FGD4536TM [FAIRCHILD]
360 V PDP Trench IGBT; 360 V PDP沟道IGBT
| 型号： | FGD4536TM |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 360 V PDP Trench IGBT |
| 文件： | 总8页 (文件大小：1135K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
September 2013
FGD4536
360 V PDP Trench IGBT
Features
General Description
•
•
•
•
•
High Current Capability
Low Saturation Voltage: V
High Input Impedance
Fast Switching
Using novel trench IGBT technology, Fairchild’s new series of
trench IGBTs offer the optimum performance for consumer
appliances and PDP TV applications where low conduction and
switching losses are essential.
= 1.59 V @ I = 50 A
C
CE(sat)
RoHS Compliant
Applications
•
PDP TV, Consumer Appliances
C
G
TO-252/D-PAK
E
Absolute Maximum Ratings
Symbol
Description
Ratings
360
Unit
V
V
Collector to Emitter Voltage
Gate to Emitter Voltage
Pulsed Collector Current
V
V
A
CES
30
GES
o
@ T = 25 C
220
I
C
C pulse(1)*
o
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
@ T = 25 C
125
50
W
W
C
P
D
o
@ T = 100 C
C
o
T
T
-55 to +150
-55 to +150
C
J
o
C
stg
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
o
T
300
C
L
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
1.0
Unit
o
R
R
(IGBT)
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
-
-
C/W
JC
o
62.5
C/W
JA
Notes:
(1) Half Sine Wave, D < 0.01, pluse width < 1sec
* Ic_pluse limited by max Tj
©2011 Fairchild Semiconductor Corporation
FGD4536 Rev. C1
1
www.fairchildsemi.com
Package Marking and Ordering Information
Device Marking
FGD4536
Device
FGD4536TM
Package
TO252(D-PAK)
TO252(D-PAK)
Reel Size
380 mm
Tape Width
16 mm
Quantity
-
-
FGD4536
FGD4536TM_F065
380 mm
16 mm
Electrical Characteristics of the IGBT
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV
Collector to Emitter Breakdown Voltage
V
V
= 0V, I = 250 A
360
-
-
-
-
V
CES
GE
GE
C
BV
Temperature Coefficient of Breakdown
Voltage
CES
o
= 0V, I = 250 A
0.4
V/ C
C
T
J
I
Collector Cut-Off Current
G-E Leakage Current
V
V
= V
= V
, V = 0 V
-
-
-
-
100
A
CES
CE
GE
CES
GE
I
, V = 0 V
±400
nA
GES
GES
CE
On Characteristics
V
G-E Threshold Voltage
I
= 250 A, V = V
GE
2.4
-
3.3
4.0
-
V
V
GE(th)
C
CE
I
I
= 20 A, V = 15 V
1.19
C
C
GE
= 30 A, V = 15 V
GE
-
-
1.33
1.59
-
V
V
V
Collector to Emitter
Saturation Voltage
CE(sat)
I
= 50 A, V = 15 V,
GE
C
1.8
o
T
= 25 C
C
I
T
= 50 A, V = 15 V,
GE
C
-
1.66
-
V
o
= 125 C
C
Dynamic Characteristics
C
C
C
Input Capacitance
-
-
-
1295
56
-
-
-
pF
pF
pF
ies
V
= 30 V V = 0 V,
, GE
CE
Output Capacitance
oes
res
f = 1 MHz
Reverse Transfer Capacitance
43
Switching Characteristics
t
t
t
t
t
t
t
t
Turn-On Delay Time
Rise Time
-
-
-
-
-
-
-
-
-
-
-
5
20
41
182
5
-
-
-
-
-
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
nC
nC
nC
d(on)
V
R
= 200 V, I = 20 A,
CC
C
r
= 5 , V = 15 V,
G
GE
o
Turn-Off Delay Time
Fall Time
d(off)
ResistiveLoad,T =25 C
C
f
Turn-On Delay Time
Rise Time
d(on)
V
R
= 200 V, I = 20 A,
CC
C
21
43
249
47
5.4
15
r
= 5 , V = 15 V,
G
GE
o
Turn-Off Delay Time
Fall Time
d(off)
f
Resistive Load, T = 125 C
C
Q
Q
Q
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
g
V
V
= 200 V I = 20 A,
, C
= 15 V
CE
GE
ge
gc
©2011 Fairchild Semiconductor Corporation
FGD4536 Rev. C1
2
www.fairchildsemi.com
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Transfer Characteristics
Figure 5. Saturation Voltage vs. V
Figure 6. Saturation Voltage vs. V
GE
GE
©2011 Fairchild Semiconductor Corporation
FGD4536 Rev. C1
3
www.fairchildsemi.com
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. Case
Temperature at Variant Current Level
Figure 8. Capacitance Characteristics
Figure 9. Gate charge Characteristics
Figure 10. SOA Characteristics
Fgure 11. Turn-on Characteristics vs.
Gate Resistance
Figure 12. Turn-off Characteristics vs.
Gate Resistance
©2011 Fairchild Semiconductor Corporation
FGD4536 Rev. C1
4
www.fairchildsemi.com
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Collector Current
Figure 14. Turn-off Characteristics vs.
Collector Current
Figure 15. Switching Loss vs. Gate Resistance
Figure 16. Switching Loss vs. Collector Current
Figure 17. Turn off Switching SOA Characteristics
©2011 Fairchild Semiconductor Corporation
FGD4536 Rev. C1
5
www.fairchildsemi.com
Typical Performance Characteristics
Figure 18.Transient Thermal Impedance of IGBT
PDM
t1
t2
©2011 Fairchild Semiconductor Corporation
FGD4536 Rev. C1
6
www.fairchildsemi.com
Mechanical Dimensions
Figure 19. TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT252-003.
Dimensions in Millimeters
©2011 Fairchild Semiconductor Corporation
FGD4536 Rev. C1
7
www.fairchildsemi.com
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
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®*
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®
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ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
PowerTrench®
PowerXS™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficentMax™
ESBC™
TinyBoost®
Programmable Active Droop™
TinyBuck®
QFET®
TinyCalc™
QS™
TinyLogic®
Quiet Series™
RapidConfigure™
™
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
Saving our world, 1mW/W/kW at a time™
SignalWise™
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SMART START™
Solutions for Your Success™
SPM®
TranSiC™
TriFault Detect™
TRUECURRENT®*
SerDes™
Fairchild®
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FACT Quiet Series™
FACT®
MillerDrive™
STEALTH™
UHC®
Ultra FRFET™
UniFET™
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mWSaver®
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FAST®
FastvCore™
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OptoHiT™
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As used here in:
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and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
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2. A critical component in any component of a life support, device, or
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I66
©2011 Fairchild Semiconductor Corporation
FGD4536 Rev. C1
8
www.fairchildsemi.com
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