BC636TAR [FAIRCHILD]
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| 型号： | BC636TAR |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 暂无描述 晶体 晶体管 |
| 文件： | 总5页 (文件大小：420K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC636
PNP Epitaxial Silicon Transistor
Switching and Amplifier Applications
•
Complement to BC635
TO-92
1
1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings
T
= 25°C unless otherwise noted
a
Symbol
Parameter
Value
-45
Units
V
V
V
V
V
Collector-Emitter Voltage at R =1KΩ
CER
CES
CEO
EBO
BE
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
-45
V
-45
V
-5
V
I
I
I
-1
A
C
Peak Collector Current
Base Current
-1.5
-100
1
A
CP
B
mA
W
P
Collector Power Dissipation
Junction Temperature
Storage Temperature
C
T
T
150
-65 ~ 150
°C
°C
J
STG
Electrical Characteristics
T = 25°C unless otherwise noted
a
Symbol
Parameter
Test Condition
Min.
-45
Typ.
Max.
Units
V
BV
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
I = -10mA, I =0
CEO
CBO
EBO
C
B
I
I
V
= -30V, I =0
-0.1
-0.1
µA
µA
CB
EB
E
V
= -5V, I =0
C
h
h
h
DC Current Gain
V
V
V
= -2V, I = -5mA
25
40
25
FE1
FE2
FE3
CE
CE
CE
C
= -2V, I = -150mA
250
C
= -2V, I = -500mA
C
V
V
(sat)
(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
I = -500mA, I = -50mA
-0.5
-1
V
V
CE
BE
C
B
V
= -2V, I = -500mA
C
CE
f
Current Gain Bandwidth Product
V
= -5V, I = -10mA,
100
MHz
T
CE
C
f=50MHz
©2005 Fairchild Semiconductor Corporation
BC636 Rev. C2
1
www.fairchildsemi.com
Package Marking and Ordering Information
Device Marking
BC636
Device
BC636BU
BC636TA
BC636TAR
BC636TF
BC636TFR
Package
TO-92
Reel Size
Tape Width
Quantity
10,000
2,000
--
--
--
--
--
--
--
--
--
--
BC636
TO-92
BC636
TO-92
2,000
BC636
TO-92
2,000
BC636
TO-92
2,000
2
www.fairchildsemi.com
BC636 Rev. C2
Typical Performance Characteristics
Figure 1. Static Characteristic
Figure 2. DC Current Gain
-500
1000
IB = - 1.8 mA
VCE = - 2V
IB = - 1.6 mA
-400
IB = - 1.4 mA
IB = - 1.2 mA
-300
-200
-100
-0
IB = - 1.0 mA
IB = - 0.8 mA
IB = - 0.6 mA
100
IB = - 0.4 mA
IB = - 0.2 mA
10
-0
-10
-20
-30
-40
-50
-1
-10
-100
-1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
-10
-1000
IC = 10 IB
VCE = - 2V
VBE(sat)
-1
-0.1
-100
-10
-1
VCE(sat)
-0.01
-1
-10
-100
-1000
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
VBE[V], BASE-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 5. Collector Output Capacitance
100
f=1MHz
10
1
-1
-10
-100
VCB[V], COLLECTOR-BASE VOLTAGE
3
www.fairchildsemi.com
BC636 Rev. C2
Mechanical Dimensions
TO-92
+0.25
–0.15
4.58
0.46 0.10
+0.10
–0.05
1.27TYP
[1.27 0.20
1.27TYP
[1.27 0.20
0.38
]
]
3.60 0.20
(R2.29)
Dimensions in Millimeters
4
www.fairchildsemi.com
BC636 Rev. C2
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to
be an exhaustive list of all such trademarks.
ACEx™
FAST®
ISOPLANAR™
LittleFET™
PowerSaver™
PowerTrench®
QFET®
SuperSOT™-8
SyncFET™
TinyLogic®
TINYOPTO™
TruTranslation™
UHC™
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
FASTr™
FPS™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
FRFET™
GlobalOptoisolator™
GTO™
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
µSerDes™
CROSSVOLT™
DOME™
HiSeC™
UltraFET®
UniFET™
EcoSPARK™
E2CMOS™
EnSigna™
I2C™
MSXPro™
i-Lo™
OCX™
VCX™
Wire™
ImpliedDisconnect™
IntelliMAX™
OCXPro™
SILENT SWITCHER®
SMART START™
SPM™
FACT™
OPTOLOGIC®
OPTOPLANAR™
PACMAN™
POP™
FACT Quiet Series™
Stealth™
Across the board. Around the world.™
SuperFET™
The Power Franchise®
Power247™
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SuperSOT™-3
SuperSOT™-6
Programmable Active Droop™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Definition
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I16
5
www.fairchildsemi.com
BC636 Rev. C2
相关型号：
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Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
MOTOROLA
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