BSS100D74Z [FAIRCHILD]
Small Signal Field-Effect Transistor, 0.22A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92, 3 PIN;型号: | BSS100D74Z |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | Small Signal Field-Effect Transistor, 0.22A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92, 3 PIN |
文件: | 总13页 (文件大小:522K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
September 1996
BSS100 / BSS123
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
BSS100: 0.22A, 100V. RDS(ON) = 6W @ VGS = 10V.
These N-Channel logic level enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process has been especially tailored to
minimize on-state resistance, provide superior switching
performance. This product is particularly suited to low
voltage, low current applications, such as small servo
motor controls, power MOSFET gate drivers, and other
switching applications.
BSS123: 0.17A, 100V. RDS(ON) = 6W @ VGS = 10V
High density cell design for extremely low RDS(ON)
Voltage controlled small signal switch.
Rugged and reliable.
.
_______________________________________________________________________________
D
G
BSS100
BSS123
S
Absolute Maximum Ratings
TA = 25°C unless otherwise noted
BSS100
Symbol
Parameter
BSS123
Units
V
VDSS
Drain-Source Voltage
100
100
VDGR
V
Drain-Gate Voltage (RGS < 20KW)
VGSS
Gate-Source Voltage - Continuous
± 14
± 20
V
- Non Repetitive (TP < 50 mS)
Drain Current - Continuous
- Pulsed
ID
0.22
0.9
0.17
0.68
0.36
A
PD
Total Power Dissipation @ TA = 25°C
Operating and Storage Temperature Range
0.63
W
°C
°C
TJ,TSTG
TL
-55 to 150
300
Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds
THERMAL CHARACTERISTICS
RqJA
Thermal Resistacne, Junction-to-Ambient
200
350
°C/W
© 1997 Fairchild Semiconductor Corporation
BSS100 Rev. F1 / BSS123 Rev. F1
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Type
Min
Typ
Max Units
OFF CHARACTERISTICS
BVDSS
IDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
VDS = 100 V, VGS = 0 V
VDS = 100 V, VGS = 0 V
VDS = 100 V, VGS = 0 V
VDS = 60 V, VGS = 0 V
VDS = 20 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
VGS = 20 V, VDS = 0 V
All
100
V
BSS100
BSS123
Zero Gate Voltage Drain Current
15
1
µA
µA
µA
nA
nA
nA
nA
TJ=125oC
All
60
10
10
10
50
BSS100
BSS123
BSS100
IGSSF
Gate - Body Leakage, Forward
BSS123
ON CHARACTERISTICS (Note 1)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 1 mA
All
0.8
1.4
2.8
2.8
3.2
3.2
0.4
0.4
2
6
V
BSS100
BSS123
BSS100
BSS123
BSS100
BSS123
RDS(ON)
Static Drain-Source On-Resistance
VGS = 10 V, ID = 0.22 A
VGS = 10 V, ID = 0.17 A
VGS = 4.5 V, ID = 0.22 A
VGS = 4.5 V, ID = 0.17 A
VDS = 10 V, ID = 0.22 A
VDS = 10 V, ID = 0.17 A
W
6
10
10
gFS
Forward Transconductance
0.08
0.08
S
DYNAMIC CHARACTERISTICS
C
Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
All
All
All
29
10
2
60
15
6
pF
iss
Coss
Crss
Output Capacitance
pF
pF
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 1)
tD(on)
tr
tD(off)
tf
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Totall Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 30 V, ID = 0.28 A,
VGS = 10 V, RGEN = 50 W
All
All
All
All
All
All
All
8
8
ns
ns
ns
13
16
2
ns
Qg
Qgs
Qgd
VDS = 10 V, ID = 0.22 A,
VGS = 10 V,
1.4
nC
nC
nC
0.15 0.25
0.2
0.4
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
BSS100
BSS123
BSS100
BSS123
BSS100
BSS123
IS
Maximum Continuous Source Current
Maximum Pulse Source Current (Note 1)
Drain-Source Diode Forward Voltage
0.22
0.17
0.9
A
A
V
ISM
VSD
Note:
0.68
1.3
VGS = 0 V, IS = 0.44 A
VGS = 0 V, IS = 0.34 A
0.9
0.9
1.3
1. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
BSS100 Rev. F1 / BSS123 Rev. F1
Typical Electrical Characteristics
0.6
2.4
2
VGS =10V
3.0
5.0
4.0
3.5
0.5
0.4
0.3
0.2
0.1
0
VGS =2.5V
3.0
2.5
1.6
1.2
0.8
3.5
4.0
5.0
10
2.0
0
1
2
3
4
5
0
0.1
0.2
0.3
0.4
0.5
0.6
V
, DRAIN-SOURCE VOLTAGE (V)
I
, DRAIN CURRENT (A)
DS
D
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current.
2.2
2
3
VGS = 10V
ID = 220mA
VGS =10V
2.5
2
1.8
1.6
1.4
1.2
1
T
= 125°C
J
1.5
1
25°C
-55°C
0.8
0.6
0.4
0.5
0
-50
-25
0
25
50
75
100
125
150
0
0.2
0.4
0.6
0.8
1
T
, JUNCTION TEM PERATURE (°C)
J
I
, DRAIN CURRENT (A)
D
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
1.2
1.15
I D = 250µA
VDS = VGS
I D = 250µA
1.1
1
1.1
1.05
1
0.9
0.8
0.7
0.95
0.9
-50
-50
-25
0
25
50
75
100
125
150
175
-25
0
25
50
75
100
125
150
175
T
, JUNCTION TEMPERATURE (°C)
J
T
, JUNCTION TEMPERATURE (°C)
J
Figure 6. Breakdown Voltage Variation with
Temperature.
Figure 5. Gate Threshold Variation with
Temperature.
BSS100 Rev. F1 / BSS123 Rev. F1
Typical Electrical Characteristics (continued)
80
50
10
8
ID =220m A
VDS = 5V
C
iss
20
20
10
5
C
6
oss
4
C
2
rss
f = 1 MHz
V GS = 0V
1
0.1
0
0.2
0.5
1
2
5
10
50
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
, DRAIN TO SOURCE VOLTAGE (V)
Q
g
, GATE CHARGE (nC)
DS
Figure 7. Capacitance Characteristics.
Figure 8. Gate Charge Characteristics.
0.8
0.6
0.4
0.2
0
VDS = 5V
T
= -55°C
J
25°C
125°C
0
0.1
0.2
0.3
0.4
0.5
0.6
I
, DRAIN CURRENT (A)
D
Figure 9. Transconductance Variation with Drain
Current and Temperature.
ton
toff
VDD
td(off)
t d(on)
tf
tr
RL
VIN
90%
90%
D
VOUT
VOUT
VGS
10%
10%
90%
RGEN
INVERTED
DUT
G
VIN
50%
50%
S
10%
PULSE WIDTH
Figure 11. Switching Waveforms.
Figure 10. Switching Test Circuit.
BSS100 Rev. F1 / BSS123 Rev. F1
2
1
2
1
0.5
0.5
0.2
0.1
0.2
0.1
0.05
0.05
VGS = 20V
SINGLE PULSE
TA = 25°C
VGS = 20V
SINGLE PULSE
TA = 25°C
0.01
0.01
0.005
0.005
1
5
10
20
50
100 150
1
5
10
20
50
100 150
V
, DRAIN-SOURCE VOLTAGE (V)
DS
V
, DRAIN-SOURCE VOLTAGE (V)
DS
Figure 13. BSS123 Maximum Safe
Operating Area.
Figure 12. BSS100 Maximum Safe
Operating Area.
1
D = 0.5
0.2
0.5
R
(t) = r(t)
*
R
qJA
qJA
R
= 200o C/W
0.2
0.1
q
JA
0.1
P(pk)
0.05
t
0.05
1
t
2
0.02
T
- T = P * R
(t)
0.01
J
A
q
JA
Single Pulse
0.02
0.01
Duty Cycle, D = t /t
1
2
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
1
Figure 14. BSS100 Transient Thermal Response Curve.
1
D = 0.5
0.5
0.2
0.2
0.1
R
(t) = r(t)
*
R
qJA
qJA
R
= 347 o C/W
0.1
qJA
0.05
0.05
0.02
0.01
P(pk)
t
1
0.01
t
2
Single Pulse
T
- T = P * R
(t)
J
A
q
JA
Duty Cycle, D = t /t
1
2
0.002
0.001
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
1
Figure 15. BSS123 Transient Thermal Response Curve.
BSS100 Rev. F1 / BSS123 Rev. F1
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Hd
P
Pd
b
Ha
W1
d
S
L
H1
HO
L1
WO
t
W2
W
t1
P1 F1
P2
DO
ITEM DESCRIPTION
SYMBOL
DIMENSION
PO
b
0.098 (max)
Base of Package to Lead Bend
Component Height
Ha
HO
H1
Pd
Hd
P
0.928 (+/- 0.025)
0.630 (+/- 0.020)
0.748 (+/- 0.020)
0.040 (max)
User Direction of Feed
Lead Clinch Height
Component Base Height
Component Alignment ( side/side )
Component Alignment ( front/back )
Component Pitch
0.031 (max)
0.500 (+/- 0.020)
0.500 (+/- 0.008)
0.150 (+0.009, -0.010)
0.247 (+/- 0.007)
0.104 (+/- 0 .010)
0.018 (+0.002, -0.003)
0.429 (max)
PO
P1
P2
F1/F2
d
Feed Hole Pitch
Hole Center to First Lead
Hole Center to Component Center
Lead Spread
Lead Thickness
L
Cut Lead Length
L1
t
0.209 (+0.051, -0.052)
0.032 (+/- 0.006)
0.021 (+/- 0.006)
0.708 (+0.020, -0.019)
0.236 (+/- 0.012)
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Taped Lead Length
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DO
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D2
D2
D3
D4
W1
W2
W3
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0.650
3.100
2.700
0.370
1.630
14.025
1.200
0.700
3.300
3.100
0.570
1.690
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Customized Label
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Hub Recess Inner Diameter
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Flange to Flange Inner Width
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W2
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September 1999, Rev. C
SOT-23 Tape and Reel Data and Package Dimensions, continued
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P0
P2
D0
D1
T
E1
E2
W
F
Wc
B0
Tc
K0
A0
P1
User Direction of Feed
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E1 E2
A0
B0
W
D0
D1
F
P1
P0
K0
T
Wc
5.2
Tc
Pkg type
SOT-23
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3.15
+/-0.10
2.77
+/-0.10
8.0
+/-0.3
1.55
+/-0.05
1.125
1.75
+/-0.10
6.25
min
3.50
+/-0.05
4.0
+/-0.1
4.0
+/-0.1
1.30
+/-0.10
0.228
+/-0.013
0.06
+/-0.02
+/-0.125
+/-0.3
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rotational and lateral movement requirements (see sketches A, B, and C).
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maximum
20 deg maximum
Typical
component
cavity
center line
0.5mm
maximum
B0
20 deg maximum component rotation
Typical
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center line
Sketch A (Side or Front Sectional View)
Component Rotation
Sketch C (Top View)
Component lateral movement
A0
Sketch B (Top View)
Component Rotation
SOT-23 Reel Configuration: Figure 4.0
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Dim A
Max
Dim A
max
See detail AA
Dim N
7"Diameter Option
B Min
Dim C
See detail AA
Dim D
min
W3
13" Diameter Option
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Dim A
Dim B
Dim C
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Dim W1
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7.00
177.8
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
2.165
55
0.331 +0.059/-0.000
8.4 +1.5/0
0.567
14.4
0.311 – 0.429
7.9 – 10.9
7" Dia
13.00
330
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
4.00
100
0.331 +0.059/-0.000
8.4 +1.5/0
0.567
14.4
0.311 – 0.429
7.9 – 10.9
8mm
13" Dia
September 1999, Rev. C
SOT-23 Tape and Reel Data and Package Dimensions, continued
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September 1998, Rev. A1
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the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G
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