BC337-16L34Z [FAIRCHILD]
Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92;型号: | BC337-16L34Z |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 |
文件: | 总7页 (文件大小:311K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BC337-16
BC337-25
TO-92
E
B
C
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 500 mA. Sourced from
Process 12. See TN3019A for characteristics.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCES
VEBO
IC
Collector-Emitter Voltage
45
50
V
V
V
A
Collector-Base Voltage
Emitter-Base Voltage
5.0
Collector Current - Continuous
Operating and Storage Junction Temperature Range
1.0
-55 to +150
C
°
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
BC337-16 / BC337-25
PD
Total Device Dissipation
Derate above 25 C
625
5.0
mW
mW/ C
°
°
Thermal Resistance, Junction to Case
83.3
Rθ
C/W
°
JC
Thermal Resistance, Junction to Ambient
200
Rθ
C/W
°
JA
1997 Fairchild Semiconductor Corporation
33716-25, Rev B
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown
IC = 10 mA, IB = 0
45
V
Voltage
V(BR)CES
V(BR)EBO
ICBO
Collector-Base Breakdown Voltage
50
V
V
IC = 100 µA, IE = 0
Emitter-Base Breakdown Voltage
Collector Cutoff Current
5.0
IE = 100
µA, I = 0
C
100
5.0
nA
µA
VCB = 20 V, IE = 0, TA = +25 °C
VCB = 20 V, IE = 0, TA = +150
°C
IEBO
Emitter Cutoff Current
VEB = 5.0 V, IC = 0
10
µA
ON CHARACTERISTICS
hFE
DC Current Gain
VCE = 1.0 V, IC = 100 mA
337-16
100
160
40
250
400
337-25
CE = 1.0 V, IC = 500 mA
V
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
IC = 500 mA, IB = 50 mA
0.7
1.2
V
V
VCE(sat)
VBE(on)
VCE = 1.0 V, IC = 500 mA
TO-92 Tape and Reel Data
TO-92 Packaging
Configuration: Figure 1.0
TAPE and REEL OPTION
See Fig 2.0 for various
Reeling Styles
FSCINT Label sample
FAIRCHILD SEMICONDUCTOR CORPORATION
HTB:B
QTY:
10000
LOT:
CBVK741B019
NSID:
D/C1:
SPEC:
PN2222N
FSCINT
Label
SPEC REV:
QA REV:
D9842
B2
5 Reels per
Intermediate Box
(FSCINT)
Customized
Label
F63TNR Label sample
LOT: CBVK741B019
F63TNR
Label
QTY: 2000
SPEC:
FSID: PN222N
Customized
Label
D/C1: D9842
D/C2:
QTY1:
QTY2:
SPEC REV:
CPN:
N/F: F
(F63TNR)3
375mm x 267mm x 375mm
Intermediate Box
TO-92 TNR/AMMO PACKING INFROMATION
AMMO PACK OPTION
See Fig 3.0 for 2 Ammo
Pack Options
Packing
Style
A
Quantity
2,000
EOL code
D26Z
Reel
E
2,000
D27Z
Ammo
M
2,000
D74Z
P
2,000
D75Z
FSCINT
Label
Unit weight
Reel weight with components
Ammo weight with components = 1.02 kg
= 0.22 gm
= 1.04 kg
Max quantity per intermediate box = 10,000 units
5 Ammo boxes per
Intermediate Box
327mm x 158mm x 135mm
Immediate Box
Customized
Label
F63TNR
Label
Customized
Label
333mm x 231mm x 183mm
Intermediate Box
(TO-92) BULK PACKING INFORMATION
BULK OPTION
See Bulk Packing
Information table
EOL
CODE
LEADCLIP
DESCRIPTION
QUANTITY
2.0 K / BOX
DIMENSION
J18Z
TO-18 OPTION STD
TO-5 OPTION STD
NO LEAD CLIP
Anti-static
Bubble Sheets
J05Z
NO LEAD CLIP
NO LEADCLIP
1.5 K / BOX
2.0 K / BOX
FSCINT Label
NO EOL
CODE
TO-92 STANDARD
STRAIGHT FOR: PKG 92,
94 (NON PROELECTRON
SERIES), 96
L34Z
TO-92 STANDARD
STRAIGHT FOR: PKG 94
NO LEADCLIP
2.0 K / BOX
(PROELECTRON SERIES
2000 units per
EO70 box for
std option
114mm x 102mm x 51mm
Immediate Box
BCXXX, BFXXX, BSRXXX),
97, 98
5 EO70 boxes per
intermediate Box
530mm x 130mm x 83mm
Intermediate box
Customized
Label
FSCINT Label
10,000 units maximum
per intermediate box
for std option
March 2001, Rev. B1
©2001 Fairchild Semiconductor Corporation
TO-92 Tape and Reel Data, continued
TO-92 Reeling Style
Configuration: Figure 2.0
Machine Option “A” (H)
Machine Option “E” (J)
Style “A”, D26Z, D70Z (s/h)
Style “E”, D27Z, D71Z (s/h)
TO-92 Radial Ammo Packaging
Configuration: Figure 3.0
FIRST WIRE OFF IS COLLECTOR
ADHESIVE TAPE IS ON THE TOP SIDE
FLAT OF TRANSISTOR IS ON TOP
FIRST WIRE OFF IS EMITTER
ADHESIVE TAPE IS ON THE TOP SIDE
FLAT OF TRANSISTOR IS ON BOTTOM
ORDER STYLE
D74Z (M)
ORDER STYLE
D75Z (P)
FIRST WIRE OFF IS COLLECTOR (ON PKG. 92)
ADHESIVE TAPE IS ON BOTTOM SIDE
FLAT OF TRANSISTOR IS ON TOP
FIRST WIRE OFF IS EMITTER (ON PKG. 92)
ADHESIVE TAPE IS ON BOTTOM SIDE
FLAT OF TRANSISTOR IS ON BOTTOM
September 1999, Rev. B
TO-92 Tape and Reel Data, continued
TO-92 Tape and Reel Taping
Dimension Configuration: Figure 4.0
Hd
P
Pd
b
Ha
W1
d
S
L
H1
HO
L1
WO
t
W2
W
t1
P1 F1
P2
DO
ITEM DESCRIPTION
SYMBOL
DIMENSION
PO
b
0.098 (max)
Base of Package to Lead Bend
Component Height
Ha
HO
H1
Pd
Hd
P
0.928 (+/- 0.025)
0.630 (+/- 0.020)
0.748 (+/- 0.020)
0.040 (max)
User Direction of Feed
Lead Clinch Height
Component Base Height
Component Alignment ( side/side )
Component Alignment ( front/back )
Component Pitch
0.031 (max)
0.500 (+/- 0.020)
0.500 (+/- 0.008)
0.150 (+0.009, -0.010)
0.247 (+/- 0.007)
0.104 (+/- 0 .010)
0.018 (+0.002, -0.003)
0.429 (max)
PO
P1
P2
F1/F2
d
Feed Hole Pitch
Hole Center to First Lead
Hole Center to Component Center
Lead Spread
Lead Thickness
L
Cut Lead Length
L1
t
0.209 (+0.051, -0.052)
0.032 (+/- 0.006)
0.021 (+/- 0.006)
0.708 (+0.020, -0.019)
0.236 (+/- 0.012)
0.035 (max)
Taped Lead Length
Taped Lead Thickness
Carrier Tape Thickness
Carrier Tape Width
t1
W
TO-92 Reel
Configuration: Figure 5.0
Hold - down Tape Width
Hold - down Tape position
Feed Hole Position
WO
W1
W2
DO
S
0.360 (+/- 0.025)
0.157 (+0.008, -0.007)
0.004 (max)
Sprocket Hole Diameter
Lead Spring Out
Note : All dimensions are in inches.
ELECTROSTATIC
SENSITIVE DEVICES
D4
D1
ITEM DESCRIPTION
SYSMBOL MINIMUM
MAXIMUM
D2
Reel Diameter
D1
D2
D2
D3
D4
W1
W2
W3
13.975
1.160
0.650
3.100
2.700
0.370
1.630
14.025
1.200
0.700
3.300
3.100
0.570
1.690
2.090
F63TNR Label
Arbor Hole Diameter (Standard)
(Small Hole)
Customized Label
Core Diameter
Hub Recess Inner Diameter
Hub Recess Depth
Flange to Flange Inner Width
Hub to Hub Center Width
W1
W3
W2
Note: All dimensions are inches
D3
July 1999, Rev. A
TO-92 Package Dimensions
TO-92 (FS PKG Code 92, 94, 96)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.1977
January 2000, Rev. B
©2000 Fairchild Semiconductor International
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G
相关型号:
BC337-16{AMMOPAK}
Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
DIODES
BC337-25
NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage)
INFINEON
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