CNY17-4S-M_技术文档

November 2009

CNY171M, CNY172M, CNY173M, CNY174M,

CNY17F1M, CNY17F2M, CNY17F3M, CNY17F4M,

MOC8106M, MOC8107M

Phototransistor Optocouplers

Features

Description

■ UL recognized (File # E90700, Vol. 2)

The CNY17XM, CNY17FXM and MOC810XM devices

consist of a Gallium Arsenide IRED coupled with an NPN

phototransistor in a dual in-line package.

■ VDE recognized

– Add option V (e.g., CNY17F2VM)

– File #102497

■ Current transfer ratio in select groups

■ High BV

: 70V minimum (CNY17XM, CNY17FXM,

CEO

MOC810XM)

■ Closely matched current transfer ratio (CTR)

minimizes unit-to-unit variation.

Package Outlines

■ Very low coupled capacitance along with no chip to

pin 6 base connection for minimum noise

susceptability (CNY17FXM, MOC810XM)

Applications

■ Power supply regulators

■ Digital logic inputs

■ Microprocessor inputs

■ Appliance sensor systems

■ Industrial controls

Schematics

1

2

6

1

2

6

BASE

ANODE

NC

ANODE

CATHODE

5 COLLECTOR

4 EMITTER

CATHODE

5 COLLECTOR

4 EMITTER

3

NC

CNY17F1M/2M/3M/4M

MOC8106M/7M

CNY171M/2M/3M/4M

www.fairchildsemi.com

CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be

operable above the recommended operating conditions and stressing the parts to these levels is not recommended.

In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.

The absolute maximum ratings are stress ratings only.

Symbol

Parameters

Value

Units

TOTAL DEVICE

T

Storage Temperature

Operating Temperature

Junction Temperature

Lead Solder Temperature

-40 to +150

-40 to +100

-40 to +125

260 for 10 sec

250

°C

STG

T

OPR

T

ºC

J

T

°C

SOL

P

Total Device Power Dissipation @ 25°C (LED plus detector)

Derate Linearly From 25°C

mW

mW/°C

D

2.94

EMITTER

I

Continuous Forward Current

Reverse Voltage

60

6

mA

V

F

V

R

I (pk)

Forward Current – Peak (1µs pulse, 300pps)

LED Power Dissipation 25°C Ambient

Derate Linearly From 25°C

1.5

120

1.41

A

F

P

mW

mW/°C

D

DETECTOR

I

Continuous Collector Current

Collector-Emitter Voltage

50

70

mA

V

C

V

CEO

ECO

Emitter Collector Voltage

7

V

P

Detector Power Dissipation @ 25°C

Derate Linearly from 25°C

150

1.76

mW

mW/°C

D

CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1

www.fairchildsemi.com

2

(1)

Electrical Characteristics ^{(T = 25°C Unless otherwise speciﬁed.)}

A

Individual Component Characteristics

Symbol

EMITTER

Parameters

Test Conditions

Device

Min. Typ. Max. Units

V

Input Forward Voltage I = 60mA

CNY17XM,

CNY17FXM

1.0

1.35

1.65

1.50

V

F

I = 10mA

MOC810XM

1.15

18

F

C

Capacitance

V = 0 V, f = 1.0MHz

All

pF

µA

J

F

I

Reverse Leakage

Current

V = 6V

0.001

10

R

DETECTOR

Breakdown Voltage

Collector to Emitter I = 1.0mA, I = 0

BV

All

CNY171M/2M/3M/4M

All

70

7

100

120

10

CEO

CBO

ECO

C

F

V

Collector to Base

I = 10µA, I = 0

C F

Emitter to Collector I = 100µA, I = 0

E

F

Leakage Current

I

Collector to Emitter

CEO

V

= 10 V, I = 0

All

1

50

20

nA

CE

F

Collector to Base

V

= 10 V, I = 0

CNY171M/2M/3M/4M

CBO

CB

F

Capacitance

C

Collector to Emitter

V

= 0, f = 1MHz

All

8

pF

CE

CB

EB

CE

CB

EB

C

Collector to Base

Emitter to Base

CNY171M/2M/3M/4M

20

10

C

Isolation Characteristics

Symbol Characteristic

Test Conditions

Min.

Typ.*

Max.

Units

V

Input-Output Isolation Voltage f = 60 Hz, t = 1 sec.,

7500

Vac(pk)

ISO

(4)

I

≤ 2µA

I-O

(4)

11

R

C

Isolation Resistance

Isolation Capacitance

V

= 500 VDC

10

Ω

ISO

I-O

(4)

= Ø, f = 1MHz

0.2

pF

ISO

(3)

Transfer Characteristics (T = 25°C Unless otherwise speciﬁed.)

A

Symbol

DC Characteristics

Test Conditions

Min. Typ.* Max. Units

COUPLED

(2)

(CTR)

Output Collector

Current

MOC8106M

MOC8107M

CNY17F1M

CNY17F2M

CNY17F3M

CNY17F4M

CNY171M

CNY172M

CNY173M

CNY174M

I = 10mA, V = 10V

50

100

40

150

300

80

%

F

CE

I = 10mA, V = 5V

F

CE

63

125

200

320

80

100

160

40

63

125

200

320

0.4

100

160

V

Collector-Emitter CNY17XM/FXM

Saturation Voltage

I

= 2.5mA, I = 10mA

V

CE(sat)

C

F

MOC8106M/7M

= 500µA, I = 5.0mA

F

*All typicals at T = 25°C

A

CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1

www.fairchildsemi.com

3

(1)

Electrical Characteristics ^{(Continued) (T = 25°C Unless otherwise speciﬁed.)}

A

(3)

Transfer Characteristics (Continued)

Symbol

AC Characteristics⁽⁴⁾

Test Conditions

Min. Typ.* Max. Units

NON-SATURATED SWITCHING TIME

t

Turn-On Time

All Devices

I

= 2.0mA, V = 10V, R = 100Ω

2

3

10

µs

on

C

CC

L

t

Turn-Off Time

Delay Time

Rise Time

All Devices

= 2.0mA, V = 10V, R = 100Ω

10

µs

off

CC

L

t

CNY17XM/XFM

All Devices

I = 10mA, V = 5V, R = 75Ω

5.6

d

F

CC

L

t

I

= 2.0mA, V = 10V, R = 100Ω

1

2

r

C

CC

L

CNY17XM/FXM

All Devices

I = 10mA, V = 5V, R = 75Ω

4.0

4.1

F

CC

L

Storage Time

Fall Time

I = 10mA, V = 5V, R = 75Ω

µs

s

F

CC

L

t

I

= 2.0mA, V = 10V, R = 100Ω

f

C

CC

L

CNY17XM/FXM

I = 10mA, V = 5V, R = 75Ω

3.5

F

CC

L

SATURATED SWITCHING TIMES

t

Turn-on Time

CNY171M/F1M

I = 20mA, V = 5V, R = 1kΩ

5.5

8.0

µs

on

F

CC

L

CNY172M/3M/4M

CNY17F2M/F3M/F4M

I = 10mA, V

= 5V, R = 1kΩ

L

F

CC

t

Rise Time

CNY171M/F1M

I = 20mA, V = 5V, R = 1kΩ

4.0

6.0

r

F

CC

L

CNY172M/3M/4M

CNY17F2M/F3M/F4M

I = 10mA, V

= 5V, R = 1kΩ

L

F

CC

t

Delay Time

Turn-off Time

Fall Time

CNY171M/F1M

I = 20mA, V = 5V, R = 1kΩ

5.5

8.0

d

F

CC

L

CNY172M/3M/4M

CNY17F2M/F3M/F4M

I = 10mA, V = 5V, R = 1kΩ

F CC L

t

CNY171M/F1M

I = 20mA, V = 0.4V

34

39

off

F

CE

CNY172M/3M/4M

CNY17F2M/F3M/F4M

I = 10mA, V = 0.4V

F CE

t

CNY171M/F1M

I = 20mA, V = 5V, R = 1kΩ

20.0

24.0

f

F

CC

L

CNY172M/3M/4M

CNY17F2M/F3M/F4M

I = 10mA, V = 5V, R = 1kΩ

F CC L

t

Storage Time

CNY171M/F1M

I = 20mA, V = 5V, R = 1kΩ

34.0

39.0

s

F

CC

L

CNY172M/3M/4M

I = 10mA, V = 5V, R = 1kΩ

F CC L

CNY17F2M/F3M/F4M

*All typicals at T = 25°C

A

Notes:

1. Always design to the specified minimum/maximum electrical limits (where applicable).

2. Current Transfer Ratio (CTR) = I /I x 100%.

C F

3. For test circuit setup and waveforms, refer to Figures 10 and 11.

4. For this test, Pins 1 and 2 are common, and Pins 4 are 5 are common.

CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1

www.fairchildsemi.com

4

Safety and Insulation Ratings

As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.

Compliance with the safety ratings shall be ensured by means of protective circuits.

Symbol

Parameter

Min.

Typ.

Max.

Unit

Installation Classiﬁcations per DIN VDE 0110/1.89

Table 1

For Rated Main Voltage < 150Vrms

For Rated Main voltage < 300Vrms

Climatic Classiﬁcation

I-IV

55/100/21

2

Pollution Degree (DIN VDE 0110/1.89)

Comparative Tracking Index

CTI

175

V

Input to Output Test Voltage, Method b,

1594

V

PR

peak

V

x 1.875 = V , 100% Production Test

IORM

PR

with tm = 1 sec, Partial Discharge < 5pC

Input to Output Test Voltage, Method a,

1275

peak

V

x 1.5 = V , Type and Sample Test

PR

IORM

with tm = 60 sec, Partial Discharge < 5pC

Max. Working Insulation Voltage Vpeak

Highest Allowable Over Voltage Vpeak

External Creepage

V

850

6000

7

V

IORM

peak

V

IOTM

peak

mm

Ω

External Clearance

7

Insulation Thickness

0.5

9

RIO

Insulation Resistance at Ts, V = 500V

10

IO

CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1

www.fairchildsemi.com

5

Typical Performance Characteristics

Fig. 2 Normalized CTR vs. Ambient Temperature

1.4

1.2

1.0

0.8

0.6

0.4

0.2

Fig. 1 Normalized CTR vs. Forward Current

1.6

V

T

= 5.0V

= 25˚C

Normalized to

= 10mA

CE

A

I

F

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

I

= 5mA

F

I

= 10mA

F

= 20mA

F

Normalized to:

= 10mA

I

F

T

A

= 25˚C

0

2

4

6

8

10

12

14

16

18

20

-60

-40

-20

0

20

40

60

80

100

I

– FORWARD CURRENT (mA)

F

T

– AMBIENT TEMPERATURE (˚C)

A

Fig. 3 CTR vs. RBE (Unsaturated)

Fig. 4 CTR vs. RBE (Saturated)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

I

F

= 20mA

I

= 10mA

F

I

= 5mA

V

= 0.3V

F

CE

I

= 20mA

F

I

= 10mA

= 5mA

F

I

F

V

= 5.0V

CE

10

100

1000

10

100

1000

R

BE

– BASE RESISTANCE (kΩ)

R

BE

– BASE RESISTANCE (kΩ)

Fig. 5 Switching Speed vs. Load Resistor

1000

100

10

Fig. 6 Normalized t vs. R

on

BE

I

V

T

= 10mA

F

= 10V

5.0

CC

= 25˚C

A

V

I

R

10V

= 2mA

= 100Ω

CC =

C

L

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

T

f

T

off

T

on

T

r

1

10

100

1000

10000

100000

0.1

R

BE

– BASE RESISTANCE (kΩ)

0.1

1

10

100

R – LOAD RESISTOR (kΩ)

CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1

www.fairchildsemi.com

6

Typical Performance Characteristics (Continued)

Fig. 8 LED Forward Voltage vs. Forward Current

1.8

Fig. 7 Normalized t vs. R

off

BE

1.4

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

1.7

1.6

1.5

1.4

T

= -55°C

= 25°C

= 100°C

A

1.3

1.2

1.1

1.0

T

V

10V

A

CC =

= 2mA

I

C

R

= 100Ω

L

T

A

10

100

1000

10000

100000

1

10

100

R

– BASE RESISTANCE (k Ω)

BE

I

– LED FORWARD CURRENT (mA)

F

Fig. 9 Collector-Emitter Saturation Voltage vs Collector Current

100

T

A

= 25˚C

10

1

I

F

= 2.5mA

0.1

I

F

= 20mA

0.01

0.001

I

F

= 5mA

I

F

= 10mA

0.01

0.1

1

10

I

- COLLECTOR CURRENT (mA)

C

V_CC

INPUT PULSE

10%

90%

R_L

I_C

OUTPUT PULSE

I_F

INPUT

OUTPUT (V

)

CE

t_d

t_s

t_f

t_r

t_on

t_off

Figure 11. Switching Time Waveforms

Figure 10. Switching Time Test Circuit

CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1

www.fairchildsemi.com

7

Package Dimensions

Through Hole

0.4" Lead Spacing

8.13–8.89

6

4

8.13–8.89

6

4

6.10–6.60

Pin 1

1

3

Pin 1

1

3

5.08 (Max.)

3.28–3.53

0.25–0.36

7.62 (Typ.)

5.08 (Max.)

3.28–3.53

0.25–0.36

0.38 (Min.)

2.54–3.81

2.54 (Bsc)

0.38 (Min.)

2.54–3.81

2.54 (Bsc)

0.20–0.30

(0.86)

15° (Typ.)

(0.86)

0.41–0.51

0.76–1.14

0.20–0.30

10.16–10.80

1.02–1.78

0.41–0.51

0.76–1.14

1.02–1.78

Surface Mount

(1.78)

8.13–8.89

6

4

(1.52)

(2.54)

(7.49)

6.10–6.60

8.43–9.90

(10.54)

1

3

(0.76)

Pin 1

Rcommended Pad Layout

0.25–0.36

3.28–3.53

5.08

(Max.)

0.20–0.30

0.38 (Min.)

0.16–0.88

(8.13)

2.54 (Bsc)

(0.86)

0.41–0.51

0.76–1.14

1.02–1.78

Note:

All dimensions in mm.

CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1

www.fairchildsemi.com

8

Ordering Information

Order Entry Identiﬁer

(Example)

Option

Description

No option

CNY171M

CNY171SM

Standard Through Hole Device

Surface Mount Lead Bend

Surface Mount; Tape and Reel

0.4" Lead Spacing

S

SR2

T

CNY171SR2M

CNY171TM

V

CNY171VM

IEC60747-5-2

TV

CNY171TVM

CNY171SVM

CNY171SR2VM

IEC60747-5-2, 0.4" Lead Spacing

IEC60747-5-2, Surface Mount

IEC60747-5-2, Surface Mount, Tape and Reel

SV

SR2V

Marking Information

1

2

CNY17-1

X YY Q

6

V

5

3

4

Deﬁnitions

1

2

Fairchild logo

Device number

VDE mark (Note: Only appears on parts ordered with VDE

option – See order entry table)

3

4

5

6

One digit year code, e.g., ‘7’

Two digit work week ranging from ‘01’ to ‘53’

Assembly package code

CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1

www.fairchildsemi.com

9

Carrier Tape Specification

12.0 ± 0.1

2.0 ± 0.05

4.5 ± 0.20

Ø1.5 MIN

1.75 ± 0.10

0.30 ± 0.05

4.0 ± 0.1

11.5 ± 1.0

24.0 ± 0.3

9.1 ± 0.20

21.0 ± 0.1

Ø1.5 ± 0.1/-0

10.1 ± 0.20

0.1 MAX

User Direction of Feed

Reflow Profile

300

280

260

240

220

200

180

160

140

120

100

80

260°C

>245°C = 42 Sec

Time above

183°C = 90 Sec

°C

1.822°C/Sec Ramp up rate

60

40

33 Sec

20

0

60

120

180

270

360

Time (s)

CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1

www.fairchildsemi.com

10

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not

intended to be an exhaustive list of all such trademarks.

PowerTrench^®

PowerXS™

The Power Franchise^®

Auto-SPM™

Build it Now™

CorePLUS™

CorePOWER™

CROSSVOLT™

CTL™

Current Transfer Logic™

EcoSPARK^®

EfficentMax™

EZSWITCH™*

™*

F-PFS™

FRFET^®

Global Power Resource^SM

Green FPS™

Green FPS™ e-Series™

Gmax™

GTO™

IntelliMAX™

ISOPLANAR™

MegaBuck™

MICROCOUPLER™

MicroFET™

Programmable Active Droop™

QFET^®

TinyBoost™

TinyBuck™

QS™

Quiet Series™

RapidConfigure™

TinyLogic^®

TINYOPTO™

TinyPower™

TinyPWM™

™

Saving our world, 1mW/W/kW at a time™

SmartMax™

TinyWire™

TriFault Detect™

TRUECURRENT™*

µSerDes™

SMART START™

SPM^®

®

MicroPak™

MillerDrive™

MotionMax™

Motion-SPM™

OPTOLOGIC^®

STEALTH™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SupreMOS™

SyncFET™

Fairchild^®

Fairchild Semiconductor^®

FACT Quiet Series™

FACT^®

UHC^®

Ultra FRFET™

UniFET™

VCX™

VisualMax™

XS™

OPTOPLANAR^®

FAST^®

®

FastvCore™

FETBench™

PDP SPM™

Power-SPM™

Sync-Lock™

FlashWriter^®

®

*

FPS™

* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR

CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE

SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN,

WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE

EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are

intended for surgical implant into the body or (b) support or sustain life,

and (c) whose failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be reasonably

expected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, or

system whose failure to perform can be reasonably expected to

cause the failure of the life support device or system, or to affect its

safety or effectiveness.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com,

under Sales Support.

Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts.

Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications,

and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of

counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are

listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have

full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information.

Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide

any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our

customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status

Definition

Datasheet contains the design specifications for product development. Specifications may change in

any manner without notice.

Advance Information

Preliminary

Formative / In Design

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild

Semiconductor reserves the right to make changes at any time without notice to improve design.

First Production

Full Production

Not In Production

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes

at any time without notice to improve the design.

No Identification Needed

Obsolete

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.

The datasheet is for reference information only.

Rev. I40

CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1

www.fairchildsemi.com

11


型号：	CNY17-4S-M
厂家：	FAIRCHILD SEMICONDUCTOR
描述：	1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, SURFACE MOUNT, DIP-6 输出元件
文件：	总11页 (文件大小：271K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

CNY17-4S-M [FAIRCHILD]

相关型号：

CNY17-4S-TA1

CNY17-4S-V

CNY17-4S1

CNY17-4S1(TA)

CNY17-4S1(TA)-V

CNY17-4S1(TB)

CNY17-4S1(TB)-V

CNY17-4SD

CNY17-4SM

CNY17-4SM

CNY17-4SMT&R

CNY17-4SR2-M