BU807 [FAIRCHILD]

High Voltage & Fast Switching Darlington Transistor; 高电压和快速开关达林顿晶体管
BU807
型号: BU807
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

High Voltage & Fast Switching Darlington Transistor
高电压和快速开关达林顿晶体管

晶体 开关 晶体管 达林顿晶体管 局域网
文件: 总4页 (文件大小:44K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BU806/807  
High Voltage & Fast Switching Darlington  
Transistor  
Using In Horizontal Output Stages of 110° Crt Video Displays  
BUILT-IN SPEED-UP Diode Between Base and Emitter  
TO-220  
1.Base 2.Collector 3.Emitter  
1
NPN Epitaxial Silicon Darlington Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
CBO  
: BU806  
: BU807  
400  
330  
V
V
CEO  
: BU806  
: BU807  
200  
150  
V
V
Emitter-Base Voltage  
Collector Current (DC)  
*Collector Current (Pulse)  
Base Current  
6
V
A
EBO  
I
I
I
8
C
15  
2
A
CP  
B
A
P
Collector Dissipation (T =25°C)  
60  
W
°C  
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 55 ~150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Max.  
Units  
V
(sus)  
* Collector-Emitter Sustaining Voltage  
CEO  
CES  
CEV  
EBO  
: BU806  
: BU807  
I
= 100mA, I = 0  
200  
150  
V
V
C
B
I
I
I
Collector Cut-off Current  
: BU806  
V
V
= 400V, V = 0  
= 330V, V = 0  
BE  
100  
100  
µA  
µA  
CE  
CE  
BE  
: BU807  
Collector Cut-off Current  
: BU806  
V
V
= 400V, V = -6V  
= 330V, V = -6V  
BE  
100  
100  
µA  
µA  
CE  
CE  
BE  
: BU807  
Emitter Cut-off Current  
V
= 6V, I = 0  
3
mA  
V
BE  
C
V
V
(sat)  
* Collector-Emitter Saturation Voltage  
* Base-Emitter Saturation Voltage  
* Damper Diode Forward Voltage  
I
= 5A, I = 50mA  
1.5  
2.4  
2
CE  
BE  
F
C
B
(sat)  
I
= 5A, I = 50mA  
V
C
B
V
I = 4A  
V
F
* Pulsed: pulsed duration = 300µs, duty cycle = 1.5%  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  
Typical Characteristics  
1000  
10  
Ic = 100 IB  
VBE(sat)  
VCE = 5V  
100  
1
VCE = 1.5V  
VCE(sat)  
10  
0.1  
0.1  
0.1  
1
10  
1
10  
100  
IC[A], COLLECTOR CURRENT  
IC[A], COLLECTOR CURRENT  
Figure 1. DC current Gain  
Figure 2. Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
1000  
100  
10  
IC MAX. (Pulse)  
IC MAX. (DC)  
1ms  
10us  
10  
1
1
100us  
0.1  
BU806  
BU807  
0.01  
0.01  
0.1  
0.1  
0.1  
1
10  
100  
1000  
1
10  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
IC[A], COLLECTOR CURRENT  
Figure 3. Damper Diode  
Figure 4. Safe Operating Area  
80  
70  
60  
50  
40  
30  
20  
10  
0
0
50  
100  
150  
200  
TC[oC], CASE TEMPERATURE  
Figure 5. Power Derating  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  
Package Demensions  
TO-220  
4.50 ±0.20  
9.90 ±0.20  
(8.70)  
+0.10  
1.30  
–0.05  
ø3.60 ±0.10  
(45  
°
)
1.27 ±0.10  
1.52 ±0.10  
0.80 ±0.10  
+0.10  
–0.05  
0.50  
2.40 ±0.20  
2.54TYP  
2.54TYP  
[2.54 ±0.20  
]
[2.54 ±0.20]  
10.00 ±0.20  
Dimensions in Millimeters  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is  
not intended to be an exhaustive list of all such trademarks.  
ACEx™  
HiSeC™  
SuperSOT™-8  
SyncFET™  
TinyLogic™  
UHC™  
Bottomless™  
CoolFET™  
CROSSVOLT™  
E2CMOS™  
FACT™  
ISOPLANAR™  
MICROWIRE™  
POP™  
PowerTrench®  
QFET™  
VCX™  
FACT Quiet Series™  
QS™  
FAST®  
Quiet Series™  
SuperSOT™-3  
SuperSOT™-6  
FASTr™  
GTO™  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY  
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;  
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR  
INTERNATIONAL.  
As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body,  
or (b) support or sustain life, or (c) whose failure to perform  
when properly used in accordance with instructions for use  
provided in the labeling, can be reasonably expected to  
result in significant injury to the user.  
2. A critical component is any component of a life support  
device or system whose failure to perform can be  
reasonably expected to cause the failure of the life support  
device or system, or to affect its safety or effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or In  
Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
©2000 Fairchild Semiconductor International  
Rev. E  

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