V
V
V
Collector-Emitter Voltage
: BC307
: BC308/309
Collector-Emitter Voltage
CES
-50
-30
V
V
CEO
: BC307
: BC308/309
-45
-25
V
V
Emitter-Base Voltage
-5
-100
V
EBO
I
Collector Current (DC)
Collector Power Dissipation
Junction Temperature
Storage Temperature
mA
mW
°C
C
P
500
C
T
T
150
J
-55 ~ 150
°C
STG
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
Electrical Characteristics T =25°C unless otherwise noted
a
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BV
BV
BV
Collector-Emitter Breakdown Voltage
I = -2mA, I =0
CEO
CES
EBO
C
B
: BC307
: BC308/309
-45
-25
V
V
Collector-Emitter Breakdown Voltage
I = -10µA, V =0
C BE
: BC307
: BC308/309
-50
-30
V
V
Emitter-Base Breakdown Voltage
I = -10µA, I =0
-5
V
E
C
I
Collector Cut-off Current
: BC307
CES
V
V
= -45V, V =0
= -25V, V = 0
BE
-2
-2
-15
-15
nA
nA
CE
CE
BE
: BC308/309
h
DC Current Gain
V
= -5V, I = -2mA
120
8 0 0
-0.3
FE
CE
C
V
V
V
(sat)
Collector-Emitter Saturation Voltage
I = -10mA, I = -0.5mA
V
V
CE
BE
BE
C
B
I = -100mA, I = -5mA
-0.5
C
B
(sat)
(on)
Collector-Base Saturation Voltage
I = -10mA, I = -0.5mA
-0.7
-0.85
V
V
C
B
I = -100mA, I = -5mA
C
B
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
V
= -5V, I = -2mA
-0.55
-0.62
130
-0.7
6
V
MHz
pF
CE
CE
CB
EB
C
f
V
V
V
= -5V, I = -10mA, f=50MHz
C
T
C
C
= -10V, I =0, f=1MHz
E
ob
ib
Input Capacitance
= -0.5V, I =0, f=1MHz
12
pF
C
NF
Noise Figure
: BC307/308
: BC309
V
= -5V, I = -0.2mA,
10
4
4
dB
dB
dB
CE
C
R =2KΩ, f=1KHz
G
: BC309
V
= -5V, I = -0.2mA
2
CE
C
R =2KΩ, f=30~15KHz
G
h
Classification
FE
Classification
A
B
C
h
120 ~ 220
180 ~ 460
380 ~ 800
FE
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
Typical Characteristics
-50
1000
100
10
VCE = -5V
-45
IB = -400µA
IB = -350µA
-40
IB = -300µA
IB = -250µA
-35
-30
-25
-20
-15
-10
-5
IB = -200µA
IB = -150µA
IB = -100µA
IB = -50µA
1
-0.1
-1
-10
-100
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. DC current Gain
-10
-100
VCE = -5V
IC = -10 IB
VBE(sat)
-1
-10
-0.1
-1
VCE(sat)
-0.01
-0.1
-0.1
-0.0
-1
-10
-100
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
IC[mA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter Capacitance
1000
100
10
f=1MHz
VCE = -5V
IE = 0
10
1
-1
-10
-100
-1
-10
VCB[V], COLLECTOR-BASE VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 5. Collector Output Capacitance
Figure 6. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
Package Dimensions
TO-92
+0.25
–0.15
4.58
0.46 ±0.10
+0.10
–0.05
1.27TYP
1.27TYP
0.38
[1.27 ±0.20
]
[1.27 ±0.20]
3.60 ±0.20
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1
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