FDPF20N50FT [FAIRCHILD]
N-Channel UniFETTM FRFET® MOSFET 500 V, 20 A, 260 mï; N沟道UniFETTM FRFET® MOSFET的500 V ， 20 A ， 260英里????
| 型号： | FDPF20N50FT |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | N-Channel UniFETTM FRFET® MOSFET 500 V, 20 A, 260 mï |
| 文件： | 总10页 (文件大小：429K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
March 2013
FDP20N50F / FDPF20N50FT
TM
®
N-Channel UniFET FRFET MOSFET
500 V, 20 A, 260 m
Features
Description
•
•
•
•
•
•
RDS(on) = 210 m (Typ.) @ VGS = 10 V, ID = 10 A
Low Gate Charge (Typ. 50 nC)
Low Crss (Typ. 27 pF)
UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. The body diode’s reverse recovery performance
of UniFET FRFET® MOSFET has been enhanced by lifetime
control. Its trr is less than 100nsec and the reverse dv/dt immu-
nity is 15V/ns while normal planar MOSFETs have over 200nsec
and 4.5V/nsec respectively. Therefore, it can remove additional
component and improve system reliability in certain applications
in which the performance of MOSFET’s body diode is significant.
This device family is suitable for switching power converter appli-
cations such as power factor correction (PFC), flat panel display
(FPD) TV power, ATX and electronic lamp ballasts.
100% Avalanche Aested
Improve dv/dt Capability
RoHS Compliant
Applications
•
•
•
•
LCD/LED/PDP TV
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
D
G
G
G
D
S
TO-220
D
TO-220F
S
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
VGSS
Parameter
FDP20N50F FDPF20N50FT Unit
Drain to Source Voltage
Gate to Source Voltage
500
±30
V
V
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- P uls ed
20
12.9
80
20*
12.9*
80*
ID
D r a in C u r r e n t
A
IDM
D rai n Cur rent
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
A
mJ
A
EAS
IAR
Single Pulsed Avalanche Energy
Avalanche Current
1110
20
EAR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
25
mJ
V/ns
W
W/oC
oC
20
(TC = 25oC)
- Derate above 25oC
250
2.0
38.5
0.3
PD
Power Dissipation
TJ, TSTG
TL
Operating and Storage Temperature Range
-55 to +150
300
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
oC
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
FDP20N50F FDPF20N50FT Unit
RJC
RCS
RJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Case to Sink, Typ.
0.5
0.5
3.3
-
oC/W
Thermal Resistance, Junction to Ambient, Max.
62.5
62.5
©2011 Fairchild Semiconductor Corporation
FDP20N50F/ FDPF20N50FT Rev. C1
1
www.fairchildsemi.com
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking
FDP20N50F
Device
Package
TO-220
Reel Size
Tape Width
Quantity
FDP20N50F
FDPF20N50FT
-
-
-
-
50
50
FDPF20N50FT
TO-220F
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250A, VGS = 0V, TJ = 25oC
500
-
-
-
-
V
BVDSS
Breakdown Voltage Temperature
Coefficient
I
D = 250A, Referenced to 25oC
0.7
V/oC
/
TJ
V
DS = 500V, VGS = 0V
-
-
-
-
-
-
10
IDSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
A
VDS = 400V, TC = 125oC
100
IGSS
VGS = ±30V, VDS = 0V
±100
nA
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
VGS = VDS, ID = 250A
VGS = 10V, ID = 10A
VDS = 20V, ID = 10A
3.0
-
5.0
0.26
-
V
S
Static Drain to Source On Resistance
Forward Transconductance
-
-
0.22
25
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
2550
350
27
3390
465
40
pF
pF
pF
nC
nC
VDS = 25V, VGS = 0V
f = 1MHz
Coss
Crss
Qg(tot)
Qgs
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
50
65
V
V
DS = 400V, ID = 20A
GS = 10V
14
-
Qgd
Gate to Drain “Miller” Charge
-
20
-
nC
(Note 4)
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
-
-
-
-
45
120
100
60
100
250
210
130
ns
ns
ns
ns
VDD = 250V, ID = 20A
G = 25
R
(Note 4)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
-
-
-
20
80
1.5
-
A
A
ISM
VSD
trr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, ISD = 20A
-
V
154
0.5
ns
C
VGS = 0V, ISD = 20A
dIF/dt = 100A/s
Qrr
Reverse Recovery Charge
-
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 5mH, I = 20A, V = 50V, R = 25, Starting T = 25C
AS
DD
G
J
3. I 20A, di/dt 200A/s, V BV
, Starting T = 25C
SD
DD
DSS
J
4. Essentially Independent of Operating Temperature Typical Characteristics
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©2011 Fairchild Semiconductor Corporation
FDP20N50F/ FDPF20N50FT Rev. C1
2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
100
80
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
150oC
10
5.5 V
25oC
10
1
*Notes:
*Notes:
1. 250s Pulse Test
1. VDS = 20V
2. TC = 25oC
2. 250s Pulse Test
1
0.3
0.1
4
5
6
7
8
1
10
20
VGS,Gate-Source Voltage[V]
VDS,Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
0.5
400
100
0.4
150oC
25oC
10
VGS = 10V
0.3
VGS = 20V
0.2
*Notes:
1. VGS = 0V
*Note: TJ = 25oC
50
ID, Drain Current [A]
2. 250s Pulse Test
1
0.0
0.1
0.5
1.0
1.5
2.0
2.5
0
25
75
VSD, Body Diode Forward Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
6000
4500
3000
1500
0
10
C
C
C
= C + C (C = shorted)
gs gd ds
iss
VDS = 100V
= C + C
ds gd
= C
gd
oss
rss
VDS = 250V
Coss
VDS = 400V
8
6
4
2
0
*Note:
1. VGS = 0V
2. f = 1MHz
Ciss
Crss
*Note: ID = 20A
40 50
0.1
1
10
50
0
10
20
30
60
VDS, Drain-Source Voltage [V]
Qg, Total Gate Charge [nC]
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©2011 Fairchild Semiconductor Corporation
FDP20N50F/ FDPF20N50FT Rev. C1
3
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. Maximum Safe Operating Area
- FDP20N50F
200
1.2
1.1
1.0
100
10 s
100 s
1 ms
10
1
10 ms
100 ms
Operation in This Area
is Limited by R DS(on)
DC
*Notes:
1. TC = 25oC
2. TJ = 150oC
0.9
0.1
0.01
*Notes:
1. VGS = 0V
2. ID = 1mA
3. Single Pulse
0.8
-100
1
10
100
800
-50
0
50
100
150
200
o
VDS, Drain-Source Voltage [V]
TJ, Junction Temperature [C]
Figure 9. Maximum Safe Operating Area
- FDPF20N50FT
Figure 10. Maximum Drain Current
vs. Case Temperature
200
100
25
20
15
10
5
40s
100s
10
1ms
10ms
1
Operation in This Area
is Limited by R DS(on)
DC
*Notes:
1. TC = 25oC
0.1
2. TJ = 150oC
3. Single Pulse
0.01
0
25
1
10
100
800
50
75
100
125
150
o
VDS, Drain-Source Voltage [V]
TC, Case Temperature [C]
Figure 11. Transient Thermal Response Curve - FDP20N50F
1
0.5
0.2
0.1
0.1
PDM
0.05
t1
t2
0.02
0.01
*Notes:
0.01
1. ZJC(t) = 0.5oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
single pulse
0.002
10-5
10-4
10-3
10-2
10-1
100
101
Rectangular Pulse Duration [sec]
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©2011 Fairchild Semiconductor Corporation
FDP20N50F/ FDPF20N50FT Rev. C1
4
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve - FDPF20N50FT
5
0.5
1
0.2
0.1
PDM
0.05
t1
t2
0.1
0.02
0.01
*Notes:
1. ZJC(t) = 3.3oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
Single pulse
0.01
10-4
10-3
10-2
10-1
100
101
102
103
Rectangular Pulse Duration [sec]
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©2011 Fairchild Semiconductor Corporation
FDP20N50F/ FDPF20N50FT Rev. C1
5
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
www.fairchildsemi.com
©2011 Fairchild Semiconductor Corporation
FDP20N50F/ FDPF20N50FT Rev. C1
6
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
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©2011 Fairchild Semiconductor Corporation
FDP20N50F/ FDPF20N50FT Rev. C1
7
Mechanical Dimensions
TO-220B03
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©2011 Fairchild Semiconductor Corporation
FDP20N50F/ FDPF20N50FT Rev. C1
8
Mechanical Dimensions
TO-220M03
Dimensions in Millimeters
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©2011 Fairchild Semiconductor Corporation
FDP20N50F/ FDPF20N50FT Rev. C1
9
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Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
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Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I64
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10
©2011 Fairchild Semiconductor Corporation
FDP20N50F/ FDPF20N50FT Rev. C1
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