FDB8444-F085 [FAIRCHILD]
N-Channel PowerTrench® MOSFET 40V, 70A, 5.5mΩ;
| 型号： | FDB8444-F085 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | N-Channel PowerTrench® MOSFET 40V, 70A, 5.5mΩ 开关 晶体管 |
| 文件： | 总7页 (文件大小：344K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
October 2010
FDB8444_F085
®
N-Channel PowerTrench MOSFET
40V, 70A, 5.5mΩ
Features
Applications
Automotive Engine Control
Typ rDS(on) = 3.9mΩ at VGS = 10V, ID = 70A
Powertrain Management
Solenoid and Motor Drivers
Electronic Transmission
Typ Qg(TOT) = 91nC at VGS = 10V
Low Miller Charge
Low Qrr Body Diode
Distributed Power Architecture and VRMs
Primary Switch for 12V Systems
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101
RoHS Compliant
D
GATE
G
DRAIN
SOURCE
(FLANGE)
TO-263AB
S
FDB SERIES
©2010 Fairchild Semiconductor Corporation
FDB8444_F085 Rev C (W)
1
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Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
Parameter
Ratings
40
Units
Drain to Source Voltage
Gate to Source Voltage
V
V
A
± 20
Drain Current Continuous (VGS = 10V)
Pulsed
(Note 1)
(Note 2)
70
ID
Figure 4
307
EAS
PD
Single Pulse Avalanche Energy
mJ
W
W/oC
oC
Power Dissipation
Derate above 25oC
167
1.1
TJ, TSTG
Operating and Storage Temperature
-55 to +175
Thermal Characteristics
RθJC
Maximum Thermal Resistance, Junction to Case
0.9
43
oC/W
oC/W
Maximum Thermal Resistance, Junction to Ambient TO-263, lin2 cop-
per pad area
RθJA
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
800 units
FDB8444
FDB8444_F085
TO-263AB
330mm
24mm
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250μA, VGS = 0V
40
-
-
-
-
-
-
V
1
μA
μA
nA
VDS = 32V
IDSS
VGS = 0V
TJ =150°C
-
250
±100
IGSS
VGS = ±20V
-
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VDS = VGS, ID = 250μA
D = 70A, VGS = 10V
2
-
2.6
3.9
4
V
I
5.5
rDS(on)
Drain to Source On Resistance
mΩ
ID = 70A, VGS = 10V,
TJ = 175°C
-
7
9.9
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
-
-
-
-
6040
480
290
2
8035
pF
pF
pF
Ω
VDS = 25V, VGS = 0V,
f = 1MHz
Coss
Crss
Output Capacitance
640
Reverse Transfer Capacitance
Gate Resistance
435
RG
f = 1MHz
-
128
10
-
Qg(TOT)
Qg(TH)
Qgs
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
VGS = 0 to 10V
91
nC
nC
nC
nC
nC
VGS = 0 to 2V
7
VDD=20V,
I
D = 70A,
23
Qgs2
Qgd
17
-
20
-
2
www.fairchildsemi.com
FDB8444_F085 Rev C (W)
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Switching Characteristics
t(on)
td(on)
tr
Turn-On Time
-
-
-
-
-
-
-
135
ns
ns
ns
ns
ns
ns
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-Off Time
12
78
48
15
-
-
-
V
V
DD = 20V, ID = 70A
GS = 10V, RGS = 2Ω
td(off)
tf
-
-
toff
95
Drain-Source Diode Characteristics
I
SD = 70A
-
-
-
-
-
-
-
-
1.25
1.0
62
V
V
VSD
Source to Drain Diode Voltage
ISD = 35A
trr
Reverse Recovery Time
IF = 70A, di/dt = 100A/μs
IF = 70A, di/dt = 100A/μs
ns
nC
Qrr
Reverse Recovery Charge
82
Notes:
1: Maximum wire current carrying capacity is 70A.
o
2: Starting T = 25 C, L = 0.2mH, I = 56A.
J
AS
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
3
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FDB8444_F085 Rev C (W)
Typical Characteristics
100
80
60
40
20
0
1.2
1.0
0.8
0.6
0.4
0.2
0.0
CURRENT LIMITED
BY WIRE
VGS = 10V
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
TC, CASE TEMPERATURE(oC)
TC, CASE TEMPERATURE(oC)
Figure 1. Normalized Power Dissipation vs Case
Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
2
DUTY CYCLE - DESCENDING ORDER
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
x Z
x R
+ T
J
DM
θJC
θJC C
SINGLE PULSE
0.01
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 3. Normalized Maximum Transient Thermal Impedance
5000
1000
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
175 - TC
I = I25
VGS = 10V
150
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
100
10
SINGLE PULSE
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 4. Peak Current Capability
4
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FDB8444_F085 Rev C (W)
Typical Characteristics
1000
100
10
500
100
If R = 0
= (L)(I )/(1.3*RATED BV
10us
t
AV
- V
)
AS
DSS
DD
If R
≠ 0
t
AV
= (L/R)ln[(I *R)/(1.3*RATED BV
- V ) +1]
DSS DD
AS
100us
STARTING TJ = 25oC
SINGLE PULSE
TJ = MAX RATED
TC = 25oC
10
1
STARTING TJ = 150oC
1ms
1
OPERATION IN THIS
AREA MAY BE
10ms
DC
LIMITED BY r
DS(on)
0.1
0.01
0.1
1
10
100
1000
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
Figure 5. Forward Bias Safe Operating Area
140
140
PULSE DURATION = 80μs
VGS = 10V
VGS = 4.5V
VGS = 5V
DUTY CYCLE = 0.5% MAX
120
120
VDD = 5V
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
100
80
60
40
20
0
100
TJ = 175oC
80
TJ = 25oC
TJ = -55oC
60
VGS = 4V
40
20
VGS = 3.5V
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
1
2
3
4
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
2.0
14
12
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
ID = 70A
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10
8
TJ = 175oC
6
ID = 70A
4
VGS = 10V
TJ = 25oC
2
-80
-40
0
40
80
120
160
200
4
5
6
7
8
9
10
o
VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE( C)
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
5
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FDB8444_F085 Rev C (W)
Typical Characteristics
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
1.15
1.10
1.05
1.00
0.95
0.90
VGS = VDS
ID = 250μA
I
D
= 250μA
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
TJ, JUNCTION TEMPERATURE (oC)
TJ, JUNCTION TEMPERATURE(oC)
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10000
10
ID = 70A
CISS
VDD = 15V
8
6
4
2
0
VDD = 20V
VDD = 25V
COSS
1000
CRSS
f = 1MHz
VGS = 0V
100
0.1
50
0
20
40
60
80
100
1
10
Qg, GATE CHARGE(nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge vs Gate to Source Voltage
6
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FDB8444_F085 Rev C (W)
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
F-PFS™
FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
Gmax™
Power-SPM™
PowerTrench
PowerXS™
®*
®
®
SM
®
The Power Franchise
®
Programmable Active Droop™
®
QFET
QS™
Quiet Series™
TinyBoost™
TinyBuck™
TinyCalc™
GTO™
Current Transfer Logic™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
RapidConfigure™
®
™
DEUXPEED
®
TinyLogic
Dual Cool™
TINYOPTO™
TinyPower™
TinyPWM™
®
EcoSPARK
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
EfficentMax™
ESBC™
®
MicroPak™
TinyWire™
MicroPak2™
MillerDrive™
MotionMax™
Motion-SPM™
OptiHiT™
SMART START™
TriFault Detect™
TRUECURRENT™*
μSerDes™
®
SPM
®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Fairchild
®
Fairchild Semiconductor
FACT Quiet Series™
®
®
OPTOLOGIC
FACT
FAST
®
®
UHC
®
OPTOPLANAR
®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
FastvCore™
FETBench™
®
Sync-Lock™
FlashWriter
FPS™
*
PDP SPM™
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
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application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
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warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I48
7
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FDB8444_F085 Rev C (W)
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