BF244B [FAIRCHILD]
N-Channel RF Amplifier; N通道射频放大器
| 型号： | BF244B |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | N-Channel RF Amplifier |
| 文件： | 总2页 (文件大小：29K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BF244A
BF244B
BF244C
TO-92
S
G
D
N-Channel RF Amplifier
This device is designed for RF amplifier and mixer applications
operating up to 450 MHz, and for analog switching requiring low
capacitance. Sourced from Process 50.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VDG
VGS
ID
Drain-Gate Voltage
Gate-Source Voltage
Drain Current
30
- 30
V
V
50
mA
mA
IGF
Forward Gate Current
Storage Temperature Range
10
-55 to +150
Tstg
°
C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
BF244A / BF244B / BF244C
PD
Total Device Dissipation
Derate above 25 C
350
2.8
mW
mW/ C
°
°
Thermal Resistance, Junction to Case
125
Rθ
C/W
°
JC
Thermal Resistance, Junction to Ambient
357
Rθ
C/W
°
JA
1997 Fairchild Semiconductor Corporation
N-Channel RF Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
OFF CHARACTERISTICS
V(BR)GSS
IGSS
VGSS(off)
VGS
Gate-Source Breakdown Voltage
30
V
nA
V
IG = 1.0 µA, VDS = 0
VGS = - 20 V, VDS = 0
VDS = 15 V, ID = 10 nA
Gate Reverse Current
Gate-Source Cutoff Voltage
Gate-Source Voltage
5.0
- 0.5
- 8.0
- 0.4
- 1.6
- 3.2
- 2.2
- 3.8
- 7.5
V
V
V
VDS = 15 V, ID = 200 µA 244A
244B
244C
ON CHARACTERISTICS
IDSS
Zero-Gate Voltage Drain Current
2.0
6.0
12
6.5
15
25
mA
mA
mA
VDS = 15 V, VGS = 0
244A
244B
244C
SMALL SIGNAL CHARACTERISTICS
mmhos
mmhos
Forward Transfer Admittance
VDS = 15 V, VGS = 0, f = 1.0 kHz
VDS = 15 V, VGS = 0, f = 200 MHz
VDS = 15 V, VGS = 0, f = 1.0 kHz
3.0
6.5
yfs
5.6
40
Output Admittance
µ
mhos
mhos
pF
yos
Reverse Transfer Admittance
Input Capacitance
VDS = 15 V, VGS = 0, f = 200 MHz
VDS = 20 V, VGS = - 1.0 V
1.0
3.0
0.7
yrs
µ
Ciss
Crss
Reverse Transfer Capacitance
VDS = 20 V, VGS = - 1.0 V,
f = 1.0 MHz
pF
Output Capacitance
Noise Figure
VDS = 20 V, VGS = - 1.0 V,
f = 1.0 MHz
0.9
1.5
700
pF
dB
Coss
NF
V
DS = 15 V, VGS = 0, RG = 1.0 kΩ,
f = 100 MHz
DS = 15 V, VGS = 0
Cut-Off Frequency
V
MHz
F(Yfs)
5
Typical Characteristics
Channel Resistance vs Temperature
Transfer Characteristics
1000
20
VGS(OFF) = -4.5V
V DS = 15V
TA = -55 OC
TA = +25 O
500
VGS(OFF ) = -1.0V
16
12
8
300
200
C
-2.5 V
-5.0V
O
TA = +125 C
TA = -55 OC
100
50
TA = +25O
C
-8.0 V
O
TA = +125 C
30
20
4
V DS = 100mV
V GS = 0 V
-2.5 V
-2
10
0
-50
0
50
100
150
0
-1
-3
-4
-5
TA - AMBIENT TEMPERATURE ( C)
VGS - GATE-SOURCE VOLTAGE(V)
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