EGP10C.TR [FAIRCHILD]
Rectifier Diode, 1 Element, 1A, 150V V(RRM), Silicon, DO-41;
| 型号： | EGP10C.TR |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Rectifier Diode, 1 Element, 1A, 150V V(RRM), Silicon, DO-41 二极管 |
| 文件： | 总3页 (文件大小：47K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EGP10A - EGP10K
Features
• Superfast recovery time for high
efficiency.
• Low forward voltage, high current
capability.
•
Low leakage current.
DO-41
COLOR BAND DENOTES CATHODE
• High surge current capability.
Fast Rectifiers (Glass Passivated)
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Value
Symbol
Parameter
Units
10A 10B 10C 10D 10F 10G 10J 10K
VRRM
IF(AV)
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current,
50
100
150 200 300 400 600 800
V
A
1.0
.375 " lead length @ T = 55 C
°
L
IFSM
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
30
A
Storage Temperature Range
-65 to +150
-65 to +150
C
C
Tstg
TJ
°
°
Operating Junction Temperature
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
Parameter
Value
Units
PD
Power Dissipation
Thermal Resistance, Junction to Ambient
2.5
50
W
RθJA
C/W
°
Electrical Characteristics
TA = 25°C unless otherwise noted
Device
Symbol
Parameter
Units
10A 10B 10C 10D 10F 10G 10J 10K
VF
trr
Forward Voltage @ 1.0 A
0.95
22
1.25
1.7
V
Reverse Recovery Time
50
75
ns
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
IR
5.0
100
A
µ
µA
Reverse Current @ rated VR T = 25 C
°
A
TA = 125°C
CT
Total Capacitance
15
pF
VR = 4.0 V, f = 1.0 MHz
2001 Fairchild Semiconductor Corporation
EPG10A - EPG10K, Rev. C
Typical Characteristics
30
25
20
15
10
5
1
0.75
SINGLE PHASE
HALF WAVE
60HZ
RESISTIVE OR
INDUCTIVE LOAD
0.5
0.25
.375" (9.0mm) LEAD
LENGTHS
0
0
25
50
75
100
125
150
175
1
2
5
10
20
50
100
Lead Temperature [ºC]
Number of Cycles at 60Hz
Figure 1. Forward Current Derating Curve
Figure 2. Non-Repetitive Surge Current
50
1000
100
T
= 150ºC
A
10
1
EGP10A-EGP10D
T
T
= 125
= 100
C
C
º
º
A
A
T
= 25 C
º
A
10
1
EGP10F-EGP10K
0.1
0.1
0.01
Pulse Width = 300µs
T
= 25ºC
A
2% Duty Cycle
0.01
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
0
20
40
60
80
100
120 140
Forward Voltage, V [V]
F
Percent of Rated Peak Reverse Voltage [%]
Figure 3. Forward Voltage Characteristics
Figure 4. Reverse Current vs Reverse Voltage
60
50
40
30
EGP10A-EGP10D
20
EGP10F-EGP10K
10
0
0.1
1
10
100
1000
Reverse Voltage, V [V]
R
Figure 5. Total Capacitance
50Ω
50Ω
NONINDUCTIVE
trr
NONINDUCTIVE
+0.5A
(-)
DUT
0
Pulse
Generator
(Note 2)
50V
(approx)
-0.25A
(+)
50Ω
NONINDUCTIVE
OSCILLOSCOPE
(Note 1)
NOTES:
-1.0A
1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf.
2. Rise time = 10 ns max; Source impedance = 50 ohms.
1.0cm
SET TIME BASE FOR
5/ 10 ns/ cm
Reverse Recovery Time Characterstic and Test Circuit Diagram
2001 Fairchild Semiconductor Corporation
EPG10A - EPG10K, Rev. C
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
â
SMART START™
STAR*POWER™
Stealth™
VCX™
FAST
ACEx™
Bottomless™
CoolFET™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
FASTr™
FRFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
CROSSVOLT™
DenseTrench™
DOME™
POP™
Power247™
PowerTrenchâ
QFET™
EcoSPARK™
E2CMOSTM
TinyLogic™
QS™
EnSignaTM
TruTranslation™
UHC™
QT Optoelectronics™
Quiet Series™
SILENTSWITCHERâ
FACT™
FACT Quiet Series™
UltraFETâ
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITYARISING OUT OF THE APPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICESORSYSTEMSWITHOUTTHEEXPRESSWRITTENAPPROVALOFFAIRCHILDSEMICONDUCTORCORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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