FDZ2554PZ [FAIRCHILD]
Monolithic Common Drain P-Channel 2.5V Specified PowerTrench BGA MOSFET; 单片共漏极P沟道2.5V指定的PowerTrench MOSFET BGA
| 型号： | FDZ2554PZ |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Monolithic Common Drain P-Channel 2.5V Specified PowerTrench BGA MOSFET |
| 文件： | 总6页 (文件大小：150K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
August 2004
FDZ2554PZ
Monolithic Common Drain P-Channel 2.5V Specified PowerTrench BGA MOSFET
General Description
Features
Combining Fairchild’s advanced 2.5V specified
PowerTrench process with state-of-the-art BGA
packaging, the FDZ2554PZ minimizes both PCB space
• –6.5 A, –20 V. RDS(ON) = 28 mΩ @ VGS = –4.5 V
RDS(ON) = 45 mΩ @ VGS = –2.5 V
and RDS(ON)
MOSFET embodies
technology which enables the device to combine
excellent thermal transfer characteristics, high current
handling capability, ultra-low profile packaging, low gate
.
This monolithic common drain BGA
breakthrough in packaging
• >4800V ESD Protection
• Occupies only 0.10 cm2 of PCB area:
a
1/3 the area of SO-8
• Ultra-thin package: less than 0.80 mm height when
mounted to PCB
charge, and low RDS(ON)
.
Applications
• Outstanding thermal transfer characteristics:
significantly better than SO-8
• Battery management
• Load switch
• Ultra-low Qg x RDS(ON) figure-of-merit
• High power and current handling capability
• Battery protection
S
D
S
D
S
S
S
D
S
S
S
Pin 1
G
Q2
Q1
Q1
G
S
D
G
D
S
D
S
D
Q2
Pin 1
G
S
Top
Bottom
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
Ratings
–20
Units
VDSS
Drain-Source Voltage
V
V
A
VGSS
ID
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
±12
–6.5
–20
2.1
(Note 1a)
(Note 1a)
PD
Power Dissipation (Steady State)
W
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
(Note 1)
60
6.3
0.6
RθJA
RθJB
RθJC
°C/W
Thermal Resistance, Junction-to-Ball
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
2554Z
FDZ2554PZ
7’’
12mm
3000 units
FDZ2554PZ Rev. C3 (W)
2004 Fairchild Semiconductor Corporation
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
–20
V
VGS = 0 V, ID = –250 µA
ID = –250 µA, Referenced to 25°C
Breakdown Voltage Temperature
Coefficient
–13
∆BVDSS
∆TJ
IDSS
mV/°C
Zero Gate Voltage Drain Current
Gate–Body Leakage
VDS = –16 V, VGS = 0 V
–1
µA
µA
IGSS
VGS = ±12 V, VDS = 0 V
±10
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
–0.6 –0.8
3
–1.5
V
VDS = VGS, ID = –250 µA
ID = –250 µA, Referenced to 25°C
Gate Threshold Voltage
Temperature Coefficient
∆VGS(th)
∆TJ
RDS(on)
mV/°C
Static Drain–Source
On–Resistance
VGS = –4.5 V, ID = –6.5 A
VGS = –2.5 V, ID = –5 A
VGS = –4.5 V, ID = –6.5 A, TJ=125°C
21
36
30
28
45
43
mΩ
gFS
Forward Transconductance
VDS = –5 V,
ID = –6.5 A
V GS = 0 V,
24
S
Dynamic Characteristics
Ciss
Coss
Crss
RG
Input Capacitance
1430
320
170
9.2
pF
pF
pF
Ω
VDS = –10 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS = 15 mV,
f = 1.0 MHz
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
15
9
26
18
ns
ns
VDD = –10 V,
VGS = –4.5 V,
ID = –1 A,
RGEN = 6 Ω
60
37
15
3
100
60
ns
ns
Qg
Qgs
Qgd
21
nC
nC
nC
VDS = –10 V,
VGS = –4.5 V
ID = –6.5 A,
4
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
–1.75
–1.2
A
V
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,IS = –1.75 A
(Note 2)
–0.7
ns
trr
Reverse Recovery Time
Reverse Recovery Charge
IF = –6.5 A,
diF/dt = 100 A/µs
25
10
Qrr
nC
Notes: 1.
RθJA is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the
junction to the circuit board side of the solder ball, RθJB, is defined for reference. For RθJC, the thermal reference point for the case is defined as the
top surface of the copper chip carrier. RθJC and RθJB are guaranteed by design while RθJA is determined by the user's board design.
a)
60°C/W when mounted
on a 1in2 pad of 2 oz
copper
b)
108°C/W when mounted
on a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDZ2554P Rev C3 (W)
Dimensional Outline and Pad Layout
FDZ2554P Rev C3 (W)
Typical Characteristics
1.8
1.6
1.4
1.2
1
20
VGS = - 4.5V
-3.0V
-3.5V
-2.5V
15
VGS = -2.5V
-2.0V
10
5
-3.0V
-3.5V
-4.0V
-4.5V
0
0.8
0
5
10
-ID, DRAIN CURRENT (A)
15
20
0
0.5
1
1.5
2
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.09
1.4
ID = -3.2A
ID = -6.5A
VGS = -4.5V
1.3
1.2
1.1
1
0.07
0.05
0.03
0.01
TA = 125oC
TA = 25oC
0.9
0.8
-50
-25
0
25
50
75
100
125
150
1.5
2
2.5
3
3.5
4
4.5
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
20
100
10
VGS = 0V
TA = 125oC
25oC
VDS = -5V
15
10
5
1
0.1
-55oC
TA = 125oC
0.01
0.001
0.0001
25oC
-55oC
0
0
0.2
0.4
0.6
0.8
1
1.2
0.5
1
1.5
2
2.5
-VSD, BODY DIODE FORWARD VOLTAGE (V)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDZ2554P Rev C3 (W)
Typical Characteristics
2000
1600
1200
800
400
0
5
f = 1MHz
VGS = 0 V
ID = -6.5A
VDS = -5V
4
3
2
1
0
-10V
-15V
Ciss
Coss
Crss
0
4
8
12
16
0
5
10
15
20
Qg, GATE CHARGE (nC)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
50
100
10
SINGLE PULSE
RθJA = 108°C/W
TA = 25°C
RDS(ON) LIMIT
1ms
40
10ms
100ms
30
20
10
0
1s
10s
1
DC
VGS = -4.5V
SINGLE PULSE
RθJA = 108oC/W
TA = 25oC
0.1
0.01
0.01
0.1
1
10
100
1000
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * RθJA
RθJA = 108 °C/W
0.2
0.1
0.1
0.05
0.02
P(pk)
t1
t2
0.01
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDZ2554P Rev C3 (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Power247™
PowerSaver™
PowerTrench
QFET
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
FAST
FASTr™
FPS™
FRFET™
GlobalOptoisolator™
GTO™
ActiveArray™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
QS™
QT Optoelectronics™ TinyLogic
Quiet Series™
RapidConfigure™
RapidConnect™
µSerDes™
TINYOPTO™
TruTranslation™
UHC™
HiSeC™
I2C™
i-Lo™
ImpliedDisconnect™
UltraFET
FACT Quiet Series™
SILENT SWITCHER VCX™
SMART START™
SPM™
OPTOLOGIC
OPTOPLANAR™
PACMAN™
POP™
Across the board. Around the world.™
The Power Franchise
ProgrammableActive Droop™
Stealth™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVESTHE RIGHTTO MAKE CHANGES WITHOUTFURTHER NOTICETOANY
PRODUCTS HEREINTO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUMEANYLIABILITY
ARISING OUTOFTHEAPPLICATION OR USE OFANYPRODUCTOR CIRCUITDESCRIBED HEREIN; NEITHER DOES IT
CONVEYANYLICENSE UNDER ITS PATENTRIGHTS, NORTHE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I11
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