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元器件品牌
FDB3652
[FAIRCHILD]
N-Channel PowerTrench MOSFET 100V, 61A, 16mз; N沟道PowerTrench MOSFET的100V ， 61A ， 16mз
元器件型号：
FDB3652
生产厂家：
FAIRCHILD SEMICONDUCTOR
描述和应用：
N-Channel PowerTrench MOSFET 100V, 61A, 16mз
N沟道PowerTrench MOSFET的100V ， 61A ， 16mз
PDF文件：
总11页 (文件大小：266K)
下载文档：
下载PDF数据表文档文件
型号参数：FDB3652参数
查看货源
FDB3652_08
N-Channel PowerTrench® MOSFET 100V, 61A, 16mΩ
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16
FAIRCHILD
FDB3652_F085
Power Field-Effect Transistor, 9A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT PACKAGE-3
Warning
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156
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0
FAIRCHILD
FDB3652_NL
Power Field-Effect Transistor, 9A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE PACKAGE-3
Warning
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156
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0
FAIRCHILD
FDB3672
N-Channel PowerTrench MOSFET
Warning
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156
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49
FAIRCHILD
FDB3672_09
N-Channel PowerTrench® MOSFET 100V, 44A, 28mΩ
Warning
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156
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17
FAIRCHILD
FDB3672_F085
Power Field-Effect Transistor, 7.2A I(D), 100V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT PACKAGE-3
Warning
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156
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0
FAIRCHILD
FDB3682
rDS(ON) =32m (Typ.), VGS = 10V, ID =32A Qg(tot) = 18.5nC (Typ.), VGS = 10V
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22
TYSEMI
FDB3682
N-Channel PowerTrench MOSFET
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38
KEXIN
FDB3682
N-Channel PowerTrench MOSFET 100V, 32A, 36mз
Warning
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156
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96
FAIRCHILD
FDB3682_NL
Power Field-Effect Transistor, 6A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263AB, 3 PIN
Warning
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156
-
0
FAIRCHILD
FDB-37PF
FD TYPE CONNECTOR FOR RIBBON CABLE
Warning
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156
-
4
HRS
FDB-37SF
FD TYPE CONNECTOR FOR RIBBON CABLE
Warning
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156
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7
HRS
FDB3860
N-Channel PowerTrench® MOSFET 100 V, 30 A, 37 mΩ
Warning
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156
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16
FAIRCHILD
FDB390N15A
N-Channel PowerTrench® MOSFET 150V, 27A, 39m
Warning
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on line
156
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30
FAIRCHILD
FDB4020P
P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor
Warning
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on line
156
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31
KEXIN
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