EGP10K [FAIRCHILD]

1.0 Ampere Glass Passivated High Efficiency Rectifiers; 1.0安培玻璃钝化高效整流二极管
EGP10K
型号: EGP10K
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

1.0 Ampere Glass Passivated High Efficiency Rectifiers
1.0安培玻璃钝化高效整流二极管

整流二极管 高效整流二极管
文件: 总3页 (文件大小:39K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Discr ete P OWER & Sign a l  
Tech n ologies  
EGP10A - EGP10K  
Features  
1.0 min (25.4)  
Superfast recovery time for high  
efficiency.  
Dimensions in  
inches (mm)  
0.205 (5.21)  
0.160 (4.06)  
Low forward voltage, high current  
capability.  
Low leakage current.  
DO-41  
0.107 (2.72)  
0.080 (2.03)  
COLOR BAND DENOTES CATHODE  
High surge current capability.  
0.034 (0.86)  
0.028 (0.71)  
1.0 Ampere Glass Passivated High Efficiency Rectifiers  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
IO  
Average Rectified Current  
1.0  
A
.375 " lead length @ T = 55 C  
°
L
Peak Forward Surge Current  
if(surge)  
8.3 ms single half-sine-wave  
Superimposed on rated load (JEDEC method)  
Total Device Dissipation  
30  
A
PD  
2.5  
17  
50  
W
mW/ C  
°
C/W  
Derate above 25 C  
°
Thermal Resistance, Junction to Ambient  
Rθ  
°
JA  
Storage Temperature Range  
-65 to +150  
-65 to +150  
C
C
°
Tstg  
TJ  
Operating Junction Temperature  
°
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Parameter  
Device  
Units  
10A  
10B  
100  
70  
10C  
150  
105  
150  
10D  
10F  
300  
210  
300  
10G  
400  
280  
400  
10J  
600  
420  
600  
10K  
800  
560  
800  
Peak Repetitive Reverse Voltage  
Maximum RMS Voltage  
50  
35  
50  
200  
140  
200  
V
V
V
100  
DC Reverse Voltage (Rated VR)  
Maximum Reverse Current  
5.0  
100  
A
A
µ
µ
@ rated VR  
TA = 25°C  
T = 125 C  
°
A
Maximum Reverse Recovery Time  
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A  
Maximum Forward Voltage @ 1.0 A  
50  
75  
nS  
0.95  
22  
1.25  
1.7  
V
Typical Junction Capacitance  
VR = 4.0 V, f = 1.0 MHz  
15  
pF  
EPG10A - EPG10K, Rev. A  
1999 Fairchild Semiconductor Corporation  
Typical Characteristics  
Non-Repetitive Surge Current  
Forward Current Derating Curve  
30  
25  
20  
15  
10  
5
1
0.75  
SINGLE PHASE  
HALF WAVE  
60HZ  
RESISTIVE OR  
INDUCTIVE LOAD  
0.5  
0.25  
.375" (9.0mm) LEAD  
LENGTHS  
0
0
25  
50  
75  
100  
125  
150  
175  
1
2
5
10  
20  
50  
100  
º
LEAD TEMPERATURE ( C)  
NUMBER OF CYCLES AT 60Hz  
Forward Characteristics  
Reverse Characteristics  
50  
1000  
100  
10  
T
= 150ºC  
A
10  
1
EGP10A-EGP10D  
T
T
= 125  
= 100  
C
C
º
º
A
A
T
= 25 C  
º
A
1
EGP10F-EGP10K  
0.1  
0.01  
0.1  
0.01  
Pulse Width = 300µs  
T
= 25ºC  
A
2% Duty Cycle  
0.2 0.4 0.6 0.8  
1
1.2 1.4 1.6 1.8  
0
20  
40  
60  
80  
100  
120 140  
FORWARD VOLTAGE (V)  
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)  
Junction Capacitance  
60  
50  
40  
30  
20  
EGP10A-EGP10D  
EGP10F-EGP10K  
10  
0
0.1  
1
10  
100  
1000  
REVERSE VOLTAGE (V)  
50  
50  
trr  
NONINDUCTIVE  
NONINDUCTIVE  
+0.5A  
(-)  
DUT  
0
Pulse  
Generator  
(Note 2)  
50V  
(approx)  
-0.25A  
(+)  
50  
OSCILLOSCOPE  
(Note 1)  
NONINDUCTIVE  
NOTES:  
-1.0A  
1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf.  
2. Rise time = 10 ns max; Source impedance = 50 ohms.  
1.0cm  
SET TIME BASE FOR  
5/ 10 ns/ cm  
Reverse Recovery Time Characterstic and Test Circuit Diagram  
EPG10A - EPG10K, Rev. A  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is  
not intended to be an exhaustive list of all such trademarks.  
ACEx™  
CoolFET™  
ISOPLANAR™  
MICROWIRE™  
POP™  
PowerTrench™  
QS™  
CROSSVOLT™  
E2CMOSTM  
FACT™  
FACT Quiet Series™  
Quiet Series™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
TinyLogic™  
FAST®  
FASTr™  
GTO™  
HiSeC™  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER  
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD  
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT  
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT  
RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or  
systems which, (a) are intended for surgical implant into  
the body, or (b) support or sustain life, or (c) whose  
failure to perform when properly used in accordance  
with instructions for use provided in the labeling, can be  
reasonably expected to result in significant injury to the  
user.  
2. A critical component is any component of a life  
support device or system whose failure to perform can  
be reasonably expected to cause the failure of the life  
support device or system, or to affect its safety or  
effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or  
In Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  

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