BS170J35Z [FAIRCHILD]
Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92, 3 PIN;
| 型号： | BS170J35Z |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92, 3 PIN 开关 晶体管 |
| 文件： | 总14页 (文件大小：1256K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
March 2009
BS170 / MMBF170
N-Channel Enhancement Mode Field Effect Transistor
Features
General Description
These N-Channel enhancement mode field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. These products have been
designed to minimize on-state resistance while provide
rugged, reliable, and fast switching performance. They can
be used in most applications requiring up to 500mA DC.
These products are particularly suited for low voltage, low
current applications such as small servo motor control,
power MOSFET gate drivers, and other switching
applications.
■ High density cell design for low RDS(ON)
■ Voltage controlled small signal switch.
■ Rugged and reliable.
.
■ High saturation current capability.
D
S
D
G
G
S
TO - 92
SOT - 23
Absolute Maximum Ratings Ta = 25°C unless otherwise noted
Symbol
Parameter
BS170
MMBF170
Units
VDSS
Drain-Source Voltage
60
60
V
V
VDGR
VGSS
ID
Drain-Gate Voltage (RGS ≤ 1MΩ)
Gate-Source Voltage
± 20
V
Drain Current - Continuous
- Pulsed
500
500
800
mA
1200
TJ, TSTG
TL
Operating and Storage Temperature Range
- 55 to 150
300
°C
°C
Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds
Thermal Characteristics Ta = 25°C unless otherwise noted
Symbol
Parameter
BS170
MMBF170
Units
PD
Maximum Power Dissipation
Derate above 25°C
830
6.6
300
2.4
mW
mW/°C
RθJA
Thermal Resistance, Junction to Ambient
150
417
°C/W
© 2009 Fairchild Semiconductor Corporation
BS170 / MMBF170 Rev. E1
www.fairchildsemi.com
1
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Conditions
Type
Min.
Typ.
Max. Units
Off Characteristics
BVDSS
IDSS
Drain-Source Breakdown Voltage VGS = 0 V, ID = 100 μA
All
All
All
60
V
Zero Gate Voltage Drain Current
VDS = 25 V, VGS = 0 V
0.5
10
μA
IGSSF
Gate - Body Leakage, Forward
VGS = 15V, VDS = 0 V
nA
On Characteristics (Notes 1)
VGS(th)
RDS(ON)
gFS
Gate Threshold Voltage
VDS = VGS, ID = 1 mA
All
All
0.8
2.1
1.2
3
5
V
Ω
Static Drain-Source On-Resistance VGS = 10 V, ID = 200 mA
Forward Transconductance
VDS = 10 V, ID = 200 mA
BS170
320
320
mS
VDS ≥ 2 VDS(on), ID = 200 mA MMBF170
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
All
All
All
24
17
7
40
30
10
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Notes 1)
ton
Turn-On Time
Turn-Off Time
VDD = 25 V, ID = 200 mA,
BS170
MMBF170
BS170
10
10
10
10
ns
ns
V
GS = 10 V, RGEN = 25 Ω
VDD = 25 V, ID = 500 mA,
GS = 10 V, RGEN = 50 Ω
VDD = 25 V, ID = 200 mA,
GS = 10 V, RGEN = 25 Ω
VDD = 25 V, ID = 500 mA,
V
toff
V
MMBF170
V
GS = 10 V, RGEN = 50 Ω
Note:
1. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%.
© 2009 Fairchild Semiconductor Corporation
BS170 / MMBF170 Rev. E1
www.fairchildsemi.com
2
Typical Electrical Characteristics
© 2009 Fairchild Semiconductor Corporation
BS170 / MMBF170 Rev. E1
www.fairchildsemi.com
3
Typical Electrical Characteristics (continued)
© 2009 Fairchild Semiconductor Corporation
BS170 / MMBF170 Rev. E1
www.fairchildsemi.com
4
Typical Electrical Characteristics (continued)
© 2009 Fairchild Semiconductor Corporation
BS170 / MMBF170 Rev. E1
www.fairchildsemi.com
5
© 2009 Fairchild Semiconductor Corporation
BS170 / MMBF170 Rev. E1
www.fairchildsemi.com
6
© 2009 Fairchild Semiconductor Corporation
BS170 / MMBF170 Rev. E1
www.fairchildsemi.com
7
© 2009 Fairchild Semiconductor Corporation
BS170 / MMBF170 Rev. E1
www.fairchildsemi.com
8
© 2009 Fairchild Semiconductor Corporation
BS170 / MMBF170 Rev. E1
www.fairchildsemi.com
9
Mechanical Dimensions ( TO - 92 )
TO - 92
Dimensions in Millimeters
www.fairchildsemi.com
© 2009 Fairchild Semiconductor Corporation
BS170 / MMBF170 Rev. E1
10
SOT-23 Std Tape and Reel Data
SOT23-3L Packaging
Configuration: F igure 1.0
Cus tomized Lab el
Packaging Description:
S OT 23-3L par ts ar e s hipped in tape. T he carrier tape is
made from
a d issipative (carbon filled) polycarbonate
resin. T he cover tape i s a m ultilayer film (Heat Activated
Adhes ive in nature) primarily c omposed of polyester film,
adhes ive l ayer, seal ant, and anti-static s prayed ag ent.
T hes e reeled parts i n s tandard option ar e s hipped with
3, 000 units per 7" or 177mm diameter reel. T he reels ar e
dark blue in c olor and is made of polystyrene plas tic ( anti-
static coated). O ther option c omes in 10,000 units per 13"
or 330c m diameter reel. T his and s ome other options ar e
des cribed in the P ackaging Information table.
Antistatic Cover Tape
T hes e f ull reels are i ndividually labeled and plac ed inside
a s tandar d immediate box made o f recyclable corrugated
brown paper w ith
a F airchild logo p rinting. One box
contains five reels maximum. And thes e immediate boxes
are plac ed inside a labeled s hipping box which c omes in
different s izes depending on the number of parts s hipped.
F63TNR Lab el
E mbosse d
Carri er Tape
3P
3P
3P
3P
SOT23-3L Packaging Information
S tandar d
(no flow code)
Packaging Option
D87Z
Packaging type
TN R
TN R
10, 000
13"
SOT23-3L Unit Orientation
Qty per Reel/Tube/Bag
Reel Size
3, 000
7" Dia
B arcode L abel
Box Dimension (mm)
Max qty per Box
193x 183x80 355x 333x40
15, 000
0. 0082
0. 1175
30, 000
0. 0082
0. 4006
Weight per unit (gm)
Weight per Reel (kg)
Note/Comments
B arcode
Lab el
355m m x 333m m x 40m m
Intermediate c ontainer for 13" re el option
B arcode L abel s ample
B arcode
Lab el
LO T : CB VK 741B 019
F S ID: MMS Z5221B
QT Y : 3000
SPEC
:
D/C1: D9842AB
D/C2:
F AIRCHI LD S E MIC ONDUCT OR C ORP OR AT ION
QTY 1:
SPEC REV:
QT Y 2:
CP N:
(F 63T NR)
193m m x 183m m x 80m m
P izza B ox for S tandard O ption
SOT23-3L Tape Leader and Trailer
Configuration: F igure 2.0
C arrier Tape
C over T ape
C omponents
Trailer Ta pe
Leade r T ape
300mm minimum or
500mm minimum or
75 em pty pock ets
125 em pty pockets
©2001 Fairchild Semiconductor Corporation
October 2004, Rev. D1
SOT-23 Std Tape and Reel Data, continued
SOT23-3L Embossed Carrier Tape
Configuration: Figure 3.0
P0
P2
D0
D1
T
E1
E2
W
F
Wc
B0
Tc
K0
A0
P1
User Direction of Feed
Dimensions are in millimeter
E1 E2
A0
B0
W
D0
D1
F
P1
P0
K0
T
Wc
Tc
Pkg type
SOT-23
(8mm)
3.15
+/-0.10
2.77
+/-0.10
8.0
+/-0.3
1.55
+/-0.05
1.125
+/-0.125
1.75
+/-0.10
6.25
min
3.50
+/-0.05
4.0
+/-0.1
4.0
+/-0.1
1.30
+/-0.10
0.228
+/-0.013
5.2
+/-0.3
0.06
+/-0.02
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
0.5mm
maximum
20 deg maximum
Typical
component
cavity
center line
0.5mm
maximum
B0
20 deg maximum component rotation
Typical
component
center line
Sketch A (Side or Front Sectional View)
Component Rotation
Sketch C (Top View)
Component lateral movement
A0
Sketch B (Top View)
Component Rotation
SOT23-3L Reel Configuration: Figure 4.0
W1 Measured at Hub
Dim A
Max
Dim A
max
See detail AA
Dim N
7" Diameter Option
B Min
Dim C
See detail AA
Dim D
min
W3
13" Diameter Option
W2 max Measured at Hub
DETAIL AA
Dim W2
Dimensions are in inches and millimeters
Reel
Option
Tape Size
8mm
Dim A
Dim B
Dim C
Dim D
Dim N
Dim W1
Dim W3 (LSL-USL)
7.00
177.8
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
2.165
55
0.331 +0.059/-0.000
8.4 +1.5/0
0.567
14.4
0.311 - 0.429
7.9 - 10. 9
7" Dia
13.00
330
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
4.00
100
0.331 +0.059/-0.000
8.4 +1.5/0
0.567
14.4
0.311 - 0.429
7.9 - 10. 9
8mm
13" Dia
October 2004, Rev. D1
Mechanical Dimensions ( SOT - 23 )
SOT - 23
Dimensions in Millimeters
www.fairchildsemi.com
© 2009 Fairchild Semiconductor Corporation
BS170 / MMBF170 Rev. E1
13
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Definition of Terms
Datasheet Identification Product Status
Definition
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Advance Information
Preliminary
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
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The datasheet is for reference information only.
Rev. I40
© 2008 Fairchild Semiconductor Corporation
www.fairchildsemi.com
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