FDP15N65 [FAIRCHILD]
650V N-Channel MOSFET; 650V N沟道MOSFET
| 型号： | FDP15N65 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 650V N-Channel MOSFET |
| 文件： | 总10页 (文件大小：1350K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
February 2006
TM
UniFET
FDP15N65 / FDPF15N65
650V N-Channel MOSFET
Features
Description
•
•
•
•
•
•
15A, 650V, RDS(on) = 0.44Ω @VGS = 10 V
Low gate charge ( typical 48.5 nC)
Low Crss ( typical 23.6 pF)
Fast switching
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
100% avalanche tested
Improved dv/dt capability
D
G
TO-220
FDP Series
TO-220F
FDPF Series
G D
S
G
D S
S
Absolute Maximum Ratings
Symbol
Parameter
FDP15N65 FDPF15N65
Unit
VDSS
Drain-Source Voltage
Drain Current
650
V
ID
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
15
9.5
15*
9.5*
A
A
(Note 1)
(Note 2)
IDM
Drain Current
- Pulsed
A
60
60*
VGSS
EAS
IAR
Gate-Source voltage
± 30
637
15
V
mJ
A
Single Pulsed Avalanche Energy
Avalanche Current
(Note 1)
(Note 1)
(Note 3)
EAR
dv/dt
PD
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
25.0
4.5
mJ
V/ns
Power Dissipation
(TC = 25°C)
- Derate above 25°C
250
2.0
73.5
0.59
W
W/°C
TJ, TSTG
TL
Operating and Storage Temperature Range
-55 to +150
300
°C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
°C
* Drain current limited by maximum junction termperature.
Thermal Characteristics
Symbol
Parameter
FDP15N65 FDPF15N65
Unit
°C/W
°C/W
°C/W
RθJC
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
0.5
0.5
1.7
--
RθCS
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
©2006 Fairchild Semiconductor Corporation
FDP15N65 / FDPF15N65 Rev. A
1
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Package Marking and Ordering Information
Device Marking
FDP15N65
Device
FDP15N65
FDPF15N65
Package
TO-220
Reel Size
Tape Width
Quantity
--
--
--
--
50
50
FDPF15N65
TO-220F
Electrical Characteristics
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Conditions
Min
Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA, TJ = 25°C
ID = 250µA, Referenced to 25°C
650
--
--
--
--
V
∆BVDSS
Breakdown Voltage Temperature
Coefficient
0.65
V/°C
/
∆TJ
IDSS
Zero Gate Voltage Drain Current
VDS = 650V, VGS = 0V
VDS = 520V, TC = 125°C
--
--
--
--
1
10
µA
µA
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
--
--
--
--
100
nA
nA
-100
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
VDS = VGS, ID = 250µA
VGS = 10V, ID = 7.5A
VDS = 40V, ID = 7.5A
3.0
--
--
5.0
0.44
--
V
Ω
S
Static Drain-Source
On-Resistance
0.36
19.2
(Note 4)
gFS
Forward Transconductance
--
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
--
--
2380
295
3095
385
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
23.6
35.5
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
VDD = 325V, ID = 15A
RG = 21.7Ω
--
--
--
--
--
--
--
65
140
260
220
140
63.0
--
ns
ns
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
125
105
65
ns
(Note 4, 5)
ns
Qg
VDS = 520V, ID = 15A
VGS = 10V
48.5
14.0
21.2
nC
nC
nC
Qgs
Qgd
--
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
--
--
--
15
60
1.4
--
A
A
ISM
VSD
trr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, IS = 15A
--
V
VGS = 0V, IS = 15A
496
5.69
ns
µC
dIF/dt =100A/µs
(Note 4)
Qrr
Reverse Recovery Charge
--
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 5.23mH, I = 15A, V = 50V, R = 25Ω, Starting T = 25°C
AS
DD
G
J
3. I ≤ 15A, di/dt ≤ 200A/µs, V ≤ BV
, Starting T = 25°C
SD
DD
DSS
J
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
2
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FDP15N65 / FDPF15N65 Rev. A
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
101
100
10-1
Bottom : 5.5 V
101
150oC
25oC
-55oC
※ Notes :
1. VDS = 40V
2. 250µ s Pulse Test
※ Notes :
1. 250µ s Pulse Test
2. TC = 25℃
100
2
4
6
8
10
12
10-1
100
101
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
1.0
0.8
0.6
0.4
0.2
0.0
VGS = 10V
101
150℃
25℃
VGS = 20V
※ Notes :
1. VGS = 0V
2. 250µ s Pulse Test
※ Note : T = 25℃
J
100
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
10
20
30
40
50
VSD, Source-Drain voltage [V]
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
12
10
8
5000
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
VDS = 130V
Coss
4000
3000
2000
1000
0
VDS = 325V
VDS = 520V
C
iss
6
4
※ Note ;
1. VGS = 0 V
2. f = 1 MHz
Crss
2
※ Note : ID = 15A
0
10-1
100
101
0
10
20
30
40
50
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
3
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FDP15N65 / FDPF15N65 Rev. A
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.2
3.0
2.5
1.1
1.0
0.9
0.8
2.0
1.5
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 µ A
※ Notes :
1. V = 10 V
GS
0.5
2. ID = 7.5 A
0.0
-100
-50
0
50
100
150
200
-100
-50
50
100
150
200
0
TJ, Junction Temperature [oC]
o
TJ,Junction Temperature [ C]
Figure 9-1. Safe Operating Area for FDP15N65 Figure 9-2. Safe Operating Area for FDPF15N65
102
101
100
10-1
10-2
102
101
100
10-1
10-2
10 µs
100 µs
1 ms
10 ms
10 µs
100 µs
1 ms
10 ms
100 ms
DC
100 ms
DC
Operation in This Area
is Limited by R DS(on)
Operation in This Area
is Limited by R DS(on)
※ Notes :
※ Notes :
1. TC = 25 o
C
1. TC = 25 o
C
2. TJ = 150 o
C
2. TJ = 150 o
C
3. Single Pulse
3. Single Pulse
100
101
102
103
100
101
102
103
VDS, Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current vs. Case Temperature
18
15
12
9
6
3
0
25
50
75
100
125
150
TC, Case Temperature [℃]
4
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FDP15N65 / FDPF15N65 Rev. A
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for FDP15N65
100
D =0.5
0.2
10-1
0.1
0.05
0.02
※
N otes
:
0.01
1. (t)
Z
=
0.5 ℃ /W M ax.
2. D uty Factor, t1/t2
3. T JM T C ZqJC (t)
PDθMJC
10-2
D
=
single pulse
-
=
P
t1
*
D M
t2
10-5
10-4
10-3
10-2
10-1
100
101
t1, S quare W ave P ulse D uration [sec]
Figure 11-2. Transient Thermal Response Curve for FDPF15N65
10 0
D = 0.5
0.2
0.1
1 0-1
0.05
0.02
0.01
※
N o te s :
1 . ZP (t)
=
1.7 ℃ /W M ax.
2 . D uty F acto r, t1/t2
3 . T JM T C Z q JC (t)
θ JDCM
1 0-2
D
=
single pulse
-
=
P t
*
D1Mt2
1 0-5
10 -4
10-3
10-2
10 -1
1 00
10 1
t1 , S q uare W ave P ulse D uration [sec]
5
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FDP15N65 / FDPF15N65 Rev. A
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
6
www.fairchildsemi.com
FDP15N65 / FDPF15N65 Rev. A
Peak Diode Recovery dv/dt Test Circuit & Waveforms
7
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FDP15N65 / FDPF15N65 Rev. A
Mechanical Dimensions
TO-220
4.50 0.20
+0.10
9.90 0.20
(8.70)
1.30
ø3.60 0.10
–0.05
1.27 0.10
1.52 0.10
0.80 0.10
+0.10
–0.05
0.50
2.40 0.20
2.54TYP
2.54TYP
[2.54 0.20]
[2.54 0.20]
10.00 0.20
Dimensions in Millimeters
8
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FDP15N65 / FDPF15N65 Rev. A
Mechanical Dimensions (Continued)
TO-220F
2.54 0.20
(0.70)
10.16 0.20
(7.00)
ø3.18 0.10
(1.00x45°)
MAX1.47
0.80 0.10
#1
0.35 0.10
+0.10
–0.05
0.50
2.76 0.20
2.54TYP
2.54TYP
[2.54 0.20]
[2.54 0.20]
9.40 0.20
Dimensions in Millimeters
9
www.fairchildsemi.com
FDP15N65 / FDPF15N65 Rev. A
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I17
10
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FDP15N65 / FDPF15N65 Rev. A
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