FDM2452NZ_NL [FAIRCHILD]
Small Signal Field-Effect Transistor, 8.1A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 2 X 5 MM, LEAD FREE, MLP-6;
| 型号： | FDM2452NZ_NL |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Small Signal Field-Effect Transistor, 8.1A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 2 X 5 MM, LEAD FREE, MLP-6 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：137K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
July 2005
FDM2452NZ
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench®
MOSFET
General Description
Features
This dual N-Channel MOSFET has been designed
using Fairchild Semiconductor’s advanced Power
Trench process to optimize the RDS(ON) @ VGS = 2.5v on
special MicroFET lead frame with all the drains on one
side of the package.
• 8.1 A, 30 V
RDS(ON) = 21 mΩ @ VGS = 4.5 V
DS(ON) = 25 mΩ @ VGS = 2.5 V
R
• ESD protection Diode(note 3)
Applications
• Low Profile – 0.8 mm maximum – in the new
package MicroFET 2 x 5 mm
• Li-Ion Battery Pack
PIN 1
Bottom Drain Contact
Q2
S1 S1 G1
4
3
G2
S2
S2
G1
S1
S1
5
6
2
1
Q1
S2 S2 G2
MLP 2x5
Bottom Drain Contact
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
Parameter
Ratings
Units
Drain-Source Voltage
30
V
V
A
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
±12
8.1
30
ID
(Note 1a)
PD
Power Dissipation (Steady State)
(Note 1a)
(Note 1b)
2.2
0.8
W
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
55
RθJA
RθJA
°C/W
145
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
2452Z
FDM2452NZ
13’’
12mm
3000 units
FDM2452NZ Rev C1
©2005 Fairchild Semiconductor Corporation
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown
30
V
VGS = 0 V,
ID = 250 µA
Voltage
Breakdown Voltage Temperature
Coefficient
24
∆BVDSS
∆TJ
ID = 250 µA, Referenced to 25°C
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current VDS = 24 V,
VGS = 0 V
1
µA
µA
Gate–Body Leakage,
VGS = ±12 V, VDS = 0 V
±10
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
0.55
0.8
–3
1.5
V
VDS = VGS
ID = 250 µA, Referenced to 25 C
,
ID = 250 µA
Gate Threshold Voltage
Temperature Coefficient
∆VGS(th)
∆TJ
mV/°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = 4.5 V,
VGS = 4.0 V,
VGS = 3.1 V,
VGS = 2.5 V,
ID = 8.1 A
ID = 8.0 A
ID = 7.7 A
ID = 7.4 A
13.6
13.9 21.5
14.6
15.7
19
21
mΩ
23
25
31
VGS = 4.5 V, ID = 8.1 A, TJ=125°C
gFS
Forward Transconductance
VDS = 5 V,
ID =8.1 A
46
S
Dynamic Characteristics
Ciss
Input Capacitance
980
160
pF
pF
pF
Ω
V
DS = 15 V,
V GS = 0 V,
Coss
Output Capacitance
f = 1.0 MHz
Crss
RG
Reverse Transfer Capacitance
Gate Resistance
110
1.8
V GS = 0 V,
f = 1.0 MHz
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
9
18
20
48
17
19
ns
ns
V
DD = 15 V,
ID = 1 A,
RGEN = 6 Ω
VGS = 4.5 V,
10
30
8.7
14
1.8
3.8
ns
ns
Qg
Qgs
Qgd
nC
nC
nC
VDS = 15 V,
VGS = 4.5 V
ID = 8.1 A,
Drain–Source Diode Characteristics
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 1.8 A
(Note 2)
0.7
1.2
V
trr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
IF = 8.1 A,
dIF/dt = 100 A/µs
15
4
nS
nC
Qrr
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a)
55°C/W when
b) 145°C/W when mounted on a
minimum pad of 2 oz copper
Scale 1 : 1 on letter size paper
mounted on a 1in2 pad
of 2 oz copper
2. Pulse Test: Pulse Width < 300µs,
Duty Cycle < 2.0%
3. The diode connected between the gate
and source serves only as protection
againts ESD. No gate overvoltage
rating is implied.
FDM2452NZ Rev C1
Typical Characteristics
40
1.5
1.4
1.3
1.2
1.1
1
2.5V
VGS = 4.5V
3.5V
35
30
25
20
15
10
5
2.0V
VGS = 2.0V
3.0V
2.5V
3.0V
3.5V
4.0V
30
4.5V
35
1.5V
0.9
0
0
5
10
15
20
25
40
0
0.5
1
1.5
2
2.5
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.04
1.6
1.4
1.2
1
ID = 8.1A
ID = 4.0A
V
GS = 4.5V
0.035
0.03
TA = 125oC
0.025
0.02
0.8
0.6
0.015
0.01
TA = 25oC
-50
-25
0
25
50
75
100
125
150
1
2
3
4
5
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
40
25oC
VDS = 5V
VGS = 0V
10
35
30
25
20
15
10
5
TA = -55oC
TA = 125oC
125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
0
0
0.2
0.4
0.6
0.8
1
1.2
0.5
1
1.5
2
2.5
V
SD, BODY DIODE FORWARD VOLTAGE (V)
V
GS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDM2452NZ Rev C1
Typical Characteristics
5
1600
1400
1200
1000
800
600
400
200
0
ID = 8.1A
f = 1MHz
VGS = 0 V
VDS = 10V
15V
4
3
2
1
0
20V
Ciss
Coss
Crss
0
4
8
12
16
0
5
10
15
20
25
30
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
50
40
30
20
10
0
SINGLE PULSE
RθJA = 145°C/W
RDS(ON) LIMIT
100us
T
A = 25°C
10
1
1ms
10ms
100ms
1s
10s
DC
VGS = 4.5V
SINGLE PULSE
RθJA = 145oC/W
TA = 25oC
0.1
0.01
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
t1, TIME (sec)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * RθJA
RθJA =145 °C/W
0.2
P(pk)
0.1
0.1
t1
0.05
0.02
t2
J - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
T
0.01
SINGLE PULSE
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDM2452NZ Rev C1
Dimensional Outline and Pad Layout
FDM2452NZ Rev C1
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
®
ACEx™
PowerSaver™
SuperSOT™-8
SyncFET™
TinyLogic
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
FAST
®
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
PowerTrench
FASTr™
FPS™
FRFET™
GlobalOptoisolator™
GTO™
®
®
QFET
QS™
TINYOPTO™
TruTranslation™
UHC™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
μSerDes™
SILENT SWITCHER
SMART START™
SPM™
®
UltraFET
HiSeC™
I2C™
UniFET™
VCX™
Wire™
MSXPro™
OCX™
i-Lo™
ImpliedDisconnect™
IntelliMAX™
®
OCXPro™
OPTOLOGIC
®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
FACT Quiet Series™
Stealth™
Across the board. Around the world.™
SuperFET™
SuperSOT™-3
SuperSOT™-6
®
The Power Franchise
Programmable Active Droop™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVESTHE RIGHTTO MAKE CHANGES WITHOUTFURTHER NOTICETOANY
PRODUCTS HEREINTO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUMEANYLIABILITY
ARISING OUTOFTHEAPPLICATION OR USE OFANYPRODUCTOR CIRCUITDESCRIBED HEREIN; NEITHER DOES IT
CONVEYANYLICENSE UNDER ITS PATENTRIGHTS, NORTHE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I16
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