FDD8424H_11 [FAIRCHILD]
Dual N & P-Channel PowerTrench® MOSFET N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ; 双N和P沟道MOSFET PowerTrench® N通道： 40V ， 20A ， 24mÎ © P通道： -40V ， -20A ， 54mÎ ©
| 型号： | FDD8424H_11 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Dual N & P-Channel PowerTrench® MOSFET N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ |
| 文件： | 总11页 (文件大小：856K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
October 2011
FDD8424H_F085A
tm
Dual N & P-Channel PowerTrench® MOSFET
N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ
Features
General Description
Q1: N-Channel
These dual N and P-Channel enhancement mode Power
MOSFETs are produced using Fairchild Semiconductor’s
advanced PowerTrench- process that has been especially
tailored to minimize on-state resistance and yet maintain
superior switching performance.
Max rDS(on) = 24mΩ at VGS = 10V, ID = 9.0A
Max rDS(on) = 30mΩ at VGS = 4.5V, ID = 7.0A
Q2: P-Channel
Max rDS(on) = 54mΩ at VGS = -10V, ID = -6.5A
Application
Inverter
Max rDS(on) = 70mΩ at VGS = -4.5V, ID = -5.6A
Fast switching speed
H-Bridge
Qualified to AEC Q101
RoHS Compliant
D1
D2
D1/D2
G1
G2
G2
S2
G1
S1
S1
N-Channel
S2
P-Channel
Dual DPAK 4L
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
VGS
Parameter
Q1
Q2
-40
±20
-20
-20
-6.5
-40
35
Units
Drain to Source Voltage
Gate to Source Voltage
40
±20
20
V
V
Drain Current
- Continuous (Package Limited)
- Continuous (Silicon Limited)
- Continuous
TC = 25°C
26
ID
A
TA = 25°C
9.0
55
- Pulsed
Power Dissipation for Single Operation
TC = 25°C (Note 1)
TA = 25°C (Note 1a)
TA = 25°C (Note 1b)
(Note 3)
30
PD
3.1
1.3
W
EAS
Single Pulse Avalanche Energy
29
33
mJ
°C
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case, Single Operation for Q1
Thermal Resistance, Junction to Case, Single Operation for Q2
(Note 1)
(Note 1)
4.1
3.5
°C/W
RθJC
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13”
Tape Width
12mm
Quantity
FDD8424H
FDD8424H_F085A
TO-252-4L
2500 units
1
©2011 Fairchild Semiconductor Corporation
FDD8424H_F085A Rev.B1
www.fairchildsemi.com
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units
Off Characteristics
ID = 250µA, VGS = 0V
ID = -250µA, VGS = 0V
Q1
Q2
40
-40
BVDSS
Drain to Source Breakdown Voltage
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250µA, referenced to 25°C
Q1
Q2
34
-32
mV/°C
µA
I
D = -250µA, referenced to 25°C
V
DS = 32V, VGS = 0V
Q1
Q2
1
-1
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = -32V, VGS = 0V
Q1
Q2
±100
±100
nA
nA
VGS = ±20V, VDS = 0V
On Characteristics
V
GS = VDS, ID = 250µA
Q1
Q2
1
-1
1.7
-1.6
3
-3
VGS(th)
Gate to Source Threshold Voltage
V
VGS = VDS, ID = -250µA
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250µA, referenced to 25°C
ID = -250µA, referenced to 25°C
Q1
Q2
-5.3
4.8
mV/°C
V
V
GS = 10V, ID = 9.0A
GS = 4.5V, ID = 7.0A
19
23
29
24
30
37
Q1
Q2
VGS = 10V, ID = 9.0A, TJ = 125°C
rDS(on)
Static Drain to Source On Resistance
mΩ
VGS = -10V, ID = -6.5A
VGS = -4.5V, ID = -5.6A
VGS = -10V, ID = -6.5A, TJ = 125°C
42
58
62
54
70
80
VDS = 5V, ID = 9.0A
Q1
Q2
29
13
gFS
Forward Transconductance
S
V
DS = -5V, ID = -6.5A
Dynamic Characteristics
Q1
Q2
750
1000
1000
1330
Q1
Ciss
Coss
Crss
Rg
Input Capacitance
pF
pF
pF
Ω
VDS = 20V, VGS = 0V, f = 1MHZ
Q1
Q2
115
140
155
185
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Q2
VDS = -20V, VGS = 0V, f = 1MHZ
Q1
Q2
75
75
115
115
Q1
Q2
1.1
3.3
f = 1MHz
Switching Characteristics
Q1
Q2
7
7
14
14
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
ns
ns
Q1
DD = 20V, ID = 9.0A,
VGS = 10V, RGEN = 6Ω
V
Q1
Q2
13
3
24
10
Q1
Q2
17
20
31
36
Q2
Turn-Off Delay Time
Fall Time
ns
VDD = -20V, ID = -6.5A,
VGS = -10V, RGEN = 6Ω
Q1
Q2
6
3
12
10
ns
Q1
Q2
14
17
20
24
Qg(TOT)
Qgs
Qgd
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
nC
nC
nC
Q1
VGS = 10V, VDD = 20V, ID = 9.0A
Q1
Q2
2.3
3.0
Q2
Q1
Q2
3.2
3.6
V
GS = -10V, VDD = -20V, ID = -6.5A
©2011 Fairchild Semiconductor Corporation
FDD8424H_F085A Rev.B1
2
www.fairchildsemi.com
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units
Drain-Source Diode Characteristics
VGS = 0V, IS = 9.0A
VGS = 0V, IS = -6.5A
(Note 2) Q1
(Note 2) Q2
0.87
0.88
1.2
-1.2
VSD
trr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
V
Q1
Q2
25
29
38
44
Q1
ns
nC
IF = 9.0A, di/dt = 100A/s
Q2
IF = -6.5A, di/dt = 100A/s
Q1
Q2
19
29
29
44
Qrr
Reverse Recovery Charge
Notes:
2
1. R
is determined with the device mounted on a 1in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R is determined
θCA
θJA
θJC
by the user's board design.
b. 96°C/W when mounted on a
minimum pad of 2 oz copper
a. 40°C/W when mounted on
a 1 in pad of 2 oz copper
Q1
2
Scale 1 : 1 on letter size paper
a. 40°C/W when mounted on
b. 96°C/W when mounted on a
minimum pad of 2 oz copper
Q2
2
a 1 in pad of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3. Starting T = 25°C, N-ch: L = 0.3mH, I = 14A, V = 40V, V = 10V; P-ch: L = 0.3mH, I = -15A, V = -40V, V = -10V.
J
AS
DD
GS
AS
DD
GS
©2011 Fairchild Semiconductor Corporation
FDD8424H_F085A Rev.B1
3
www.fairchildsemi.com
Typical Characteristics (Q1 N-Channel)TJ = 25°C unless otherwise noted
60
50
40
30
20
10
0
3.0
2.5
2.0
1.5
1.0
0.5
VGS = 4.0V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = 3.0V
VGS = 10V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = 4.0V
VGS = 3.5V
VGS = 4.5V
VGS = 4.5V
VGS = 3.5V
VGS = 3.0V
VGS = 10V
50
0
1
2
3
4
0
10
20
30
40
60
ID, DRAIN CURRENT(A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On- Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
1.8
1.6
1.4
1.2
1.0
0.8
0.6
50
40
30
20
10
ID = 9A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
ID = 9A
VGS = 10V
TJ = 125oC
TJ = 25oC
-75 -50 -25
0
25 50 75 100 125 150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
F i gu re 3 . N orma li zed On -Res is ta nc e
vs Junction Temperature
Figure4. On-Resistance vs Gate to
Source Voltage
60
50
40
30
20
10
0
60
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = 0V
10
1
VDS = 5V
TJ = 150oC
TJ = 25oC
0.1
TJ = 150oC
TJ = 25oC
TJ = -55oC
0.01
TJ = -55oC
0.001
0.0
0.3
0.6
0.9
1.2
1.5
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
4
©2011 Fairchild Semiconductor Corporation
FDD8424H_F085A Rev.B1
www.fairchildsemi.com
Typical Characteristics (Q1 N-Channel)TJ = 25°C unless otherwise noted
10
8
2000
1000
ID = 9A
Ciss
6
VDD = 20V
VDD = 15V
Coss
4
VDD = 25V
100
30
2
f = 1MHz
= 0V
Crss
V
GS
0
0.1
1
10
40
0
4
8
Q , GATE CHARGE(nC)
12
16
100
80
VDS, DRAIN TO SOURCE VOLTAGE (V)
g
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
30
25
20
15
10
5
30
Limited by Package
VGS = 10V
TJ = 25oC
10
TJ = 125oC
VGS = 4.5V
RθJC = 4.1oC/W
1
0.001
0
25
0.01
0.1
1
10
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
tAV, TIME IN AVALANCHE(ms)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
F i g u r e 1 0 . M a x i m u m C o n t i n u o u s D r a i n
Current vs CaseTemperature
100
10
1
10000
10us
FOR TEMPERATURES
o
VGS = 10V
ABOVE 25 C DERATE PEAK
CURRENT AS FOLLOWS:
100us
1000
100
10
150 – T
C
I = I
-----------------------
25
125
THIS AREA IS
LIMITED BY rDS(on)
TC = 25oC
SINGLE PULSE
1ms
T
J = MAX RATED
θJC = 4.1oC/W
TC = 25oC
10ms
DC
SINGLE PULSE
θJC = 4.1oC/W
R
R
0.1
10-5
10-4
10-3
t, PULSE WIDTH (s)
10-2
10-1
100
101
1
10
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
Figure12. Si n g l e P u l s e M a x i m u m
Power Dissipation
©2011 Fairchild Semiconductor Corporation
FDD8424H_F085A Rev.B1
5
www.fairchildsemi.com
Typical Characteristics (Q1 N-Channel)TJ = 25°C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
SINGLE PULSE
RθJC = 4.1oC/W
0.01
PEAK T = P
J
x Z
x R
+ T
DM
θJC
θJC C
0.005
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
6
©2011 Fairchild Semiconductor Corporation
FDD8424H_F085A Rev.B1
www.fairchildsemi.com
Typical Characteristics (Q2 P-Channel)TJ = 25°C unless otherwise noted
3.0
2.5
2.0
1.5
1.0
0.5
40
30
20
10
0
VGS = -3V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = -10V
VGS = -3.5V
VGS = -4.5V
VGS = -4V
VGS = -4V
VGS = -4.5V
VGS = -3.5V
VGS = -3V
VGS = -10V
0
10
20
30
40
0
1
2
3
4
-VDS, DRAIN TO SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT(A)
Figure 14. On- Region Characteristics
Figure 15. Normalized on-Resistance vs Drain
Current and Gate Voltage
1.6
160
ID = -6.5A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = -10V
1.4
1.2
1.0
0.8
0.6
120
ID = -6.5A
TJ = 125oC
80
40
TJ = 25oC
0
-75 -50 -25
0
25 50 75 100 125 150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 17. On-Resistance vs Gate to
Source Voltage
Figure 16. Normalized On-Resistance
vs Junction Temperature
40
40
10
VGS = 0V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
30
20
10
0
VDS = -5V
1
0.1
TJ = 25oC
TJ = 150oC
TJ = 25oC
TJ = -55oC
0.01
0.001
TJ = 150oC
TJ = -55oC
0.0
0.3
0.6
0.9
1.2
1.5
1
2
3
4
5
-VSD, BODY DIODE FORWARD VOLTAGE (V)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 18. Transfer Characteristics
Figure 19. Source to Drain Diode
Forward Voltage vs Source Current
©2011 Fairchild Semiconductor Corporation
FDD8424H_F085A Rev.B1
8
www.fairchildsemi.com
Typical Characteristics (Q2 P-Channel)TJ = 25°C unless otherwise noted
10
2000
1000
Ciss
ID = -6.5A
8
VDD = -15V
Coss
VDD = -20V
VDD = -25V
6
4
Crss
100
30
2
f = 1MHz
= 0V
V
GS
0
40
0.1
1
10
0
4
8
12
16
20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE(nC)
g
Figure 21. Capacitance vs Drain
to Source Voltage
Figure 20. Gate Charge Characteristics
25
20
15
10
5
30
10
TJ = 25oC
VGS = -10V
TJ = 125oC
VGS = -4.5V
R
θJC = 3.5oC/W
1
0.001
0
0.01
0.1
1
10
100
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
tAV, TIME IN AVALANCHE(ms)
Figure 22. Unclamped Inductive
Switching Capability
Fi gu re 23. Max imu m Co nti nu ou s Dr ain
Current vs Case Temperature
10
10
1
10000
VGS = -10V
10us
FOR TEMPERATURES
o
ABOVE 25 C DERATE PEAK
100us
CURRENT AS FOLLOWS:
1000
100
10
150 – T
C
I = I
-----------------------
25
THIS AREA IS
LIMITED BY rds(on)
125
TC = 25oC
1ms
SINGLE PULSE
TJ = MAX RATED
10ms
R
θJC = 3.5oC/W
C = 25oC
SINGLE PULSE
RθJC = 3.5oC/W
DC
T
0.1
10-5 10-4 10-3 10-2 10-1 100 101 102 103
t, PULSE WIDTH (s)
80
1
10
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure24. Forward Bias Safe
Operating Area
Figure 25. Single Pulse Maximum
Power Dissipation
9
©2011 Fairchild Semiconductor Corporation
FDD8424H_F085A Rev.B1
www.fairchildsemi.com
Typical Characteristics (Q2 P-Channel)TJ = 25°C unless otherwise noted
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
P
DM
0.05
0.02
0.01
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
x Z
x R
+ T
SINGLE PULSE
J
DM
θJC
θJC C
0.01
R
θJC = 3.5oC/W
0.005
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION (s)
Figure 26. Transient Thermal Response Curve
10
©2011 Fairchild Semiconductor Corporation
FDD8424H_F085A Rev.B1
www.fairchildsemi.com
11
©2011 Fairchild Semiconductor Corporation
FDD8424H_F085A Rev.B1
www.fairchildsemi.com
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intended to be an exhaustive list of all such trademarks.
®
®
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*
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PowerXS™
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AX-CAP™*
The Right Technology for Your Success™
®
®
F-PFS™
®
FRFET
®
SM
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Green FPS™
Green FPS™ e-Series™
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Programmable Active Droop™
TinyBoost™
TinyBuck™
TinyCalc™
®
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED
Dual Cool™
EcoSPARK
QFET
QS™
Quiet Series™
RapidConfigure™
™
®
TinyLogic
GTO™
TINYOPTO™
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IntelliMAX™
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®
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
®
TranSiC
®
TriFault Detect™
TRUECURRENT *
EfficentMax™
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MicroPak™
SMART START™
®
®
MicroPak2™
MillerDrive™
MotionMax™
Motion-SPM™
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tm
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Rev. I55
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FDD8424H_F085A Rev.B1
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