FDS8949_F085 [FAIRCHILD]
Power Field-Effect Transistor, 6A I(D), 40V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8;
| 型号： | FDS8949_F085 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Power Field-Effect Transistor, 6A I(D), 40V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：418K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
February 2010
FDS8949_F085
tm
Dual N-Channel Logic Level PowerTrench® MOSFET
40V, 6A, 29mΩ
Features
General Description
These N-Channel Logic Level MOSFETs are produced
Max rDS(on) = 29mΩ at VGS = 10V
Max rDS(on) = 36mΩ at VGS = 4.5V
Low gate charge
using
Fairchild
Semiconductor’s
advanced
PowerTrench® process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
High performance trench technology for extremely low
rDS(on)
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
High power and current handling capability
Qualified to AEC Q101
Applications
RoHS compliant
Inverter
Power suppliers
D2
D2
D1
D1
G2
SO-8
S2
G1
S1
Pin 1
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
40
V
V
±20
(Note 1a)
(Note 3)
6
ID
A
20
EAS
Drain-Source Avalanche Energy
26
mJ
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
2
1.6
PD
W
(Note 1a)
(Note 1b)
0.9
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to 150
°C
Thermal Characteristics
RθJA
RθJA
RθJC
Thermal Resistance-Single operation, Junction to Ambient
(Note 1a)
81
135
40
Thermal Resistance-Single operation, Junction to Ambient (Note 1b)
°C/W
Thermal Resistance, Junction to Case
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape Width
Quantity
2500 units
FDS8949
FDS8949_F085
13’’
12mm
©2010 Fairchild Semiconductor Corporation
FDS8949_F085 Rev. A
1
www.fairchildsemi.com
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V
40
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250µA, referenced to 25°C
VDS = 32V, VGS = 0V
TJ = 55°C
VGS = ±20V,VDS = 0V
33
mV/°C
1
µA
µA
nA
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
10
±100
On Characteristics (Note 2)
VGS(th)
Gate to Source Threshold Voltage VGS = VDS, ID = 250µA
1
1.9
3
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
ID = 250µA, referenced to 25°C
Temperature Coefficient
-4.6
mV/°C
VGS = 10V, ID = 6A
21
26
29
22
29
36
43
rDS(on)
gFS
Drain to Source On Resistance
Forward Transconductance
VGS = 4.5V, ID = 4.5A
VGS = 10V, ID = 6A,TJ = 125°C
VDS = 10V,ID = 6A
mΩ
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
715
105
60
955
140
90
pF
pF
pF
Ω
VDS = 20V, VGS = 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
f = 1MHz
1.1
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
9
5
18
10
37
6
ns
ns
VDD = 20V, ID = 1A
VGS = 10V, RGEN = 6Ω
Turn-Off Delay Time
Fall Time
23
3
ns
ns
Qg
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller”Charge
7.7
2.4
2.8
11
nC
nC
nC
Qgs
Qgd
VDS = 20V, ID = 6A,VGS = 5V
Drain-Source Diode Characteristics and Maximum Ratings
VSD
trr
Source to Drain Diode Forward Voltage VGS = 0V, IS = 6A (note 2)
0.8
17
7
1.2
26
11
V
Reverse Recovery Time (note 3)
IF = 6A, diF/dt = 100A/µs
ns
nC
Qrr
Reverse Recovery Charge
Notes:
1: R
is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
θJA
drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
θJA
θJC
a) 81°C/W when
mounted on a 1in
pad of 2 oz copper
b) 135°C/W when mounted on a
minimum pad .
2
Scale 1:1 on letter size paper
2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%.
3: Starting T = 25°C, L = 1mH, I = 7.3A, V = 40V, V = 10V.
J
AS
DD
GS
FDS8949_F085 Rev. A
2
www.fairchildsemi.com
Typical Characteristics TJ = 25°C unless otherwise noted
20
16
12
8
3.0
2.5
2.0
1.5
1.0
0.5
PULSE DURATION = 300µs
DUTY CYCLE = 20%MAX
V
= 10V
GS
V
= 3.5V
GS
VGS = 3.0V
V
= 4.5V
GS
VGS = 3.5V
V
= 3.0V
GS
VGS = 4.5V
VGS = 10V
4
PULSE DURATION = 300µs
DUTY CYCLE = 20%MAX
0
0.0
0.5
1.0
1.5
2.0
2.5
0
4
8
12
16
20
ID, DRAIN CURRENT(A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
Figure 2. Normalized On-Resistance vs Drain
Current and Gate Voltage
1.6
1.4
1.2
1.0
0.8
0.6
70
PULSE DURATION = 300µs
DUTY CYCLE = 20%MAX
I
= 6A
D
I
D
= 3.5A
V
= 10V
GS
60
50
40
30
20
10
T = 125oC
J
T
J
= 25oC
-50 -25
0
25
50
75
100 125 150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance vs Junction
Temperature
Figure 4. On-Resistance vs Gate to Source
Voltage
20
100
PULSE DURATION = 300µs
DUTY CYCLE = 20%MAX
V
GS
= 0V
V
= 10V
16
12
8
DD
10
1
T = 125oC
J
T
J
= 25oC
T = 125oC
J
T
J
= 25oC
0.1
= -55oC
T
= -55oC
J
T
J
4
0.01
0
1.5
1E-3
2.0
2.5
3.0
3.5
4.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
V , BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs Source Current
FDS8949_F085 Rev. A
3
www.fairchildsemi.com
Typical Characteristics TJ = 25°C unless otherwise noted
103
10
V
DD
= 10V
C
iss
8
6
4
2
0
V
= 30V
DD
V
DD
= 20V
C
oss
102
C
rss
f = 1MHz
= 0V
V
GS
101
0.1
1
10
40
0
4
8
12
16
VDS, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE(nC)
g
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage
10
7
6
5
V
GS
= 10V
4
3
2
1
0
TJ = 25oC
1
V
= 4.5V
GS
TJ = 125oC
o
R
θJA
= 81 C/W
0.1
10-3
10-2
10-1
100
101
102
tAV, TIME IN AVALANCHE(ms)
103
25
50
75
100
125
o
150
T , Ambient TEMPERATURE ( C)
A
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain Current vs
Ambient Temperature
100
100
VGS = 10V
10
100us
1ms
SINGLE PULSE
= 135°C/W
10
R
1
0.1
θJA
10ms
T
= 25°C
A
LIMITED BY
PACKAGE
100ms
1s
SINGLE PULSE
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
T
J
= MAX RATED
SINGLE PULSE
10s
DC
o
T
= 25 C
A
1
0.01
0.7
10-4
10-3
10-2
t, PULSE WIDTH (s)
10-1
100
101
102
103
300
100
0.01
0.1
1
10
V
, DRAIN-SOURCE VOLTAGE (V)
DS
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
FDS8949_F085 Rev. A
4
www.fairchildsemi.com
Typical Characteristics TJ = 25°C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
P
0.1
(PK)
t
1
t
2
0.01
Rθ (t) = r(t)*Rθ
JA
JA
JA
o
Rθ = 135 C/W
T -T =P*Rθ
J A JA
DUTY FACTOR: D = t /t
1
2
SINGLE PULSE
1E-3
10-3
10-2
10-1
100
101
102
103
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
FDS8949_F085 Rev. A
5
www.fairchildsemi.com
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Saving our world, 1mW/W/kW at a time™
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®
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SPM
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Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
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First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
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Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I47
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FDS8949_F085 Rev. A
6
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