BC850CMTF_11 [FAIRCHILD]
NPN Epitaxial Silicon Transistor; NPN外延硅晶体管
| 型号： | BC850CMTF_11 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | NPN Epitaxial Silicon Transistor |
| 文件： | 总5页 (文件大小：142K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
April 2011
BC846 - BC850
NPN Epitaxial Silicon Transistor
Features
3
• Switching and Amplifier Applications
• Suitable for automatic insertion in thick and thin-film circuits
• Low Noise: BC849, BC850
2
• Complement to BC856 ... BC860
SOT-23
1
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings* Ta = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
: BC846
80
50
30
V
V
V
: BC847/850
: BC848/849
Collector-Emitter Voltage : BC846
: BC847/850
VCEO
65
45
30
V
V
V
: BC848/849
VEBO
Emitter-Base Voltage
: BC846/847
: BC848/849/850
6
5
V
V
IC
PC
Collector Current (DC)
100
310
mA
mW
°C
Collector Power Dissipation
Junction Temperature
Storage Temperature
TJ
150
TSTG
-65 to 150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics* Ta = 25°C unless otherwise noted
Symbol
ICBO
Parameter
Collector Cut-off Current
DC Current Gain
Test Condition
VCB=30V, IE=0
VCE=5V, IC=2mA
Min.
Typ. Max. Units
15
nA
hFE
110
800
VCE (sat) Collector-Emitter Saturation Voltage IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
90
200
250
600
mV
mV
VBE (sat) Collector-Base Saturation Voltage
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
700
900
mV
mV
VBE (on) Base-Emitter On Voltage
VCE=5V, IC=2mA
VCE=5V, IC=10mA
580
660
700
720
mV
mV
fT
Current Gain Bandwidth Product
Output Capacitance
VCE=5V, IC=10mA, f=100MHz
VCB=10V, IE=0, f=1MHz
VEB=0.5V, IC=0, f=1MHz
300
3.5
9
MHz
pF
Cob
Cib
NF
6
Input Capacitance
pF
Noise Figure
: BC846/847/848
: BC849/850
VCE= 5V, IC= 200μA
RG=2KΩ, f=1KHz
2
1.2
10
4
dB
dB
: BC849
: BC850
VCE= 5V, IC= 200μA
RG=2KΩ, f=30~15000Hz
1.4
1.4
4
3
dB
dB
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
© 2011 Fairchild Semiconductor Corporation
BC846 - BC850 Rev. B1
www.fairchildsemi.com
1
hFE Classification
Classification
hFE
A
B
C
110 ~ 220
200 ~ 450
420 ~ 800
Ordering Information
Device(note1) Device Marking Package Packing Method Qty(pcs)
Pin Difinitions
BC846AMTF
BC846BMTF
BC846CMTF
BC847AMTF
BC847BMTF
BC847CMTF
BC848AMTF
BC848BMTF
BC848CMTF
BC849AMTF
BC849BMTF
BC849CMTF
BC850AMTF
BC850BMTF
BC850CMTF
8AA
8AB
8AC
8BA
8BB
8BC
8CA
8CB
8CC
8DA
8DB
8DC
8EA
8EB
8EC
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
3000
3000
3000
3000
3000
3000
3000
3000
3000
3000
3000
3000
3000
3000
3000
1.Base 2.Emitter 3.Collector
1.Base 2.Emitter 3.Collector
1.Base 2.Emitter 3.Collector
1.Base 2.Emitter 3.Collector
1.Base 2.Emitter 3.Collector
1.Base 2.Emitter 3.Collector
1.Base 2.Emitter 3.Collector
1.Base 2.Emitter 3.Collector
1.Base 2.Emitter 3.Collector
1.Base 2.Emitter 3.Collector
1.Base 2.Emitter 3.Collector
1.Base 2.Emitter 3.Collector
1.Base 2.Emitter 3.Collector
1.Base 2.Emitter 3.Collector
1.Base 2.Emitter 3.Collector
Note1 : Affix “-A,-B,-C” means hFE classification.
Affix “-M” means SOT-23 package.
Affix “-TF” means the tape & reel type packing.
© 2011 Fairchild Semiconductor Corporation
BC846 - BC850 Rev. B1
www.fairchildsemi.com
2
Typical Performance Characteristics
10000
1000
100
100
VCE = 5V
IB = 400μA
IB = 350μA
80
IB = 300μA
IB = 250μA
60
IB = 200μA
IB = 150μA
40
IB = 100μA
20
IB = 50μA
10
0
1
10
100
1000
0
4
8
12
16
20
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. DC current Gain
100
10
1
10000
IC = 10 IB
VCE = 2V
VBE(sat)
1000
100
10
VCE(sat)
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1
10
100
1000
VBE[V], BASE-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
100
1000
f=1MHz
VCE=5V
10
100
10
1
1
0.1
1
10
100
1000
0.1
1
10
100
IC[mA], COLLECTOR CURRENT
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
Figure 6. Current Gain Bandwidth Product
© 2011 Fairchild Semiconductor Corporation
BC846 - BC850 Rev. B1
www.fairchildsemi.com
3
Physical Dimensions
SOT-23
Dimensions in Millimeters
www.fairchildsemi.com
© 2011 Fairchild Semiconductor Corporation
BC846 - BC850 Rev. B1
4
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Formative /
In Design
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Advance Information
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Preliminary
No Identification Needed
Obsolete
First Production
Full Production
Not In Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I53
© Fairchild Semiconductor Corporation
www.fairchildsemi.com
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