FDD86540 [FAIRCHILD]
N-Channel PowerTrench® MOSFET 60 V, 50 A, 4.1 mΩ; N沟道MOSFET PowerTrench® 60 V， 50 A ， 4.1英里©
| 型号： | FDD86540 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | N-Channel PowerTrench® MOSFET 60 V, 50 A, 4.1 mΩ |
| 文件： | 总6页 (文件大小：247K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
February 2012
FDD86540
N-Channel PowerTrench® MOSFET
60 V, 50 A, 4.1 mΩ
Features
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low rDS(on), fast switching speed and body
diode reverse recovery performance.
Max rDS(on) = 4.1 mΩ at VGS = 10 V, ID = 21.5 A
Max rDS(on) = 5 mΩ at VGS = 8 V, ID = 19.5 A
100% UIL tested
RoHS Compliant
Applications
Primary Switch in isolated DC-DC
Synchronous Rectifier
Load Switch
D
D
G
G
S
D-PAK
(TO-252)
S
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
60
Units
Drain to Source Voltage
Gate to Source Voltage
V
V
±20
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
TC = 25 °C
TC = 25 °C
TA = 25 °C
50
136
ID
A
(Note 1a)
(Note 3)
21.5
120
-Pulsed
EAS
Single Pulse Avalanche Energy
Power Dissipation
228
mJ
W
TC = 25 °C
TA = 25 °C
127
PD
Power Dissipation
(Note 1a)
3.1
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
0.98
40
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13 ’’
Tape Width
12 mm
Quantity
FDD86540
FDD86540
D-PAK(TO-252)
2500 units
1
©2012 Fairchild Semiconductor Corporation
FDD86540 Rev. C
www.fairchildsemi.com
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
60
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
I
D = 250 μA, referenced to 25 °C
28
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = 48 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
1
μA
±100
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
2
3.1
-11
4
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
I
D = 250 μA, referenced to 25 °C
mV/°C
V
GS = 10 V, ID = 21.5 A
3.4
4.1
5.2
75
4.1
5
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
VGS = 8 V, ID = 19.5 A
mΩ
VGS = 10 V, ID = 21.5 A, TJ = 125 °C
VDS = 10 V, ID = 21.5 A
6.3
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
4767
1409
48
6340
1880
90
pF
pF
pF
Ω
VDS = 30 V, VGS = 0 V,
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
0.6
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
26
15
31
6.9
65
54
23
12
42
28
49
14
90
75
ns
ns
VDD = 30 V, ID = 21.5 A,
V
GS = 10 V, RGEN = 6 Ω
Turn-Off Delay Time
Fall Time
ns
ns
Qg
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VGS = 0 V to 10 V
VGS = 0 V to 8 V
nC
nC
nC
nC
Qg
VDD = 30 V,
D = 21.5 A
I
Qgs
Qgd
Drain-Source Diode Characteristics
V
GS = 0 V, IS = 21.5 A
(Note 2)
(Note 2)
0.8
0.7
56
1.3
1.2
90
V
V
VSD
Source-Drain Diode Forward Voltage
VGS = 0 V, IS = 2.6 A
trr
Reverse Recovery Time
ns
nC
IF = 21.5 A, di/dt = 100 A/μs
Qrr
Reverse Recovery Charge
43
69
Notes:
1: R
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
θJA
θJC
is guaranteed by design while R
is determined by the user’s board design.
θJA
b) 96 °C/W when mounted on
a minimum pad
a) 40 °C/W when mounted on a
1 in pad of 2 oz copper
2
2: Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3: Starting T = 25 °C, L = 0.3 mH, I = 39 A, V = 54 V, V = 10 V.
J
AS
DD
GS
©2012 Fairchild Semiconductor Corporation
FDD86540 Rev. C
2
www.fairchildsemi.com
Typical Characteristics TJ = 25 °C unless otherwise noted
8
6
4
2
0
120
V
= 10 V
= 8 V
GS
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
V
= 6 V
GS
V
VGS = 5 V
GS
90
60
30
0
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 5.5 V
VGS = 6 V
V
= 5.5 V
GS
VGS = 8 V
V
= 5 V
VGS = 10 V
GS
0
1
2
3
4
5
0
30
60
90
120
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
20
1.7
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
ID = 21.5 A
VGS = 10 V
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
ID = 21.5 A
15
10
5
TJ = 125 o
C
TJ = 25 o
C
0
-75 -50 -25
0
25 50 75 100 125 150
4
5
6
7
8
9
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
F i gu re 3 . N orma li zed On - Res is ta nc e
vs Junction Temperature
Figure4. On-Resistance vs Gate to
Source Voltage
120
200
100
VGS = 0 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
10
90
60
30
0
VDS = 5 V
TJ = 150 o
C
1
TJ = 25 oC
TJ = 150 o
C
0.1
TJ = 25 o
C
TJ = -55 o
C
0.01
TJ = -55 o
C
0.001
2
3
4
5
6
7
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
©2012 Fairchild Semiconductor Corporation
FDD86540 Rev. C
3
www.fairchildsemi.com
Typical Characteristics TJ = 25 °C unless otherwise noted
10
10000
1000
100
Ciss
VDD = 20 V
ID = 21.5 A
8
VDD = 30 V
Coss
6
VDD = 40 V
4
2
0
Crss
f = 1 MHz
GS = 0 V
V
10
0.1
0
10
20
30
40
50
60
70
1
10
60
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
140
120
100
80
100
RθJC = 0.98 oC/W
VGS = 10 V
VGS = 8 V
TJ = 25 oC
10
60
TJ = 100 oC
40
TJ = 125 o
C
Limited by Package
50
20
0
1
0.01
25
75
100
125
150
0.1
1
10
100 300
TC, CASE TEMPERATURE (oC)
tAV, TIME IN AVALANCHE (ms)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure10. Maximum Continuous Drain
Current vs Case Temperature
10000
200
100
SINGLE PULSE
RθJC = 0.98 oC/W
T
C = 25 oC
10
1
100 μs
THIS AREA IS
LIMITED BY rDS(on)
1000
100
1 ms
SINGLE PULSE
TJ = MAX RATED
10 ms
DC
R
θJC = 0.98 oC/W
TC = 25 oC
0.1
0.1
10-6
10-5
10-4
10-3
10-2
10-1
1
1
10
100 200
t, PULSE WIDTH (sec)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
Figure 12. Single Pulse Maximum
Power Dissipation
©2012 Fairchild Semiconductor Corporation
FDD86540 Rev. C
4
www.fairchildsemi.com
Typical Characteristics TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
P
DM
0.1
0.05
t
0.1
0.02
0.01
1
t
2
NOTES:
DUTY FACTOR: D = t /t
SINGLE PULSE
RθJC = 0.98 oC/W
1
2
PEAK T = P
x Z
x R
+ T
θJC C
J
DM
θJC
0.01
10-6
10-5
10-4
10-3
10-2
10-1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Case Transient Thermal Response Curve
©2012 Fairchild Semiconductor Corporation
FDD86540 Rev. C
5
www.fairchildsemi.com
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®
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Quiet Series™
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™
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TinyLogic
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®
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TRUECURRENT *
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SPM
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MicroPak2™
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®*
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Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
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First Production
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Full Production
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Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I61
www.fairchildsemi.com
6
©2012 Fairchild Semiconductor Corporation
FDD86540 Rev. C
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