FDPF045N10A [FAIRCHILD]
N-Channel PowerTrench® MOSFET 100V, 67A, 4.5m; N沟道MOSFET PowerTrench® 100V ， 67A ， 4.5米？
| 型号： | FDPF045N10A |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | N-Channel PowerTrench® MOSFET 100V, 67A, 4.5m |
| 文件： | 总9页 (文件大小：669K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
August 2011
FDPF045N10A
N-Channel PowerTrench MOSFET
100V, 67A, 4.5mꢀ
®
Features
Description
•
•
•
•
R
= 3.7mꢀ ( Typ.)@ V = 10V, I = 67A
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advance PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
DS(on)
GS
D
Fast Switching Speed
Low Gate Charge
High Performance Trench Technology for Extremely Low
R
DS(on)
Application
•
•
High Power and Current Handling Capability
RoHS Compliant
•
•
•
•
•
DC to DC Converters
Synchronous Rectification for Telecommunication PSU
Battery Charger
AC motor drives and Uninterruptible Power Supplies
Off-line UPS
D
G
TO-220F
(Retractable)
G D S
S
o
MOSFET Maximum Ratings T = 25 C unless otherwise noted*
C
Symbol
Parameter
Ratings
100
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
V
V
DSS
GSS
±20
o
- Continuous (T = 25 C)
67
C
I
I
Drain Current
A
D
o
- Continuous (T = 100 C)
47
C
Drain Current
- Pulsed
(Note 1)
(Note 2)
(Note 3)
268
A
mJ
V/ns
W
DM
E
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
637
AS
dv/dt
6.0
o
(T = 25 C)
43
C
P
Power Dissipation
D
o
o
- Derate above 25 C
0.29
-55 to +175
W/ C
o
T , T
Operating and Storage Temperature Range
C
J
STG
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
o
T
300
C
L
Thermal Characteristics
Symbol
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Units
Ratings
3.5
R
R
θJC
θJA
o
C/W
62.5
©2011 Fairchild Semiconductor Corporation
FDPF045N10A Rev. C0
1
www.fairchildsemi.com
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDPF045N10A
FDPF045N10A
TO-220F
-
-
50
o
Electrical Characteristics T = 25 C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
Drain to Source Breakdown Voltage
I
I
= 250ꢁA, V = 0V
100
-
-
-
-
V
DSS
D
D
GS
ꢂBV
ꢂT
Breakdown Voltage Temperature
Coefficient
o
o
DSS
= 250ꢁA, Referenced to 25 C
0.06
V/ C
J
V
V
V
= 80V, V = 0V
-
-
-
-
-
-
1
DS
DS
GS
GS
I
I
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
ꢁA
DSS
GSS
o
= 80V, T = 150 C
500
±100
C
= ±20V, V = 0V
nA
DS
On Characteristics
V
Gate Threshold Voltage
V
V
V
= V , I = 250ꢁA
2.0
-
-
4.0
4.5
-
V
mꢀ
S
GS(th)
GS
GS
DS
DS
D
R
g
Static Drain to Source On Resistance
Forward Transconductance
= 10V, I = 67A
3.7
127
DS(on)
D
= 10V, I = 67A
(Note 4)
-
D
FS
Dynamic Characteristics
C
C
C
C
Input Capacitance
-
-
-
-
-
-
-
-
3961
925
34
5270
pF
pF
pF
pF
nC
nC
nC
nC
iss
V
= 50V, V = 0V
GS
DS
Output Capacitance
1230
oss
rss
oss
f = 1MHz
Reverse Transfer Capacitance
Engry Releted Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
-
-
(er)
V
= 50V, V = 0V
1521
57
DS
GS
Q
Q
Q
Q
74
-
g(tot)
17
V
I
= 10V, V = 50V
gs
GS
DS
= 100A
8
-
D
gs2
gd
13
-
Switching Characteristics
t
t
t
t
Turn-On Delay Time
-
-
-
-
-
23
26
50
15
1.9
56
62
110
40
-
ns
ns
ns
ns
ꢀ
d(on)
V
V
= 50V, I = 100A
D
Turn-On Rise Time
DD
GS
r
= 10V, R
= 4.7ꢀ
GEN
Turn-Off Delay Time
d(off)
f
Turn-Off Fall Time
(Note 4, 5)
ESR
Equivalent Series Resistance (G-S)
Drain Open, f = 1MHz
Drain-Source Diode Characteristics
I
I
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
-
-
-
67
268
1.3
-
A
A
S
SM
V
t
Drain to Source Diode Forward Voltage
Reverse Recovery Time
V
= 0V, I = 67A
-
V
SD
GS
SD
75
120
ns
nC
V
= 0V, V = 50V, I = 100A
rr
GS
DD
SD
dI /dt = 100A/ꢁs
(Note 4)
Q
Reverse Recovery Charge
-
F
rr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 3mH, I = 20.6A, R = 25ꢀ, Starting T = 25°C
AS
G
J
3. I ≤ꢃ100A, di/dt ≤ 200A/ꢁs, V ≤ BV
, Starting T = 25°C
SD
DD
DSS
J
4. Pulse Test: Pulse width ≤ 300ꢁs, Dual Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
www.fairchildsemi.com
FDPF045N10A Rev. C0
2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
500
500
*Notes:
VGS = 15.0V
1. VDS = 10V
10.0V
8.0V
6.5V
6.0V
5.5V
2. 250ꢁs Pulse Test
100
10
1
5.0V
100
175oC
25oC
-55oC
*Notes:
1. 250ꢁs Pulse Test
2. TC = 25oC
10
0.1
1
2
1
2
3
4
5
6
VDS, Drain-Source Voltage[V]
VGS, Gate-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Drain Current and Gate Voltage
4.5
4.0
3.5
3.0
500
VGS = 10V
100
10
1
175oC
25oC
VGS = 20V
*Notes:
1. VGS = 0V
*Note: TC = 25oC
2. 250ꢁs Pulse Test
0
100
200
300
400
0.0
0.3
0.6
0.9
1.2
1.5
ID, Drain Current [A]
VSD, Body Diode Forward Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10000
10
Ciss
VDS = 20V
VDS = 50V
VDS = 80V
8
6
4
2
0
1000
Coss
Crss
*Note:
1. VGS = 0V
2. f = 1MHz
100
10
C
iss
= C + C (C = shorted)
gs gd ds
C
oss
= C + C
ds
gd
C
rss
= C
gd
*Note: ID = 100A
40 50
0.1
1
10
100
0
10
20
30
60
Qg, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
www.fairchildsemi.com
FDPF045N10A Rev. C0
3
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.10
1.05
1.00
2.5
2.0
1.5
1.0
0.5
0.0
0.95
*Notes:
1. VGS = 0V
*Notes:
1. VGS = 10V
2. ID = 250ꢁA
2. ID = 67A
0.90
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
vs. Case Temperature
Figure 10. Maximum Drain Current
500
75
VGS = 10V
100
10
100ꢁs
60
45
30
15
0
1ms
10ms
100ms
DC
Operation in This Area
is Limited by R DS(on)
1
0.1
*Notes:
1. TC = 25oC
2. TJ = 175oC
0.01
0.001
RθJC = 3.5oC/W
3. Single Pulse
0.1
1
10
100 200
25
50
75
100
125
150
175
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Figure 11. Eoss vs. Drain to Source Voltage
5
4
3
2
1
0
0
25
50
75
100
VDS, Drain to Source Voltage [V]
www.fairchildsemi.com
FDPF045N10A Rev. C0
4
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve
5
1
0.5
0.2
0.1
0.05
0.1
0.01
PDM
0.02
0.01
t1
t2
*Notes:
1. ZθJC(t) = 3.5oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
0.001
10-5
10-4
10-3
Rectangular Pulse Duration [sec]
10-2
10-1
1
10
100
FDPF045N10A Rev. C0
5
www.fairchildsemi.com
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
www.fairchildsemi.com
FDPF045N10A Rev. C0
6
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
www.fairchildsemi.com
FDPF045N10A Rev. C0
7
Package Dimensions
TO-220F (Retractable)
* Front/Back Side Isolation Voltage : AC 2500V
Dimensions in Millimeters
www.fairchildsemi.com
FDPF045N10A Rev. C0
8
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
2Cool™
FlashWriter®
FPS™
*
PDP SPM™
The Power Franchise®
AccuPower™
Auto-SPM™
AX-CAP™*
Power-SPM™
PowerTrench®
PowerXS™
The Right Technology for Your Success™
®
F-PFS™
FRFET®
BitSiC®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
Gmax™
Programmable Active Droop™
TinyBoost™
TinyBuck™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
QFET®
QS™
Quiet Series™
RapidConfigure™
TinyCalc™
TinyLogic®
GTO™
IntelliMAX™
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
Current Transfer Logic™
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficentMax™
ESBC™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Motion-SPM™
mWSaver™
Saving our world, 1mW/kW at a time™
SignalWise™
SmartMax™
TranSiC®
TriFault Detect™
TRUECURRENT®*
ꢁSerDes™
SMART START™
SPM®
STEALTH™
®
SuperFET®
Fairchild®
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS®
SyncFET™
Sync-Lock™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
OptiHiT™
OPTOLOGIC®
OPTOPLANAR®
®
FAST®
FastvCore™
FETBench™
®*
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I55
www.fairchildsemi.com
9
FDPF045N10A Rev. C0
相关型号：
FDPF10N50UT
Power Field-Effect Transistor, 8A I(D), 500V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220F, 3 PIN
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明