BSR18A [FAIRCHILD]
PNP General Purpose Amplifier; PNP通用放大器
| 型号： | BSR18A |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | PNP General Purpose Amplifier |
| 文件： | 总6页 (文件大小：76K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSR18A
C
E
SOT-23
Mark: T92
B
PNP General Purpose Amplifier
This device is designed as a general purpose amplifier and
switching applications at collector currents of 10 µA to 100
mA. Sourced from Process 66.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
40
40
V
V
Collector-Base Voltage
3
Emitter-Base Voltage
5.0
V
Collector Current - Continuous
Operating and Storage Junction Temperature Range
200
mA
-55 to +150
C
°
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
*BSR18A
PD
Total Device Dissipation
Derate above 25 C
350
2.8
mW
mW/ C
°
°
Thermal Resistance, Junction to Ambient
357
Rθ
C/W
°
JA
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
1997 Fairchild Semiconductor Corporation
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown
Voltage
40
V
I
C = 10 µA, IB = 0
V(BR)CBO
V(BR)EBO
ICBO
Collector-Base Breakdown Voltage
IC = 1.0 mA, IE = 0
IE = 10 µA, IC = 0
VCB = 30 V
40
V
V
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
5.0
50
50
nA
nA
IEBO
Emitter-Cutoff Current
VEB = 3.0 V, IC = 0
ON CHARACTERISTICS*
hFE
DC Current Gain
IC = 0.1 mA, VCE = 1.0 V
IC = 1.0 mA, VCE = 1.0 V
IC = 10 mA, VCE = 1.0 V
IC = 50 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
60
80
100
60
300
30
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
0.25
0.4
0.85
0.95
V
V
V
V
VCE(sat)
VBE(sat)
0.65
250
SMALL SIGNAL CHARACTERISTICS
fT
Transition Frequency
IC = 10 mA, VCE = 20,
f = 100 MHz
MHz
Collector-Base Capacitance
Emitter-Base Capacitance
Input Impedance
VCB = 5.0 V, IE = 0, f = 100 kHz
4.5
10
pF
pF
C
C
cb
eb
VEB = 0.5 V, IC = 0, f = 100 kHz
VCE= 10 V,IC= 1.0 mA,f=1.0 kHz
VCE= 10 V,IC= 1.0 mA,f=1.0 kHz
VCE= 10 V,IC= 1.0 mA,f=1.0 kHz
2.0
100
3.0
12
k
Ω
hie
hfe
hoe
Small-Signal Current Gain
Output Admittance
400
60
S
µ
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
IC = 10 mA, IB1 = 1.0 mA,
VEB = 0.5 V
35
35
ns
ns
ns
ns
td
tr
275
75
ts
tf
IC = 10 mA, IBon = IBoff = 1.0 mA
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 0.01%
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
Spice Model
PNP (Is=1.41f Xti=3 Eg=1.11 Vaf=18.7 Bf=180.7 Ne=1.5 Ise=0 Ikf=80m Xtb=1.5 Br=4.977 Nc=2 Isc=0 Ikr=0
Rc=2.5 Cjc=9.728p Mjc=.5776 Vjc=.75 Fc=.5 Cje=8.063p Mje=.3677 Vje=.75 Tr=33.42n Tf=179.3p Itf=.4 Vtf=4
Xtf=6 Rb=10)
PNP General Purpose Amplifier
(continued)
Typical Characteristics
Collector-Emitter Saturation
Voltage vs Collector Current
Typical Pulsed Current Gain
vs Collector Current
0.3
0.25
0.2
250
V
= 1.0V
β = 10
CE
125 °C
200
150
100
50
0.15
0.1
25 °C
25 °C
125°C
- 40 °C
0.05
0
- 40 °C
1
10
100 200
0.1 0.2
0.5
1
2
5
10 20
50 100
IC - COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (mA)
Base-Emitter Saturation
Voltage vs Collector Current
Base Emitter ON Voltage vs
Collector Current
1
0.8
0.6
0.4
0.2
0
β = 10
- 40 °C
1
0.8
0.6
0.4
0.2
0
- 40 °C
25 °C
125 °C
25 °C
3
125 °C
V
= 1V
CE
1
10
100
200
0.1
1
10
25
I C - COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (mA)
Collector-Cutoff Current
vs Ambient Temperature
Common-Base Open Circuit
Input and Output Capacitance
vs Reverse Bias Voltage
100
10
V
= 25V
CB
10
8
C
obo
6
1
C
4
ibo
0.1
2
0.01
0
25
50
75
100
125
0.1
1
10
TA - AMBIE NT TEMP ERATURE ( C)
°
REVERSE BIAS VOLTAGE (V)
PNP General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Noise Figure vs Frequency
Noise Figure vs Source Resistance
6
12
VCE = 5.0V
VCE = 5.0V
f = 1.0 kHz
5
4
10
8
I
= 1.0 mA
C
3
2
1
0
I
= 100 µA, R = 200Ω
6
C
S
4
I
I
= 1.0 mA, R = 200Ω
C
C
S
I
= 100 µA
C
2
= 100 µA, R = 2.0 kΩ
S
0
0.1
1
10
100
0.1
1
10
100
f - FREQUENCY (kHz)
R
- SOURCE RESISTANCE (
kΩ
S
Switching Times
vs Collector Current
Turn On and Turn Off Times
vs Collector Current
500
100
500
100
t
t
s
off
I
c
t
I B1
=
t
on
f
10
t
on
VBE(OFF)= 0.5V
I
10
1
10
1
t
r
I
c
c
t
IB1= IB2
=
IB1= IB2
=
off
10
10
t
d
1
10
- COLLECTOR CURRENT (mA)
100
1
10
100
I
I
- COLLECTOR CURRENT (mA)
C
Power Dissipation vs
Ambient Temperature
350
300
250
200
150
100
50
SOT-23
0
0
25
50
75
100
125
150
TEMPERATURE (oC)
PNP General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Voltage Feedback Ratio
Input Impedance
100
10
V
= 10 V
CE
f = 1.0 kHz
1
10
0.1
1
0.1
0.1
1
10
1
10
I C - COLLECTOR CURRENT (mA)
I C- COLLECTOR CURRENT (mA)
Output Admittance
Current Gain
1000
500
1000
V
= 10 V
V
= 10 V
CE
CE
f = 1.0 kHz
f = 1.0 kHz
200
100
50
100
3
20
10
10
0.1
0.1
1
10
1
10
I C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
PowerTrench
QFET™
QS™
SyncFET™
TinyLogic™
UHC™
ACEx™
FASTr™
GlobalOptoisolator™
GTO™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
QT Optoelectronics™
VCX™
HiSeC™
Quiet Series™
SILENT SWITCHER
SMART START™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G
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