BCW65C [FAIRCHILD]
NPN General Purpose Amplifier; NPN通用放大器
| 型号： | BCW65C |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | NPN General Purpose Amplifier |
| 文件： | 总4页 (文件大小：39K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Discr ete P OWER & Sign a l
Tech n ologies
BCW65C
C
E
SOT-23
Mark: ED
B
NPN General Purpose Amplifier
This device is designed for general purpose amplifier applications
at collector currents to 500 mA. Sourced from Process 19.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
32
60
V
V
V
A
Collector-Base Voltage
Emitter-Base Voltage
5.0
Collector Current - Continuous
Operating and Storage Junction Temperature Range
1.0
-55 to +150
C
°
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
*BCW65C
PD
Total Device Dissipation
Derate above 25 C
350
2.8
mW
mW/ C
°
°
Thermal Resistance, Junction to Ambient
357
Rθ
C/W
°
JA
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
ã 1997 Fairchild Semiconductor Corporation
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICES
Collector-Emitter Breakdown Voltage
IC = 10 mA, IB = 0
I = 10 A, I = 0
32
60
V
V
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
µ
C
E
5.0
V
I = 10 A, I = 0
µ
E
C
VCB = 32 V, IE = 0
20
20
20
nA
A
µ
nA
VCB = 32 V, I = 0, T = 150 C
°
E
A
IEBO
Emitter-Cutoff Current
VEB = 4.0 V, IC = 0
ON CHARACTERISTICS
hFE
DC Current Gain
80
180
250
50
I = 100 A, VCE = 10 V
µ
C
IC = 10 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
IC = 500 mA, VCE = 2.0 V
IC = 100 mA, IB = 10 mA
IC = 500 mA, B = 50 mA
IC = 500 mA, IB = 50 mA
630
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
0.3
0.7
2.0
V
V
VCE(sat)
VBE(sat)
SMALL SIGNAL CHARACTERISTICS
Current Gain - Bandwidth Product
IC = 20 mA, VCE = 10 V,
f = 100 MHz
100
MHz
fT
Output Capacitance
Input Capacitance
Noise Figure
VCB = 10 V, IE = 0, f = 1.0 MHz
12
80
10
pF
pF
dB
Cobo
Cibo
NF
VEB = 0.5 V, IC = 0, f = 1.0 MHz
IC = 0.2 mA, VCE = 5.0,
RS = 1.0 k , f = 1.0 kHz,
Ω
BW = 200 Hz
Typical Characteristics
Typical Pulsed Current Gain
Collector-Emitter Saturation
Voltage vs Collector Current
vs Collector Current
500
0.4
0.3
0.2
0.1
V
= 5V
CE
β = 10
400
300
200
100
0
125 °C
25 °C
125 °C
25 °C
- 40 °C
- 40 °C
0.1
0.3
1
3
10
30
100 300
1
10
100
500
IC - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
NPN General Purpose Amplifier
(continued)
Typical Characteristics
Base-Emitter ON Voltage vs
Collector Current
Base-Emitter Saturation
Voltage vs Collector Current
1
0.8
0.6
0.4
0.2
β = 10
V
= 5V
1
CE
- 40 °C
- 40 °C
0.8
25 °C
25 °C
0.6
125 °C
125 °C
0.4
0.1
1
10
25
1
10
100
500
I C - COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (mA)
Collector-Cutoff Current
vs Ambient Temperature
Emitter Transition and Output
Capacitance vs Reverse Bias Voltage
500
100
20
16
12
8
f = 1 MHz
V
= 40V
CB
10
1
C
te
0.1
C
ob
4
25
50
75
100
125
150
0.1
1
10
100
°
TA - AMBIENT TEMPERATURE ( C)
REVERSE BIAS VOLTAGE (V)
Power Dissipation vs
Ambient Temperature
350
300
250
200
150
100
50
SOT-23
0
0
25
50
75
100
125
150
TEMPERATURE (oC)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
CoolFET™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench™
QS™
CROSSVOLT™
E2CMOSTM
FACT™
FACT Quiet Series™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
TinyLogic™
FAST®
FASTr™
GTO™
HiSeC™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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