概述
数据手册
替代型号BD442 概述
Medium Power Linear and Switching Applications 中功率线性和开关应用
BD442 数据手册
通过下载BD442数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载BD440/442
Medium Power Linear and Switching
Applications
•
Complement to BD439, BD441 respectively
TO-126
1. Emitter 2.Collector 3.Base
1
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
C
Symbol
Parameter
Value
Units
V
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
CBO
: BD440
: BD442
- 60
- 80
V
V
CES
CEO
EBO
: BD440
: BD442
- 60
- 80
V
V
: BD440
: BD442
- 60
- 80
V
V
Emitter-Base Voltage
Collector Current (DC)
- 5
V
A
I
I
I
- 4
- 7
C
*Collector Current (Pulse)
Base Current
A
CP
B
- 1
A
P
Collector Dissipation (T =25°C)
36
W
°C
°C
C
C
T
T
Junction Temperature
Storage Temperature
150
J
- 65 ~ 1 50
STG
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
V
(sus)
Collector-Emitter Sustaining Voltage
CEO
: BD440
: BD442
I = - 100mA, I = 0
-60
-80
V
V
C
B
I
Collector Cut-off Current
Collector Cut-off Current
: BD440
: BD442
V
V
= - 60V, I = 0
= - 80V, I = 0
E
- 100
- 100
µA
µA
CBO
CB
CB
E
I
: BD440
: BD442
V
V
= - 60V, V = 0
- 100
- 100
µA
µA
CES
CE
CE
BE
= - 80V, V = 0
BE
I
Emitter Cut-off Current
* DC Current Gain
V
V
= - 5V, I = 0
- 1
mA
EBO
EB
CE
C
h
: BD440
: BD442
: BD440
: BD442
: BD440
: BD442
= - 5V, I = - 10mA
20
15
40
40
25
15
140
140
140
140
FE
C
V
V
= - 1V, I = - 500mA
C
CE
CE
= - 1V, I = - 2A
C
V
(sat)
* Collector-Emitter Saturation Voltage
* Base-Emitter ON Voltage
I
= - 2A, I = - 0.2A
- 0.8
- 1.5
V
CE
C
B
V
(on)
V
V
= - 5V, I = - 10mA
-0.58
V
V
BE
CE
CE
C
= -1 V, I = - 2A
C
f
Current Gain Bandwidth Product
V
= - 1V, I = - 250mA
3
MHz
T
CE
C
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
Typical Characteristics
1000
100
10
-1
VCE = -1V
IC = 10 IB
-0.1
1
-0.01
-0.1
-0.01
-0.1
-1
-10
-1
-10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
-5.0
1000
VCE = -1V
-4.5
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
-0.0
100
10
1
-0.0
-0.5
-1.0
-1.5
-2.0
-0.1
-1
-10
-100
VBE[V], BASE-EMITTER VOLTAGE
VCB[V], COLLECTOR BASE VOLTAGE
Figure 3. Base-Emitter On Voltage
Figure 4. Collector-Base Capacitance
48
42
36
30
24
18
12
6
-10
IC MAX. (Pulsed)
1µs
10µs
IC Max. (Continuous)
-1
BD440
BD442
-0.1
0
-1
-10
-100
0
25
50
75
100
125
150
175
200
TC[oC], CASE TEMPERATURE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
Figure 6. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
Package Demensions
TO-126
8.00 ±0.30
3.25 ±0.20
ø3.20 ±0.10
(1.00)
(0.50)
0.75 ±0.10
1.75 ±0.20
1.60 ±0.10
0.75 ±0.10
#1
+0.10
–0.05
0.50
2.28TYP
[2.28±0.20]
2.28TYP
[2.28±0.20]
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
SuperSOT™-3
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FAST®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
OPTOPLANAR™
PACMAN™
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
POP™
PowerTrench®
QFET™
HiSeC™
QS™
UltraFET®
VCX™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
SMART START™
Stealth™
FACT™
FACT Quiet Series™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H2
BD442 替代型号
| 型号 | 制造商 | 描述 | 替代类型 | 文档 |
| BD442G | ONSEMI | Plastic Medium Power Silicon PNP Transistor | 功能相似 |
|
| BD442STU | ONSEMI | 4.0 A, 80 V PNP Bipolar Power Transistor, 1920-TUBE | 功能相似 |
|
| BD442S | FAIRCHILD | Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/ | 功能相似 |
|
BD442 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| BD442G | ONSEMI | Plastic Medium Power Silicon PNP Transistor | 获取价格 |
|
| BD442LEADFREE | CENTRAL | Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, | 获取价格 |
|
| BD442S | FAIRCHILD | Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, | 获取价格 |
|
| BD442STU | FAIRCHILD | PNP Epitaxial Silicon Transistor, TO-126 (SOT32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD), 1920/RAIL | 获取价格 |
|
| BD442STU | ONSEMI | 4.0 A, 80 V PNP Bipolar Power Transistor, 1920-TUBE | 获取价格 |
|
| BD449 | INFINEON | PNP SILICON EPIBASE TRANSISTORS | 获取价格 |
|
| BD4505N | SHUNYE | 45 AMP BLOCK DIODES | 获取价格 |
|
| BD4505P | SHUNYE | 45 AMP BLOCK DIODES | 获取价格 |
|
| BD450M2EFJ-C | ROHM | BD4xxM2-C系列是45V耐压、输出电压精度±2％、输出电流200mA、消耗电流40µA的低待机电流稳压器，是输出电压为3.3V或5.0V的固定型产品。本IC适合用来降低蓄电池直连系统的消耗电流。可选择有无输出关断功能，相应产品在向CTL端子施加HIGH电压时元件输出ON，施加LOW电压时元件输出OFF。输出相位补偿电容器可使用陶瓷电容器。本IC内置防止因输出短路等发生IC破坏的过电流保护、以及防止因过负荷状态等使IC发生热破坏的过热保护电路。We recommend BD450U2EFJ-C for your new development. It uses different production lines for the purpose of improving production efficiency. Electric characteristics noted in Datasheet does not differ between Production Line. | 获取价格 |
|
| BD450M2EFJ-CE2 | ROHM | Fixed Positive LDO Regulator, 5V, 0.35V Dropout, PDSO8, HTSOP-8 | 获取价格 |
|
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