FFB2907A [FAIRCHILD]
PNP Multi-Chip General Purpose Amplifier; PNP多芯片通用放大器
| 型号： | FFB2907A |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | PNP Multi-Chip General Purpose Amplifier |
| 文件： | 总5页 (文件大小：65K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Discr ete P OWER & Sign a l
Tech n ologies
FMB2907A
FFB2907A
MMPQ2907A
B4
E2
B2
C2
E1
E4
B3
E3
C1
B2
E2
C1
B1
E1
C4
C4
C3
C2
B1
B2
E2
C3
C2
pin #1
E1
B1
pin #1
C2
C1
C1
SuperSOT -6
SC70-6
Mark: .2F
SOIC-16
Mark: .2F
PNP Multi-Chip General Purpose Amplifier
This device is designed for use as a general purpose amplifier and switch requiring
collector currents to 500 mA. Sourced from Process 63.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
60
60
V
V
5.0
600
V
Collector Current - Continuous
mA
°C
Operating and Storage Junction Temperature Range
-55 to +150
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
FFB2907A
FMB2907A
MMPQ2907A
PD
RθJA
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Effective 4 Die
300
2.4
415
700
5.6
180
1,000
8.0
mW
mW/°C
°C/W
°C/W
°C/W
125
240
Each Die
1998 Fairchild Semiconductor Corporation
PNP Multi-Chip General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown
Voltage*
Collector-Base Breakdown Voltage
IC = 10 mA, IB = 0
C = 10 µA, IE = 0
60
V
V(BR)CBO
V(BR)EBO
IB
60
V
V
I
Emitter-Base Breakdown Voltage
Base Cutoff Current
5.0
IE = 10 µA, IC = 0
VCB = 30 V, VEB = 0.5 V
VCE = 30 V, VBE = 0.5 V
50
50
nA
nA
ICEX
Collector Cutoff Current
Collector Cutoff Current
ICBO
VCB = 50 V, IE = 0
VCB = 50 V, IE = 0, TA = 125°C
0.02
20
µA
µA
ON CHARACTERISTICS
hFE
DC Current Gain
IC = 0.1 mA, VCE = 10 V
IC = 1.0 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 150 mA, VCE = 10 V*
IC = 500 mA, VCE = 10 V*
75
100
100
100
50
300
Collector-Emitter Saturation Voltage* IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
0.4
1.6
1.3
2.6
V
V
V
V
VCE(sat)
VBE(sat)
Base-Emitter Saturation Voltage
IC = 150 mA, IB = 15 mA*
IC = 500 mA, IB = 50 mA
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
IC = 50 mA, VCE = 20 V,
f = 100 MHz
VCB = 10 V, IE = 0,
f = 100 kHz
VEB = 2.0 V, IC = 0,
f = 100 kHz
250
6.0
12
MHz
pF
Output Capacitance
Cobo
Cibo
Input Capacitance
pF
SWITCHING CHARACTERISTICS
Turn-on Time
Delay Time
Rise Time
VCC = 30 V, IC = 150 mA,
IB1 = 15 mA
30
8.0
20
80
60
20
ns
ns
ns
ns
ns
ns
ton
td
tr
Turn-off Time
Storage Time
Fall Time
VCC = 6.0 V, IC = 150 mA
IB1 = IB2 = 15 mA
toff
ts
tf
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
PNP Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
Collector-Emitter Saturation
Voltage vs Collector Current
500
400
300
200
100
0
0.5
VCE = 5V
β = 10
0.4
125 °C
0.3
25 °C
25 °C
0.2
125 ºC
0.1
- 40 °C
- 40 ºC
0
0.1
0.3
1
3
10
30
100 300
1
10
100
500
IC - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Base-Emitter Saturation
Voltage vs Collector Current
Base Emitter ON Voltage vs
Collector Current
1
1
0.8
0.6
0.4
0.2
0
0.8
0.6
0.4
0.2
0
- 40 ºC
25 °C
- 40 ºC
25 °C
125 ºC
125 ºC
= 10
β
V
= 5V
CE
1
10
100
500
0.1
1
10
25
I C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Collector-Cutoff Current
vs. Ambient Temperature
Input and Output Capacitance
vs Reverse Bias Voltage
100
10
20
V
= 35V
CB
16
12
8
1
C
ib
0.1
0.01
4
C
ob
0
25
50
75
100
º
125
0.1
1
10
50
TA- AMBIENT TEMPERATURE ( C)
REVERSE BIAS VOLTAGE (V)
PNP Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Switching Times
Turn On and Turn Off Times
vs Collector Current
vs Collector Current
250
500
I
I
c
c
IB1= IB2
=
IB1 = IB2=
10
10
200
150
100
50
400
300
200
100
0
V
= 15 V
V
= 15 V
cc
cc
t
s
t
f
t
r
t
off
t
d
t
on
0
10
100
- COLLECTOR CURRENT (mA)
1000
10
100
- COLLECTOR CURRENT (mA)
1000
I
I
C
C
Rise Time vs Collector
and Turn On Base Currents
Power Dissipation vs
Ambient Temperature
50
1
0.75
0.5
20
10
5
SOT-6
t
= 15 V
r
30 ns
60 ns
0.25
0
2
1
10
100
500
0
25
50
75
100
125
150
I
- COLLECTOR CURRENT (mA)
C
TEMPERATURE (oC)
PNP Multi-Chip General Purpose Amplifier
(continued)
Test Circuits
30 V
200 Ω
1.0 KΩ
0
- 16 V
50 Ω
≤ 200ns
FIGURE 1: Saturated Turn-On Switching Time Test Circuit
- 6.0 V
15 V
1 KΩ
37 Ω
1.0 KΩ
0
- 30 V
50 Ω
≤ 200ns
FIGURE 2: Saturated Turn-Off Switching Time Test Circuit
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