BF246B [FAIRCHILD]
N-Channel Switch; N沟道开关
| 型号： | BF246B |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | N-Channel Switch |
| 文件： | 总3页 (文件大小：101K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BF246B
N-Channel Switch
•
•
•
This device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers.
Sourced from process 51.
See J111 for characteristics.
TO-92
D G S
1. Drain 2. Gate 3. Source
Absolute Maximum Ratings*
T = 25°C unless otherwise noted
a
Symbol
DG
Parameter
Value
25
Units
V
V
V
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
-25
V
GS
I
50
mA
°C
GF
T , T
Operating and Storage Junction Temperature Range
-55 ~ 150
J
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may e impaired.
Notes:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
= 25°C unless otherwise noted
Electrical Characteristics
T
a
Symbol
Parameter
Conditions
Min.
-25
Max
Units
Off Characteristics
V
Gate-Source Breakdown Voltage
Gate Reverse Current
I
= 1.0µA, V = 0
V
nA
V
(BR)GSS
GSS
G
DS
I
V
V
= -15V, V = 0
-5.0
GS
DS
DS
V
Gate-Source Cutoff Voltage
= 15V, I = 10nA
-0.6
60
-14.5
GS(off)
D
On Characteristics*
Zero-Gate Voltage Drain Current *
I
V
= 15V, V = 0
140
mA
DSS
DS
GS
Thermal Characteristics
T = 25°C unless otherwise noted
a
Symbol
D
Parameter
Total Device Dissipation
Value
Units
P
625
mW
5.0
mW/°C
R
R
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
125
357
°C/W
°C/W
θJC
θJA
©2005 Fairchild Semiconductor Corporation
BF246B Rev. A
1
www.fairchildsemi.com
Mechanical Dimensions
TO-92
Dimensions in Millimeters
2
www.fairchildsemi.com
BF246B Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to
be an exhaustive list of all such trademarks.
FAST®
IntelliMAX™
ISOPLANAR™
LittleFET™
POP™
SPM™
A
CEx™
FASTr™
Power247™
Stealth™
ActiveArray™
Bottomless™
CoolFET™
FPS™
PowerEdge™
PowerSaver™
PowerTrench®
QFET®
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic®
TINYOPTO™
TruTranslation™
UHC™
FRFET™
GlobalOptoisolator™
GTO™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
CROSSVOLT™
DOME™
HiSeC™
QS™
EcoSPARK™
I2C™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
µSerDes™
E2CMOS™
i-Lo™
MSXPro™
EnSigna™
ImpliedDisconnect™
OCX™
FACT™
OCXPro™
FACT Quiet Series™
OPTOLOGIC®
OPTOPLANAR™
PACMAN™
UltraFET®
Across the board. Around the world.™
SILENT SWITCHER®
SMART START™
UniFET™
The Power Franchise®
VCX™
Programmable Active Droop™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Definition
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I15
3
www.fairchildsemi.com
BF246B Rev. A
相关型号：
BF246BB
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226AA
ALLEGRO
BF246BB-STYLE-A
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226AA
ALLEGRO
BF246BB-STYLE-B
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226AA
ALLEGRO
BF246BB-STYLE-C
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226AA
ALLEGRO
BF246BB-STYLE-D
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226AA
ALLEGRO
BF246BB-STYLE-E
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226AA
ALLEGRO
BF246BB-STYLE-G
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226AA
ALLEGRO
BF246BB-STYLE-H
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226AA
ALLEGRO
BF246BRB
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226AA
ALLEGRO
©2020 ICPDF网 联系我们和版权申明