FDC5614P_F095 [FAIRCHILD]
Transistor;
| 型号： | FDC5614P_F095 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Transistor |
| 文件： | 总5页 (文件大小：140K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
February 2002
FDC5614P
60V P-Channel Logic Level PowerTrench MOSFET
General Description
Features
This 60V P-Channel MOSFET uses Fairchild’s high
voltage PowerTrench process. It has been optimized for
power management applications.
• –3 A, –60 V.
RDS(ON) = 0.105 Ω @ VGS = –10 V
RDS(ON) = 0.135 Ω @ VGS = –4.5 V
• Fast switching speed
Applications
• High performance trench technology for extremely
low RDS(ON)
• DC-DC converters
• Load switch
• Power management
S
D
D
1
2
3
6
5
4
G
D
SuperSOT TM-6
D
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
–60
V
VGSS
ID
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
V
A
20
–3
–20
(Note 1a)
PD
Maximum Power Dissipation
(Note 1a)
(Note 1b)
1.6
0.8
W
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
30
RθJA
RθJC
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
.564
FDC5614P
7’’
8mm
3000 units
FDC5614P Rev C1 (W)
2002 Fairchild Semiconductor Corporation
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
–60
V
V
GS = 0 V, ID = –250 µA
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
ID = –250 µA, Referenced to
–49
mV/°C
25°C
IDSS
VDS = –48 V, VGS = 0 V
–1
100
–100
µA
nA
nA
IGSSF
IGSSR
VGS = 20V,
VGS = –20 V
VDS = 0 V
VDS = 0 V
On Characteristics
(Note 2)
Gate Threshold Voltage
VGS(th)
–1
–1.6
4
–3
V
V
DS = VGS, ID = –250 µA
Gate Threshold Voltage
∆VGS(th)
∆TJ
ID = –250 µA,Referenced to 25°C
mV/°C
Temperature Coefficient
RDS(on)
Static Drain–Source
On–Resistance
VGS = –10 V, ID = –3 A
82
105
135
190
mΩ
V
GS = –4.5 V, ID = –2.7 A
105
130
VGS = –10 V, ID = –3 A TJ=125°C
ID(on)
gFS
On–State Drain Current
Forward Transconductance
VGS = –10 V,
VDS = –5 V,
VDS = –5 V
ID = –3 A
–20
A
S
8
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
759
90
39
pF
pF
pF
VDS = –30 V,
f = 1.0 MHz
V GS = 0 V,
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
7
14
20
34
22
24
ns
ns
ns
VDD = –30 V,
VGS = –10 V,
ID = –1 A,
RGEN = 6 Ω
10
19
12
15
2.5
3.0
ns
Qg
Qgs
Qgd
nC
nC
nC
VDS = –30V,
ID = –3.0 A,
V
GS = –10 V
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
–1.3
–1.2
A
V
VSD
Drain–Source Diode Forward
VGS = 0 V, IS = –1.3 A (Note 2)
–0.8
Voltage
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain
pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a. 78°C/W when mounted on a 1in2 pad of 2oz copper on FR-4 board.
b. 156°C/W when mounted on a minimum pad.
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
FDC5614P Rev C1 (W)
Typical Characteristics
1.8
1.6
1.4
1.2
1
15
VGS = -10V
-6.0V
-5.0V
-4.5V
-4.0V
VGS = -3.5V
12
9
-4.0V
-3.5V
-4.5V
-5.0V
6
-6.0V
-3.0V
-7.0V
-8.0V
-10V
3
-2.5V
0.8
0
0
2
4
6
8
10
0
1
2
3
4
5
-ID, DRAIN CURRENT (A)
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.8
1.6
1.4
1.2
1
0.4
0.3
0.2
0.1
0
ID = -3.0A
GS = -10V
ID = -1.5A
V
TA = 125oC
0.8
0.6
0.4
TA = 25oC
2
4
6
8
10
-50
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
15
12
9
100
TA = -55oC
VGS = 0V
VDS = -5V
25oC
10
1
TA = 125oC
125oC
25oC
-55oC
6
0.1
0.01
3
0
0.001
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-VGS, GATE TO SOURCE VOLTAGE (V)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDC5614P Rev C1 (W)
Typical Characteristics
10
1200
1000
800
600
400
200
0
VDS = -10V
ID = -3.0A
f = 1 MHz
GS = 0 V
-20V
V
8
6
4
2
0
-30V
CISS
COSS
CRSS
0
4
8
12
16
0
10
20
30
40
50
60
Qg, GATE CHARGE (nC)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
40
30
20
10
0
SINGLE PULSE
RθJA = 156°C/W
TA = 25°C
µ
100
s
RDS(ON) LIMIT
10
1
10ms
1s
10s
VGS = -10V
SINGLE PULSE
0.1
0.01
DC
RθJA = 156oC/W
TA = 25oC
0.1
1
10
100
1000
0.1
1
10
100
t1, TIME (sec)
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) + Rθ
JA
0.2
RθJA = 156°C/W
0.1
0.1
0.05
0.02
t1
0.01
0.01
t2
SINGLE PULSE
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
FDC5614P Rev C1 (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
â
SMART START™
STAR*POWER™
Stealth™
VCX™
FAST
ACEx™
Bottomless™
CoolFET™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
FASTr™
FRFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
CROSSVOLT™
DenseTrench™
DOME™
POP™
Power247™
PowerTrenchâ
QFET™
EcoSPARK™
E2CMOSTM
TinyLogic™
QS™
EnSignaTM
TruTranslation™
UHC™
QT Optoelectronics™
Quiet Series™
SILENTSWITCHERâ
FACT™
FACT Quiet Series™
UltraFETâ
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITYARISING OUT OF THE APPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICESORSYSTEMSWITHOUTTHEEXPRESSWRITTENAPPROVALOFFAIRCHILDSEMICONDUCTORCORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
相关型号：
FDC5614P_NL
Small Signal Field-Effect Transistor, 3A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SUPERSOT-6
FAIRCHILD
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