FFPF10U30DNTU [FAIRCHILD]

Rectifier Diode, 1 Phase, 2 Element, 10A, 300V V(RRM), Silicon, TO-220F, 3 PIN;
FFPF10U30DNTU
型号: FFPF10U30DNTU
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

Rectifier Diode, 1 Phase, 2 Element, 10A, 300V V(RRM), Silicon, TO-220F, 3 PIN

超快软恢复二极管 快速软恢复二极管 局域网 超快速软恢复能力电源
文件: 总4页 (文件大小:40K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
FFPF10U30DN  
Features  
Ultrafast with soft recovery  
Low forward voltage  
Applications  
Power switching circuits  
Output rectifiers  
Freewheeling diodes  
Switching mode power supply  
TO-220F  
1
2
3
1. Anode 2.Cathode 3. Anode  
ULTRA FAST RECOVERY POWER RECTIFIER  
Absolute Maximum Ratings (per diode) T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Peak Repetitive Reverse Voltage  
Value  
300  
10  
Units  
V
V
A
A
RRM  
I
I
Average Rectified Forward Current  
Non-repetitive Peak Surge Current  
@ T = 100°C  
C
F(AV)  
FSM  
100  
60Hz Single Half-Sine Wave  
T
T
Operating Junction and Storage Temperature  
- 65 to +150  
°C  
J, STG  
Thermal Characteristics  
Symbol  
Parameter  
Value  
Units  
R
Maximum Thermal Resistance, Junction to Case  
2.1  
°C/W  
θJC  
Electrical Characteristics (per diode) T =25 °C unless otherwise noted  
C
Symbol  
Parameter  
Min.  
Typ.  
Max.  
Units  
V
Maximum Instantaneous Forward Voltage  
V
FM  
*
I = 10A  
T
T
= 25 °C  
= 100 °C  
-
-
-
-
1.2  
1.1  
F
C
C
I = 10A  
F
I
Maximum Instantaneous Reverse Current  
µA  
RM  
*
@ rated V  
T
T
= 25 °C  
= 100 °C  
-
-
-
-
10  
100  
R
C
C
t
I
Q
Maximum Reverse Recovery Time  
Maximum Reverse Recovery Current  
Maximum Reverse Recovery Charge  
-
-
-
-
-
-
60  
4.5  
135  
ns  
A
nC  
rr  
rr  
rr  
(I =10A, di/dt = 200A/µs)  
F
W
Avalanche Energy  
1.0  
-
-
mJ  
AVL  
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, March 2001  
Typical Characteristics  
50  
1000  
100  
10  
TC = 100oC  
10  
TC = 100oC  
TC = 25oC  
1
1
TC = 25oC  
0.1  
0.01  
0.001  
0.1  
0.0  
0.5  
1.0  
1.5  
2.0  
0
50  
100  
150  
200  
250  
300  
Forward Voltage , VF [V]  
Reverse Voltage , VR [V]  
Figure 1. Typical Forward Voltage Drop  
vs. Forward Current  
Figure 2. Typical Reverse Current  
vs. Reverse Voltage  
250  
60  
50  
40  
30  
Typical Capacitance  
at 0V = 239 pF  
IF = 10A  
Tc = 25oC  
200  
150  
100  
50  
0
0.1  
1
10  
100  
100  
500  
di/dt [A/µs]  
Reverse Voltage , VR [V]  
Figure 4. Typical Reverse Recovery Time  
vs. di/dt  
Figure 3. Typical Junction Capacitance  
15  
10  
5
8
7
6
5
4
3
2
1
0
IF = 10A  
TC = 25oC  
0
60  
80  
100  
120  
140  
160  
100  
500  
Case Temperature , TC [oC]  
di/dt [A/µs]  
Figure 6. Forward Current Derating Curve  
Figure 5. Typical Reverse Recovery Current  
vs. di/dt  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, March 2001  
Package Dimensions  
TO-220F  
2.54 ±0.20  
10.16 ±0.20  
ø3.18 ±0.10  
(7.00)  
(0.70)  
(1.00x45°)  
MAX1.47  
0.80 ±0.10  
(30  
°
)
#1  
0.35 ±0.10  
+0.10  
–0.05  
0.50  
2.76 ±0.20  
2.54TYP  
2.54TYP  
[2.54 ±0.20  
]
[2.54 ±0.20]  
9.40 ±0.20  
Dimensions in Millimeters  
Rev. A, March 2001  
©2001 Fairchild Semiconductor Corporation  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not  
intended to be an exhaustive list of all such trademarks.  
SuperSOT™-3  
ACEx™  
Bottomless™  
CoolFET™  
CROSSVOLT™  
DenseTrench™  
DOME™  
EcoSPARK™  
E2CMOS™  
EnSigna™  
FAST®  
FASTr™  
FRFET™  
GlobalOptoisolator™  
GTO™  
OPTOPLANAR™  
PACMAN™  
SuperSOT™-6  
SuperSOT™-8  
SyncFET™  
TinyLogic™  
UHC™  
POP™  
PowerTrench®  
QFET™  
HiSeC™  
QS™  
UltraFET®  
VCX™  
ISOPLANAR™  
LittleFET™  
MicroFET™  
MICROWIRE™  
OPTOLOGIC™  
QT Optoelectronics™  
Quiet Series™  
SLIENT SWITCHER®  
SMART START™  
Stealth™  
FACT™  
FACT Quiet Series™  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY  
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;  
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR  
CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body,  
or (b) support or sustain life, or (c) whose failure to perform  
when properly used in accordance with instructions for use  
provided in the labeling, can be reasonably expected to  
result in significant injury to the user.  
2. A critical component is any component of a life support  
device or system whose failure to perform can be  
reasonably expected to cause the failure of the life support  
device or system, or to affect its safety or effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or In  
Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
©2001 Fairchild Semiconductor Corporation  
Rev. H2  

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