BC639_NL [FAIRCHILD]

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BC639_NL
型号: BC639_NL
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
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晶体 晶体管
文件: 总4页 (文件大小:57K)
中文:  中文翻译
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BC635/637/639  
Switching and Amplifier Applications  
Complement to BC636/638/640  
TO-92  
1. Emitter 2. Collector 3. Base  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
Units  
V
V
V
V
Collector-Emitter Voltage at R =1KΩ  
CER  
BE  
: BC635  
: BC637  
: BC639  
45  
60  
100  
V
V
V
Collector-Emitter Voltage  
: BC635  
CES  
CEO  
EBO  
45  
60  
100  
V
V
V
: BC637  
: BC639  
Collector-Emitter Voltage  
: BC635  
45  
60  
80  
V
V
V
: BC637  
: BC639  
Emitter-Base Voltage  
Collector Current  
5
V
A
I
I
I
1
1.5  
C
Peak Collector Current  
Base Current  
A
CP  
B
100  
mA  
W
°C  
°C  
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
1
C
T
T
150  
J
-65 ~ 150  
STG  
PW=5ms, Duty Cycle=10%  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max.  
Units  
BV  
Collector-Emitter Breakdown Voltage  
I =10mA, I =0  
CEO  
C
B
: BC635  
: BC637  
: BC639  
45  
60  
80  
V
V
V
I
I
Collector Cut-off Current  
Emitter Cut-off Current  
V
=30V, I =0  
0.1  
0.1  
µA  
µA  
CBO  
CB  
E
V
=5V, I =0  
C
EBO  
EB  
h
h
DC Current Gain  
: All  
V
V
=2V, I =5mA  
25  
40  
40  
25  
FE1  
FE2  
CE  
CE  
C
: BC635  
: BC637/BC639  
: All  
=2V, I =150mA  
250  
160  
C
h
V
=2V, I =500mA  
CE C  
FE3  
V
V
(sat)  
(on)  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
I =500mA, I =50mA  
0.5  
1
V
V
CE  
BE  
C
B
V
=2V, I =500mA  
C
CE  
f
Current Gain Bandwidth Product  
V
=5V, I =10mA,  
100  
MHz  
T
CE  
C
f=50MHz  
©2002 Fairchild Semiconductor Corporation  
Rev. B2, December 2002  
Typical Characteristics  
200  
1000  
100  
10  
IB = 1.8 mA  
VCE = 2V  
IB = 1.6 mA  
160  
120  
80  
IB = 1.4 mA  
IB = 1.2 mA  
IB = 1.0 mA  
IB = 0.8 mA  
IB = 0.6 mA  
40  
IB = 0.4 mA  
IB = 0.2 mA  
0
0
10  
20  
30  
40  
50  
1
10  
100  
1000  
IC[mA], COLLECTOR CURRENT  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
Figure 1. Static Characteristic  
Figure 2. DC current Gain  
10  
1000  
100  
10  
IC = 10 IB  
VCE = 2V  
VBE(sat)  
1
0.1  
VCE(sat)  
0.01  
1
0.0  
1
10  
100  
1000  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
VBE[V], BASE-EMITTER VOLTAGE  
IC[mA], COLLECTOR CURRENT  
Figure 3. Base-Emitter Saturation Voltage  
Collector-Emitter Saturation Voltage  
Figure 4. Base-Emitter On Voltage  
100  
f=1MHz  
10  
1
1
10  
100  
VCB[V], COLLECTOR-BASE VOLTAGE  
Figure 5. Collector Output Capacitance  
©2002 Fairchild Semiconductor Corporation  
Rev. B2, December 2002  
Package Dimensions  
TO-92  
Dimensions in Millimeters  
©2002 Fairchild Semiconductor Corporation  
Rev. B2, December 2002  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not  
intended to be an exhaustive list of all such trademarks.  
ACEx™  
FACT™  
ImpliedDisconnect™ PACMAN™  
SPM™  
ActiveArray™  
Bottomless™  
CoolFET™  
CROSSVOLT™ FRFET™  
DOME™  
FACT Quiet series™ ISOPLANAR™  
POP™  
Stealth™  
FAST®  
LittleFET™  
MicroFET™  
MicroPak™  
Power247™  
PowerTrench®  
QFET™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
SyncFET™  
FASTr™  
GlobalOptoisolator™ MICROWIRE™  
QS™  
EcoSPARK™  
E2CMOS™  
EnSigna™  
Across the board. Around the world.™  
The Power Franchise™  
GTO™  
HiSeC™  
I2C™  
MSX™  
MSXPro™  
OCX™  
OCXPro™  
OPTOLOGIC®  
OPTOPLANAR™  
QT Optoelectronics™ TinyLogic™  
Quiet Series™  
TruTranslation™  
RapidConfigure™  
RapidConnect™  
UHC™  
UltraFET®  
SILENT SWITCHER® VCX™  
SMART START™  
Programmable Active Droop™  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY  
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;  
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR  
CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body,  
or (b) support or sustain life, or (c) whose failure to perform  
when properly used in accordance with instructions for use  
provided in the labeling, can be reasonably expected to  
result in significant injury to the user.  
2. A critical component is any component of a life support  
device or system whose failure to perform can be  
reasonably expected to cause the failure of the life support  
device or system, or to affect its safety or effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or In  
Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
©2002 Fairchild Semiconductor Corporation  
Rev. I1  

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