FFA60UP20DNTU [FAIRCHILD]
60 A, 200 V, Ultrafast Dual Diode; 60 A， 200 V，超快双二极管
| 型号： | FFA60UP20DNTU |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 60 A, 200 V, Ultrafast Dual Diode |
| 文件： | 总4页 (文件大小：1942K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
September 2004
tm
FFA60UP20DN
60 A, 200 V, Ultrafast Dual Diode
Features
The FFA60UP20DN is an ultrafast diode with low forward
voltage drop and rugged UIS capability. This device is intended
for use as freewheeling and clamping diodes in a variety of
switching power supplies and other power switching applications.
It is specially suited for use in switching power supplies and
industrial applicationa as welder and UPS application.
•
•
•
•
•
Ultrafast Recovery, Trr = 32 ns (@ IF = 30 A)
Max. Forward Voltage, VF = 1.15 V (@ TC = 25°C)
Reverse Voltage: VRRM = 200 V
Avalanche Energy Rated
RoHS Compliant
Applications
•
•
•
•
Power Switching Circuits
Output Rectifiers
Freewheeling Diodes
TO-3PN
Switching Mode Power Supply
1. Anode 2.Cathode 3. Anode
1
2
3
Absolute Maximum Ratings (per diode) T =25°C unless otherwise noted
C
Symbol
Parameter
Value
200
30
Unit
V
V
Peak Repetitive Reverse Voltage
RRM
I
I
Average Rectified Forward Current
Non-repetitive Peak Surge Current
@ T = 100°C
A
F(AV)
FSM
C
300
A
60Hz Single Half-Sine Wave
T
T
Operating Junction and Storage Temperature
- 65 to +150
°C
J, STG
Thermal Characteristics
Symbol
Parameter
Value
Unit
R
Maximum Thermal Resistance, Junction to Case
1.4
°C/W
θJC
Electrical Characteristics (per diode) T =25 °C unless otherwise noted
C
Symbol
Parameter
Min.
Typ.
Max.
Unit
V
Maximum Instantaneous Forward Voltage
V
F
*
T
T
= 25 °C
= 100 °C
-
-
-
-
1.15
1.0
I
= 30 A
= 30 A
C
C
F
I
F
I
Maximum Instantaneous Reverse Current
@ rated V
µA
R
*
T
T
= 25 °C
= 100 °C
-
-
-
-
10
100
R
C
C
t
Reverse Recovery Time
Reverse Recovery Current
Reverse Recovery Charge
-
-
-
32
2.4
38.4
-
-
-
ns
A
nC
rr
I
rr
Q
rr
(I = 30 A, di/dt = 200 A/µs)
F
t
Maximum Reverse Recovery Time
-
-
-
40
-
ns
rr
(I =1 A, di/dt = 100 A/µs)
F
W
Avalanche Energy (L = 40 mH)
2
mJ
AVL
*Pulse Test: Pulse Width=300 µs, Duty Cycle=2%
©2004 Fairchild Semiconductor Corporation
Rev. A, August 2004
Typical Characteristics
10
1
100
TC = 100oC
TC = 100oC
10
TC = 25oC
TC = 25oC
0.1
1
0.01
0.001
0.1
0.0
0.5
1.0
1.5
2.0
0
50
100
150
200
Forward Voltage , VF [V]
Reverse Voltage , VR [V]
Figure 1. Typical Forward Voltage Drop
vs. Forward Current
Figure 2. Typical Reverse Current
vs. Reverse Voltage
40
35
30
25
500
Typical Capacitance
at 0V = 473.9 pF
IF = 30A
Tc = 25oC
400
200
0.1
1
10
100
100
500
di/dt [A/µs]
Reverse Voltage , VR [V]
Figure 4. Typical Reverse Recovery Time
vs. di/dt
Figure 3. Typical Junction Capacitance
35
30
25
20
15
10
5
6
5
4
3
2
1
0
IF = 30A
TC = 25oC
0
60
80
100
120
140
160
100
500
Case Temperature , TC [oC]
di/dt [A/µs]
Figure 6. Forward Current Derating Curve
Figure 5. Typical Reverse Recovery Current
vs. di/dt
©2004 Fairchild Semiconductor Corporation
Rev. A, August 2004
Mechanical Dimensions
TO-3PN
Dimensions in Millimeters
©2004 Fairchild Semiconductor Corporation
Rev. A, August 2004
©2004 Fairchild Semiconductor Corporation
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