FAN7371_09 [FAIRCHILD]
High-Current High-Side Gate Drive IC; 大电流高边栅极驱动器IC型号: | FAN7371_09 |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | High-Current High-Side Gate Drive IC |
文件: | 总11页 (文件大小:1630K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
November 2009
FAN7371
High-Current High-Side Gate Drive IC
Features
Description
! Floating Channel for Bootstrap Operation to +600V
! 4A/4A Sourcing/Sinking Current Driving Capability
! Common-Mode dv/dt Noise Canceling Circuit
! 3.3V and 5V Input Logic Compatible
! Output In-phase with Input Signal
! Under- Voltage Lockout for VBS
The FAN7371 is a monolithic high-side gate drive IC,
which can drive high-speed MOSFETs and IGBTs that
operate up to +600V. It has a buffered output stage with
all NMOS transistors designed for high pulse current
driving capability and minimum cross-conduction.
Fairchild’s high-voltage process and common-mode
noise canceling techniques provide stable operation of
the high-side driver under high dv/dt noise circum-
stances. An advanced level-shift circuit offers high-side
gate driver operation up to VS=-9.8V (typical) for
! 25V Shunt Regulator on VDD and VBS
! 8-Lead Small Outline Package (SOP)
VBS=15V.
The UVLO circuit prevents malfunction when VBS is
lower than the specified threshold voltage.
Applications
! High-Speed Gate Driver
The high-current and low-output voltage drop feature
makes this device suitable for sustaine switch driver and
energy recovery switch driver in the Plasma Display
Panel application, motor drive inverter, switching power
supply, and high-power DC-DC converter applications.
! Sustaine Switch Driver in PDP Application
! Energy-Recovery Circuit Switch Driver in
PDP Application
! High-Power Buck Converter
! Motor Drive Inverter
8-SOP
Ordering Information
Operating
Temperature Range
Part Number
Package
Eco Status
Packing Method
FAN7371M(1)
FAN7371MX(1)
Tube
8-SOP
-40°C ~ 125°C
RoHS
Tape & Reel
Note:
1. These devices passed wave soldering test by JESD22A-111.
For Fairchild’s definition of Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html.
© 2008 Fairchild Semiconductor Corporation
FAN7371 Rev. 1.0.2
www.fairchildsemi.com
Typical Application Diagrams
15V
DBOOT3
RBOOT3
VS
15V
FAN7371
RBOOT1
DBOOT1
VB
1
2
3
4
8
7
6
5
VDD
IN
Q3
R3
HO
VS
IN3
D3
D4
FAN7371
CBOOT3
R4
NC
1
2
3
4
VB
HO
VS
VDD
IN
8
7
6
5
L1
NC
GND
IN1
CBOOT1
D1
D2
NC
R1
GND
NC
To Pannel
DBOOT2
R2
Q1
FAN7371
FAN7371
1
2
3
4
VB
HO
VS
VB
1
2
3
4
VDD
IN
8
7
6
5
8
7
6
5
VDD
IN
Q2
Q4
R5
CBOOT2
R7
R8
HO
VS
IN2
IN4
R6
NC
NC
C1
C3
GND
NC
NC
GND
C2
Energy Recovery Circuit Part
Sustain Drive Part
FAN7371 Rev.03
Figure 1. Floated Bidirectional Switch and Half-Bridge Driver: PDP application
15V
VIN
RBOOT
DBOOT
FAN7371
VB
VDD
1
2
8
R1
CBOOT
HO
IN
PWM
7
6
L1
R2
NC
GND
VS
3
4
C1
NC
C2
VOUT
5
D1
FAN7371 Rev.01
Figure 2. Step-Down (Buck) DC-DC Converter Application
© 2008 Fairchild Semiconductor Corporation
FAN7371 Rev. 1.0.2
www.fairchildsemi.com
2
Internal Block Diagram
VDD
VDD
1
4
8
7
6
VB
25V
UVLO
R
GND
HO
VS
R
NOISE
CANCELLER
IN
2
25V
S
Q
110K
Pins 3 and 5 are no connection.
FAN7371 Rev.04
Figure 3. Functional Block Diagram
Pin Configuration
VDD
IN
1
2
3
4
8
7
6
5
VB
HO
VS
FAN7371
NC
GND
NC
FAN7371 Rev.01
Figure 4. Pin Configuration (Top View)
Pin Definitions
Pin #
Name
Description
1
2
3
4
5
6
7
8
VDD
IN
Supply Voltage
Logic Input for High-Side Gate Driver Output
No Connection
NC
GND
NC
VS
Ground
No Connection
High-Voltage Floating Supply Return
High-Side Driver Output
High-Side Floating Supply
HO
VB
© 2008 Fairchild Semiconductor Corporation
FAN7371 Rev. 1.0.2
www.fairchildsemi.com
3
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. TA=25°C unless otherwise specified.
Symbol
VS
Characteristics
High-Side Floating Offset Voltage
High-Side Floating Supply Voltage(2)
High-Side Floating Output Voltage
Low-Side and Logic Supply Voltage(2)
Logic Input Voltage
Min.
VB-VSHUNT
-0.3
Max.
VB+0.3
625.0
VB+0.3
VSHUNT
VDD+0.3
± 50
Unit
V
VB
V
VHO
VDD
VIN
VS-0.3
-0.3
V
V
-0.3
V
dVS/dt
PD
Allowable Offset Voltage Slew Rate
Power Dissipation(3, 4, 5)
V/ns
W
0.625
200
θJA
Thermal Resistance
°C/W
°C
°C
°C
TJ
Junction Temperature
-55
-55
-40
+150
TSTG
TA
Storage Temperature
+150
Operating Ambient Temperature
+125
Notes:
2
This IC contains a shunt regulator on VDD and VBS with a normal breakdown voltage of 25V. Please note that this
supply pin should not be driven by a low-impedance voltage source greater than the VSHUNT specified in the
Electrical Characteristics section
3
4
Mounted on 76.2 x 114.3 x 1.6mm PCB (FR-4 glass epoxy material).
Refer to the following standards:
JESD51-2: Integral circuits thermal test method environmental conditions, natural convection, and
JESD51-3: Low effective thermal conductivity test board for leaded surface mount packages.
5
Do not exceed power dissipation (PD) under any circumstances.
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not
recommend exceeding them or designing to absolute maximum ratings.
Symbol
VBS
Parameter
High-Side Floating Supply Voltage
High-Side Floating Supply Offset Voltage
High-Side Output Voltage
Min.
VS+10
6-VDD
VS
Max.
VS+20
600
Unit
V
VS
V
VHO
VIN
VB
V
Logic Input Voltage
GND
10
VDD
20
V
VDD
Supply Voltage
V
© 2008 Fairchild Semiconductor Corporation
FAN7371 Rev. 1.0.2
www.fairchildsemi.com
4
Electrical Characteristics
VBIAS(VDD, VBS)=15.0V, TA = 25°C, unless otherwise specified. The VIN and IIN parameters are referenced to GND.
The VO and IO parameters are relative to VS and are applicable to the respective output HO.
Symbol
Characteristics
Test Condition
Min. Typ. Max. Unit
POWER SUPPLY SECTION
IQDD Quiescent VDD Supply Current
VIN=0V or 5V
fIN=20KHz, No Load
25
35
70
μA
μA
IPDD
Operating VDD Supply Current
100
BOOTSTRAPPED SUPPLY SECTION
VBS Supply Under-Voltage Positive Going
Threshold Voltage
VBSUV+
VBS=Sweep
VBS=Sweep
VBS=Sweep
8.2
7.5
9.2 10.2
V
V
V
VBS Supply Under-Voltage Negative Going
VBSUV-
8.5
0.7
9.5
Threshold Voltage
VBS Supply Under-Voltage Lockout
VBSHYS
Hysteresis Voltage
ILK
VB=VS=600V
VIN=0V or 5V
Offset Supply Leakage Current
Quiescent VBS Supply Current
10
μA
μA
IQBS
60
120
CLOAD=1nF, fIN=20KHz, rms
Value
IPBS
Operating VBS Supply Current
1.0
2.8
mA
SHUNT REGULATOR SECTION
VDD and VBS Shunt Regulator Clamping
VSHUNT
ISHUNT=5mA
24
25
V
Voltage
INPUT LOGIC SECTION
VIH
VIL
IIN+
IIN-
RIN
Logic “1” Input Voltage
2.5
V
V
Logic “0” Input Voltage
0.8
70
2
VIN=5V
VIN=0V
Logic Input High Bias Current
Logic Input Low Bias Current
45
μA
μA
KΩ
70
110
Input Pull-down Resistance
GATE DRIVER OUTPUT SECTION
VOH
VOL
IO+
High Level Output Voltage (VBIAS - VO)
No Load
No Load
1.2
30
V
mV
A
Low Level Output Voltage
Output High, Short-Circuit Pulsed Current(6)
Output Low, Short-Circuit Pulsed Current(6)
V
HO=0V, VIN=5V, PW ≤10µs
HO=15V,VIN=0V, PW ≤10µs
3.0
3.0
4.0
4.0
IO-
V
A
Allowable Negative VS pin Voltage for IN
Signal Propagation to HO
VS
-9.8 -7.0
V
Note:
6
These parameters guaranteed by design.
Dynamic Electrical Characteristics
VDD=VBS=15V, GND=0V, CLOAD=1000pF, TA=25°C, unless otherwise specified.
Symbol
Parameter
Turn-on Propagation Delay Time
Turn-off Propagation Delay Time
Turn-on Rise Time
Conditions
Min. Typ. Max. Unit
ton
toff
tr
VS=0V
VS=0V
150
150
25
210
210
50
ns
ns
ns
ns
tf
Turn-off Fall Time
15
40
.
© 2008 Fairchild Semiconductor Corporation
FAN7371 Rev. 1.0.2
www.fairchildsemi.com
5
Typical Characteristics
250
200
150
100
50
250
200
150
100
50
0
-40
0
-40
-20
0
20
40
60
80
100
120
-20
0
20
40
60
80
100
120
Temperature [°C]
Temperature [°C]
Figure 5. Turn-on Propagation Delay
vs. Temperature
Figure 6. Turn-off Propagation Delay
vs. Temperature
50
40
30
20
10
0
50
40
30
20
10
0
-40
-20
0
20
40
60
80
100
120
-40
-20
0
20
40
60
80
100
120
Temperature [°C]
Temperature [°C]
Figure 7. Turn-on Rise Time vs. Temperature
Figure 8. Turn-off Fall Time vs. Temperature
100
80
60
40
20
0
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
40
60
80
100
120
-40
-20
0
20
40
60
80
100
120
Temperature [°C]
Temperature [°C]
Figure 9. Operating VDD Supply Current
vs. Temperature
Figure 10. Operating VBS Supply Current
vs. Temperature
© 2008 Fairchild Semiconductor Corporation
FAN7371 Rev. 1.0.2
www.fairchildsemi.com
6
Typical Characteristics (Continued)
9.5
9.0
8.5
8.0
7.5
10.0
9.5
9.0
8.5
8.0
-40
-20
0
20
40
60
80
100
120
-40
-20
0
20
40
60
80
100
120
Temperature [°C]
Temperature [°C]
Figure 11. VBS UVLO+ vs. Temperature
Figure 12. VBS UVLO- vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
40
60
80
100
120
-40
-20
0
20
40
60
80
100
120
Temperature [°C]
Temperature [°C]
Figure 13. Logic High Input Voltage vs. Temperature
Figure 14. Logic Low Input Voltage vs. Temperature
280
240
200
160
120
80
1.50
1.25
1.00
0.75
0.50
0.25
0.00
40
0
-40
-20
0
20
40
60
80
100
120
-40
-20
0
20
40
60
80
100
120
Temperature [°C]
Temperature [°C]
Figure 15. Input Pull-Down Resistance
vs.Temperature.
Figure 16. High-Level Output Voltage
vs. Temperature
© 2008 Fairchild Semiconductor Corporation
FAN7371 Rev. 1.0.2
www.fairchildsemi.com
7
Typical Characteristics (Continued)
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
-40
-20
0
20
40
60
80
100
120
-40
-20
0
20
40
60
80
100
120
Temperature [°C]
Temperature [°C]
Figure 17. Output High, Short-Circuit Pulsed Current
vs. Temperature
Figure 18. Output Low, Short-Circuit Pulsed Current
vs. Temperature
7
6
5
4
3
2
7
6
5
4
3
2
10
12
14
16
18
20
10
12
14
16
18
20
VBS [V]
VBS [V]
Figure 19. Output High, Short-Circuit Pulsed Current
vs. Supply Voltage
Figure 20. Output Low, Short-Circuit Pulsed Current
vs. Supply Voltage
80
120
100
60
-40°C
25°C
125°C
80
60
40
-40°C
40
25°C
125°C
20
20
0
0
10
12
14
16
18
20
10
12
14
16
18
20
Supply Voltage [V]
Supply Voltage [V]
Figure 21. Quiescent VDD Supply Current
vs. Supply Voltage
Figure 22. Quiescent VBS Supply Current
vs. Supply Voltage
© 2008 Fairchild Semiconductor Corporation
FAN7371 Rev. 1.0.2
www.fairchildsemi.com
8
Switching Time Definitions
Timing Diagram
15V
50%
50%
VDD
VB
IN
15V
10nF
10µF
10µF
0.1µF
VS
ton
tr
toff
tf
GND
IN
FAN7371
1000pF
90%
90%
HO
OUT
10%
10%
(A)
(B)
Figure 23. Switching Time Test Circuit and Waveform Definitions
© 2008 Fairchild Semiconductor Corporation
FAN7371 Rev. 1.0.2
www.fairchildsemi.com
9
Physical Dimensions
5.00
4.80
A
0.65
3.81
8
5
B
1.75
6.20
5.80
4.00
3.80
5.60
1
4
PIN ONE
INDICATOR
1.27
1.27
(0.33)
M
0.25
C B A
LAND PATTERN RECOMMENDATION
SEE DETAIL A
0.25
0.10
0.25
0.19
C
1.75 MAX
0.10
C
0.51
0.33
OPTION A - BEVEL EDGE
0.50
x 45°
GAGE PLANE
0.25
R0.10
R0.10
OPTION B - NO BEVEL EDGE
0.36
NOTES: UNLESS OTHERWISE SPECIFIED
8°
0°
A) THIS PACKAGE CONFORMS TO JEDEC
MS-012, VARIATION AA, ISSUE C,
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE MOLD
FLASH OR BURRS.
D) LANDPATTERN STANDARD: SOIC127P600X175-8M.
E) DRAWING FILENAME: M08AREV13
SEATING PLANE
0.90
(1.04)
0.406
DETAIL A
SCALE: 2:1
Figure 24. 8-Lead Small Outline Package (SOP)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions,
specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/packaging/.
© 2008 Fairchild Semiconductor Corporation
FAN7371 Rev. 1.0.2
www.fairchildsemi.com
10
© 2008 Fairchild Semiconductor Corporation
FAN7371 Rev. 1.0.2
www.fairchildsemi.com
12
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