首页 > BD17710STU

BD17710STU

更新时间：2024-09-18 19:14:08

品牌：FAIRCHILD

描述：Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin

PDF下载

中文翻译

PCB计价

概述
规格参数
数据手册

如果您发现信息不准确，欢迎纠错

BD17710STU 概述

Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin 功率双极晶体管

BD17710STU 规格参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	FLANGE MOUNT, R-PSFM-T3	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.77
最大集电极电流 (IC)：	3 A	集电极-发射极最大电压：	60 V
配置：	SINGLE	最小直流电流增益 (hFE)：	63
JEDEC-95代码：	TO-126	JESD-30 代码：	R-PSFM-T3
元件数量：	1	端子数量：	3
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
极性/信道类型：	NPN	最大功率耗散 (Abs)：	30 W
认证状态：	Not Qualified	子类别：	Other Transistors
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	3 MHz
Base Number Matches：	1

BD17710STU 数据手册

通过下载BD17710STU数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

PDF下载

BD175/177/179

Medium Power Linear and Switching

Applications

•

Complement to BD 176/178/180 respectively

TO-126

1. Emitter 2.Collector 3.Base

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

Units

*Collector-Base Voltage

Collector-Emitter Voltage

: BD175

: BD177

: BD179

CBO

: BD175

: BD177

: BD179

CEO

Emitter-Base Voltage

Collector Current (DC)

*Collector Current (Pulse)

EBO

Collector Dissipation (T =25°C)

°C

Junction Temperature

Storage Temperature

150

- 65 ~ 150

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

Min.

Typ.

Max. Units

(sus)

* Collector-Emitter Sustaining Voltage

CEO

: BD175

: BD177

: BD179

= 100mA, I = 0

Collector Cut-off Current

: BD175

: BD177

: BD179

= 45V, I = 0

100

µA

CBO

= 60V, I = 0

= 80V, I = 0

Emitter Cut-off Current

* DC Current Gain

= 5V, I = 0

EBO

= 2V, I = 150mA

250

FE1

FE2

= 2V, I = 1A

(sat)

* Collector-Emitter Saturation Voltage

* Base-Emitter On Voltage

= 1A, I = 0.1A

0.8

1.3

(on)

= 2V, I = 1A

Current Gain Bandwidth Product

= 10V, I = 250mA

MHz

* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed

Classificntion

Classification

100 ~ 250

40 ~ 100

63 ~ 160

FE1

* Classification 16: Only BD175

Rev. A, February 2000

Typical Characteristics

1000

100

V_CE= 2V

I_C= 10 I_B

V_BE(sat)

V_CE(sat)

0.1

0.01

0.1

0.01

0.1

I_C[A], COLLECTOR CURRENT

Figure 1. DC current Gain

Figure 2. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

I_CMAX. (Pulsed)

10µs

I_CMAX. (Continuous)

0.1

100

125

150

175

100

T_C[^oC], CASE TEMPERATURE

V_CE[V], COLLECTOR-EMITTER VOLTAGE

Figure 3. Safe Operating Area

Figure 4. Power Derating

Rev. A, February 2000

Package Demensions

TO-126

8.00 ±0.30

3.25 ±0.20

ø3.20 ±0.10

(1.00)

(0.50)

0.75 ±0.10

1.75 ±0.20

1.60 ±0.10

0.75 ±0.10

+0.10

–0.05

0.50

2.28TYP

[2.28±0.20]

2.28TYP

[2.28±0.20]

Dimensions in Millimeters

Rev. A, February 2000

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

ACEx™

HiSeC™

SuperSOT™-8

SyncFET™

TinyLogic™

UHC™

Bottomless™

CoolFET™

CROSSVOLT™

E²CMOS™

FACT™

ISOPLANAR™

MICROWIRE™

POP™

PowerTrench^®

QFET™

VCX™

FACT Quiet Series™

QS™

FAST^®

Quiet Series™

SuperSOT™-3

SuperSOT™-6

FASTr™

GTO™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

INTERNATIONAL.

As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or In

Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. E

SEARCH | Parametric | Cross Reference

Fairchild Semiconductor

space

Product Folders and

Applica

spa

Home >> Find products >>

find products

spa

BD177

BD17710STU 相关器件

型号	制造商	描述	价格	文档
BD17716	FAIRCHILD	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin	获取价格
BD1776	FAIRCHILD	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin,	获取价格
BD1776STU	FAIRCHILD	Transistor	获取价格
BD177LEADFREE	CENTRAL	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin,	获取价格
BD178	FAIRCHILD	Medium Power Linear and Switching Applications	获取价格
BD178	ISC	Silicon PNP Power Transistors	获取价格
BD178	CDIL	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin	获取价格
BD178	SAMSUNG	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin	获取价格
BD178-10	FAIRCHILD	3 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-126	获取价格
BD178-10	SAMSUNG	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin	获取价格