BCX71K_S00Z [FAIRCHILD]
Transistor;
| 型号： | BCX71K_S00Z |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Transistor |
| 文件： | 总5页 (文件大小：65K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCX71K
C
E
SOT-23
Mark: BK
B
PNP General Purpose Amplifier
This device is designed for applications requiring extremely
high current gain at collector currents to 300 mA. Sourced
from Process 68.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCES
VEBO
IC
Collector-Emitter Voltage
45
45
V
V
3
Collector-Base Voltage
Emitter-Base Voltage
5.0
V
Collector Current - Continuous
Operating and Storage Junction Temperature Range
500
mA
-55 to +150
C
°
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
*BCX71K
PD
Total Device Dissipation
Derate above 25 C
350
2.8
mW
mW/ C
°
°
Thermal Resistance, Junction to Ambient
357
Rθ
C/W
°
JA
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
1997 Fairchild Semiconductor Corporation
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)EBO
ICES
Collector-Emitter Breakdown Voltage
IC = 1.0 mA, IB = 0
I = 10 A, I = 0
45
V
V
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
5.0
µ
E
C
VCB = 45 V, IE = 0
VCB = 45 V, I = 0, T = 100 C
20
20
nA
A
µ
°
E
A
ON CHARACTERISTICS
hFE
DC Current Gain
100
380
110
0.06
0.12
0.6
I = 10 A, VCE = 5.0 V
µ
C
630
IC = 2.0 mA, VCE = 5.0 V
IC = 50 mA, VCE = 1.0 V
IC = 10 mA, IB = 0.25 mA
IC = 50 mA, IB = 1.25 mA
IC = 10 mA, IB = 0.25 mA
IC = 50 mA, IB = 1.25 mA
IC = 2.0 mA, VCE = 5.0 V
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
0.25
0.55
0.85
1.05
0.75
V
VCE(sat)
VBE(sat)
VBE(on)
V
V
V
V
0.68
0.6
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
VCE = 10 V, IC = 0, f = 1.0 MHz
IC = 0.2 mA, VCE = 5.0 V,
6.0
6.0
pF
dB
Cobo
NF
Noise Figure
RS = 2.0 k , f = 1.0 kHz,
Ω
BW = 200 Hz
SWITCHING CHARACTERISTICS
Turn-On Time
IC = 10 mA, IB1 = 1.0 mA
IB2 = 1.0 mA, VBB = 3.6 V,
150
800
ns
ns
t(on)
t(off)
Turn-Off Time
R1 = R2 = 5.0 k , R = 990
Ω
Ω
L
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
Typical Characteristics
Collector-Emitter Saturation
Voltage vs Collector Current
Typical Pulsed Current Gain
vs Collector Current
0.3
0.25
0.2
500
VCE = 5V
β
= 10
125 °C
400
300
0.15
0.1
25 °C
200
25 °C
- 40 °C
100
0.05
0
125 °C
- 40 °C
100
0
0.1
1
10
300
0.01
0.1
1
10
100
IC - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
PNP General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Base-Emitter Saturation
Voltage vs Collector Current
Base Emitter ON Voltage vs
Collector Current
1.2
1
0.8
0.6
0.4
0.2
0
β = 10
1
- 40°C
25 °C
- 40 °C
0.8
125 °C
25 °C
125 °C
0.6
0.4
0.2
0
V
= 5V
CE
0.1
1
10
100
300
0.1
1
10
100 200
I C - COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (mA)
Collector-Emitter Breakdown
Voltage with Resistance
Between Emitter-Base
Collector-Cutoff Current
vs Ambient Temperature
100
10
95
90
85
80
75
70
V
= 50V
CB
3
1
0.1
0.01
25
50
75
100
125
0.1
1
10
100
1000
TA - AMBIE NT TEMP ERATURE ( C)
°
RESISTANCE (k )
Ω
Collector Saturation Region
Input and Output Capacitance
vs Reverse Voltage
4
3
2
1
0
100
Ta = 25°C
f = 1.0 MHz
Ic =
100 uA
300 mA
50 mA
10
Cib
Cob
100
300
700
2000 4000
0.1
1
10
100
I
- BASE CURRENT (uA)
V
- COLLECTOR VOLTAGE (V)
B
CE
PNP General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Gain Bandwidth Product
vs Collector Current
Power Dissipation vs
Ambient Temperature
40
350
300
250
200
150
100
50
V
= 5V
ce
30
20
10
0
SOT-23
0
1
10
20
50
100 150
0
25
50
75
100
125
150
TEMPERATURE (oC)
IC - COLLECTOR CURRENT (mA)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
PowerTrench
QFET™
QS™
SyncFET™
TinyLogic™
UHC™
ACEx™
FASTr™
GlobalOptoisolator™
GTO™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
QT Optoelectronics™
VCX™
HiSeC™
Quiet Series™
SILENT SWITCHER
SMART START™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G
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