BDW23 [FAIRCHILD]
Hammer Drivers, Audio Amplifiers Applications; 锤驱动器，音频放大器应用
| 型号： | BDW23 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Hammer Drivers, Audio Amplifiers Applications |
| 文件： | 总5页 (文件大小：42K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BDW23/A/B/C
Hammer Drivers, Audio Amplifiers
Applications
•
•
Power Darlington TR
Complement to BDW24, BDW24A, BDW24B and BDW24C respectively
TO-220
1.Base 2.Collector 3.Emitter
1
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
C
Symbol
Parameter
Value
Units
V
Collector-Base Voltage
CBO
: BDW23
45
60
80
V
V
V
V
: BDW23A
: BDW23B
: BDW23C
100
V
Collector-Emitter Voltage
CEO
: BDW23
45
60
80
V
V
V
V
: BDW23A
: BDW23B
: BDW23C
100
V
Emitter-Base Voltage
Collector Current (DC)
5
V
A
EBO
I
I
I
6
C
*Collector Current (Pulse)
Base Current
8
0.2
A
CP
B
A
P
Collector Dissipation (T =25°C)
50
W
°C
°C
C
C
T
T
Junction Temperature
Storage Temperature
150
J
- 65 ~ 150
STG
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Electrical Characteristics T =25°C unless otherwise noted
C
Unit
s
Symbol
(sus)
Parameter
Test Condition
Min.
Typ.
Max.
V
Collector-Emitter Sustaining Voltage
CEO
: BDW23
I
= 100mA, I = 0
45
60
80
V
V
V
V
C
B
: BDW23A
: BDW23B
: BDW23C
100
I
Collector Cut-off Current
: BDW23
CBO
V
V
V
V
= 45V, I = 0
200
200
200
200
µA
µA
µA
µA
CB
CB
CB
CB
E
: BDW23A
: BDW23B
: BDW23C
= 60V, I = 0
E
= 80V, I = 0
E
= 100V, I = 0
E
I
Collector Cut-off Current
: BDW23
CEO
V
V
V
V
= 22V, I = 0
500
500
500
500
µA
µA
µA
µA
CE
CE
CE
CE
B
: BDW23A
: BDW23B
: BDW23C
= 30V, I = 0
B
= 40V, I = 0
B
= 50V, I = 0
B
I
Emitter Cut-off Current
* DC Current Gain
V
= 5V, I = 0
2
mA
EBO
EB
C
h
V
V
V
= 3V, I = 1A
1000
750
100
FE
CE
CE
CE
C
= 3V, I = 2A
20000
C
= 3V, I = 6A
C
V
(sat)
* Collector-Emitter Saturation Voltage
I
I
= 2A, I = 8mA
2
3
V
V
CE
C
C
B
= 6A, I = 60mA
B
V
V
(sat)
(on)
* Base-Emitter Saturation Voltage
* Base-Emitter ON Voltage
I
= 2A, I = 8mA
2.5
V
BE
BE
C
B
V
V
= 3V, I = 1A
2.5
3
V
V
CE
CE
C
= 3V, I = 6A
C
V
* Parallel Diode Forward Voltage
I = 2A
1.8
V
F
F
* Pulse Test: PW =300µs, duty Cycle =1.5% Pulsed
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Typical Characteristics
10000
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
VCE = 3V
VCE = 3V
1000
100
0.1
1
10
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
IC[A], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
100
IC = 250 IB
2.4
2.0
1.6
1.2
0.8
0.4
0.0
IC(max). Pulsed
10
10µs
IC(max).
Continuous
100µs
1
1ms
BDW23
10ms
BDW23A
BDW23B
BDW23C
0.1
1
10
100
1000
0.1
1
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 3. Base-Emitter On Voltage
Figure 4. Safe Operating Area
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
200
TC[oC], CASE TEMPERATURE
Figure 5. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Package Demensions
TO-220
4.50 ±0.20
9.90 ±0.20
(8.70)
+0.10
1.30
–0.05
ø3.60 ±0.10
(45
°
)
1.27 ±0.10
1.52 ±0.10
0.80 ±0.10
+0.10
–0.05
0.50
2.40 ±0.20
2.54TYP
2.54TYP
[2.54 ±0.20
]
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
©2000 Fairchild Semiconductor International
Rev. A, February 2000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
HiSeC™
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
Bottomless™
CoolFET™
CROSSVOLT™
E2CMOS™
FACT™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench®
QFET™
VCX™
FACT Quiet Series™
QS™
FAST®
Quiet Series™
SuperSOT™-3
SuperSOT™-6
FASTr™
GTO™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2000 Fairchild Semiconductor International
Rev. E
相关型号：
BDW23-S
Power Bipolar Transistor, 6A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, PLASTIC, TO-220, FM-3
BOURNS
BDW23A-S
Power Bipolar Transistor, 6A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, PLASTIC, TO-220, FM-3
BOURNS
BDW23AJ69Z
Power Bipolar Transistor, 6A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
FAIRCHILD
BDW23ATU
Power Bipolar Transistor, 6A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明