FGP20N6S2D [FAIRCHILD]
600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode; 600V ，开关电源II系列N沟道IGBT与反并联二极管StealthTM
| 型号： | FGP20N6S2D |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode |
| 文件： | 总9页 (文件大小：227K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
July 2002
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D
600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
General Description
Features
The FGH20N6S2D FGP20N6S2D, FGB20N6S2D are Low
Gate Charge, Low Plateau Voltage SMPS II IGBTs
combining the fast switching speed of the SMPS IGBTs
along with lower gate charge, plateau voltage and high
avalanche capability (UIS). These LGC devices shorten
delay times, and reduce the power requirement of the gate
drive. These devices are ideally suited for high voltage
switched mode power supply applications where low
conduction loss, fast switching times and UIS capability are
essential. SMPS II LGC devices have been specially
designed for:
• 100kHz Operation at 390V, 7A
• 200kHZ Operation at 390V, 5A
• 600V Switching SOA Capability
o
• Typical Fall Time. . . . . . . . . . . 85ns at TJ = 125 C
• Low Gate Charge . . . . . . . . . 30nC at V = 15V
GE
• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 100mJ
• Low Conduction Loss
•
•
•
•
•
•
Power Factor Correction (PFC) circuits
Full bridge topologies
Half bridge topologies
Push-Pull circuits
Uninterruptible power supplies
Zero voltage and zero current switching circuits
• Low E
on
• Soft Recovery Diode
IGBT (co-pack) formerly Developmental Type TA49332
(Diode formerly Developmental Type TA49469)
Symbol
Package
C
TO-247
E
C
E
TO-220AB
C
G
G
TO-263AB
G
G
E
E
COLLECTOR (FLANGE)
Device Maximum Ratings T = 25°C unless otherwise noted
C
Symbol
BV
Parameter
Collector to Emitter Breakdown Voltage
Collector Current Continuous, T = 25°C
Ratings
600
Units
V
CES
I
28
A
C25
C
I
Collector Current Continuous, T = 110°C
13
A
C110
C
I
Collector Current Pulsed (Note 1)
Gate to Emitter Voltage Continuous
Gate to Emitter Voltage Pulsed
40
A
CM
V
±20
V
GES
GEM
V
±30
V
SSOA
Switching Safe Operating Area at T = 150°C, Figure 2
35A at 600V
100
A
J
E
Pulsed Avalanche Energy, I = 7.0A, L = 4mH, V = 50V
mJ
W
AS
CE
DD
P
Power Dissipation Total T = 25°C
125
D
C
Power Dissipation Derating T > 25°C
1.0
W/°C
°C
°C
C
T
Operating Junction Temperature Range
Storage Junction Temperature Range
-55 to 150
-55 to 150
J
T
STG
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
©2002 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1
Package Marking and Ordering Information
Device Marking
20N6S2D
Device
Package
TO-247
Tape Width
N/A
Quantity
30
FGH20N6S2D
FGP20N6S2D
FGB20N6S2D
FGB20N6S2DT
20N6S2D
TO-220AB
TO-263AB
TO-263AB
N/A
50
20N6S2D
N/A
50
20N6S2D
24mm
800 units
Electrical Characteristics T = 25°C unless otherwise noted
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off State Characteristics
BV
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
I
= 250µA, V = 0
600
-
-
-
-
-
V
CES
C
GE
I
V
= 600V
T = 25°C
-
-
-
250
2.0
µA
mA
nA
CES
CE
J
T = 125°C
J
I
Gate to Emitter Leakage Current
V
= ± 20V
±250
GES
GE
On State Characteristics
V
Collector to Emitter Saturation Voltage
I
V
= 7.0A,
T = 25°C
-
-
-
2.2
1.9
1.9
2.7
2.2
2.7
V
V
V
CE(SAT)
C
J
= 15V
GE
T = 125°C
J
V
Diode Forward Voltage
I
= 7.0A
EC
EC
Dynamic Characteristics
Q
Gate Charge
I
V
= 7.0A,
V
V
= 15V
= 20V
-
-
30
38
36
45
nC
nC
V
G(ON)
C
GE
= 300V
CE
GE
V
Gate to Emitter Threshold Voltage
Gate to Emitter Plateau Voltage
I
I
= 250µA, V = 600V
3.5
-
4.3
6.5
5.0
8.0
GE(TH)
C
C
CE
V
= 7.0A, V = 300V
V
GEP
CE
Switching Characteristics
SSOA
Switching SOA
T = 150°C, R = 25Ω, V =
GE
35
-
-
A
J
G
15V, L = 0.5mH V = 600V
CE
t
Current Turn-On Delay Time
Current Rise Time
IGBT and Diode at T = 25°C,
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
7.7
4.5
87
-
ns
ns
ns
ns
µJ
µJ
µJ
ns
ns
ns
ns
µJ
µJ
µJ
ns
ns
d(ON)I
J
I
= 7A,
t
CE
-
-
rI
d(OFF)I
V
V
= 390V,
= 15V,
CE
GE
t
Current Turn-Off Delay Time
Current Fall Time
t
50
-
fI
R
= 25Ω
G
E
E
E
Turn-On Energy (Note 1)
Turn-On Energy (Note 1)
Turn-Off Energy (Note 2)
Current Turn-On Delay Time
Current Rise Time
25
-
ON1
ON2
OFF
L = 0.5mH
Test Circuit - Figure 26
85
-
58
75
-
t
IGBT and Diode at T = 125°C
7
d(ON)I
J
I
= 7A,
t
CE
4.5
120
85
-
rI
d(OFF)I
V
V
= 390V,
= 15V,
CE
GE
t
Current Turn-Off Delay Time
Current Fall Time
145
105
-
t
fI
R
= 25Ω
G
E
E
E
Turn-On Energy (Note 1)
Turn-On Energy (Note 1)
Turn-Off Energy (Note 2)
Diode Reverse Recovery Time
20
ON1
ON2
OFF
L = 0.5mH
Test Circuit - Figure 26
125
135
26
140
180
31
24
t
I
I
= 7A, dI /dt = 200A/µs
EC
rr
EC
EC
= 1A, dI /dt = 200A/µs
20
EC
Thermal Characteristics
R
Thermal Resistance Junction-Case
IGBT
-
-
1.0
2.2
°C/W
°C/W
θJC
Diode
NOTE:
1. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
is the turn-on loss
ON1
of the IGBT only. E
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
ON2
as the IGBT. The diode type is specified in figure 26.
2. Turn-Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of
OFF
the input pulse and ending at the point where the collector current equals zero (I = 0A). All devices were tested per
CE
JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produc-
es the true total Turn-Off Energy Loss.
©2002 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1
Typical Performance Curves
30
40
35
30
25
20
15
10
5
o
T
= 150 C, R = 25Ω, V = 15V, L = 500µH
G GE
J
V
= 15V
GE
25
20
15
10
5
0
0
25
50
75
100
125
150
0
100
200
300
400
500
600
700
o
T
, CASE TEMPERATURE ( C)
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
C
Figure 1. DC Collector Current vs Case
Temperature
Figure 2. Minimum Switching Safe Operating Area
210
180
150
120
90
12
10
8
700
o
T
75 C
o
C =
V
t
= 390V, R = 25Ω, T = 125 C
G J
CE
SC
400
V
= 15V
GE
V
= 10V
GE
I
SC
f
f
= 0.05 / (t
+ t
)
MAX1
MAX2
d(OFF)I
d(ON)I
100
= (P - P ) / (E
+ E
)
OFF
D
C
ON2
6
P
= CONDUCTION DISSIPATION
C
(DUTY FACTOR = 50%)
o
R
= 0.27 C/W, SEE NOTES
ØJC
4
o
T
= 125 C, R = 25Ω, L = 500µH, V = 390V
G CE
J
20
2
60
1
10
, COLLECTOR TO EMITTER CURRENT (A)
20
9
10
11
12
13
14
15
I
V
, GATE TO EMITTER VOLTAGE (V)
CE
GE
Figure 3. Operating Frequency vs Collector to
Emitter Current
Figure 4. Short Circuit Withstand Time
14
14
DUTY CYCLE < 0.5%, V = 15V
GE
DUTY CYCLE < 0.5%, V = 10V
GE
PULSE DURATION = 250µs
PULSE DURATION = 250µs
12
10
8
12
10
8
6
6
o
o
o
o
T
= 25 C
T
= 25 C
T
= 150 C
T = 150 C
J
J
J
J
4
4
2
2
o
o
T
= 125 C
T
= 125 C
J
J
0
0
0.50 0.75
1.0
1.25
1.5
1.75
2.0
2.25
2.5
2.75
0.50
0.75
1.0
1.25
1.5
1.75
2.0
2.25
2.5
V
, COLLECTOR TO EMITTER VOLTAGE (V)
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
CE
Figure 5. Collector to Emitter On-State Voltage
Figure 6. Collector to Emitter On-State Voltage
©2002 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1
Typical Performance Curves (Continued)
400
350
300
250
200
150
100
50
R
= 25Ω, L = 500µH, V = 390V
R
= 25Ω, L = 500µH, V = 390V
G
CE
G
CE
350
300
250
200
150
100
50
o
o
T
= 25 C, T = 125 C, V = 10V
J GE
J
o
T
= 125 C, V = 10V, V = 15V
J
GE
GE
o
o
o
T
= 25 C, V = 10V, V = 15V
J
GE
GE
T
= 25 C, T = 125 C, V = 15V
J
J
GE
0
0
0
2
4
6
8
10
12
14
0
2
4
6
8
10
12
14
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
Figure 7. Turn-On Energy Loss vs Collector to
Emitter Current
Figure 8. Turn-Off Energy Loss vs Collector to
Emitter Current
13
35
R
= 25Ω, L = 500µH, V = 390V
R = 25Ω, L = 500µH, V = 390V
G CE
G
CE
12
11
10
9
30
25
20
15
10
5
o
o
o
o
T
= 25 C, T = 125 C, V = 10V
J GE
T
= 25 C, T = 125 C, V = 10V
J GE
J
J
o
o
T
= 25 C, T = 125 C, V = 15V
J GE
J
8
7
o
o
T
= 25 C, T = 125 C, V =15V
J GE
J
6
0
0
2
4
6
8
10
12
14
0
2
4
6
8
10
12
14
I
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
CE
Figure 9. Turn-On Delay Time vs Collector to
Emitter Current
Figure 10. Turn-On Rise Time vs Collector to
Emitter Current
140
120
R
= 25Ω, L = 500µH, V = 390V
R
= 25Ω, L = 500µH, V = 390V
G
CE
G
CE
o
V
= 10V, V = 15V, T = 125 C
GE J
GE
120
100
80
100
80
o
T
= 125 C, V = 10V or 15V
GE
J
60
o
T
= 25 C, V = 10V or 15V
J
GE
o
V
= 10V, V = 15V, T = 25 C
GE
GE
J
60
40
0
2
4
6
8
10
12
14
0
2
4
6
8
10
12
14
I
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
CE
Figure 11. Turn-Off Delay Time vs Collector to
Emitter Current
Figure 12. Fall Time vs Collector to Emitter
Current
©2002 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1
Typical Performance Curves (Continued)
120
16
14
12
10
8
o
DUTY CYCLE < 0.5%, V = 10V
CE
I
= 1mA, R = 42.6Ω, T = 25 C
G(REF)
L
J
PULSE DURATION = 250µs
100
80
60
40
20
0
V
= 600V
CE
o
T
= 25 C
J
6
V
= 400V
CE
4
V
= 200V
10
CE
o
T
= 125 C
J
2
o
T
= -55 C
J
0
0
5
15
, GATE CHARGE (nC)
G
20
25
30
35
4
6
8
10
12
14
16
V
, GATE TO EMITTER VOLTAGE (V)
Q
GE
Figure 13. Transfer Characteristic
Figure 14. Gate Charge
0.8
0.6
0.4
10
o
T
= 125 C, L = 500µH, V = 390V, V = 15V
R
= 25Ω, L = 500µH, V = 390V, V = 15V
CE GE
J
CE
GE
G
E
= E
+ E
TOTAL
ON2 OFF
E
= E
+ E
OFF
TOTAL
ON2
I
= 14A
CE
1
I
= 14A
= 7A
CE
I
I
= 7A
= 3A
CE
CE
I
CE
CE
0.2
0
I
= 3A
0.1
0.05
1
10
100
1000
25
50
75
100
125
150
o
T
, CASE TEMPERATURE ( C)
R , GATE RESISTANCE (Ω)
G
C
Figure 15. Total Switching Loss vs Case
Temperature
Figure 16. Total Switching Loss vs Gate
Resistance
1.2
3.6
DUTY CYCLE < 0.5%
FREQUENCY = 1MHz
o
PULSE DURATION = 250µs, T = 25 C
3.4
3.2
3.0
2.8
2.6
2.4
2.2
2.0
J
1.0
0.8
0.6
0.4
0.2
0.0
I
= 14A
CE
C
IES
I
= 7A
CE
I
= 3A
CE
C
OES
C
RES
0
10
20
30
40
50
60
70
80
90
100
5
6
7
8
9
10
11
12
13
14
15
16
V
, COLLECTOR TO EMITTER VOLTAGE (V)
V
, GATE TO EMITTER VOLTAGE (V)
CE
GE
Figure 17. Capacitance vs Collector to Emitter
Voltage
Figure 18. Collector to Emitter On-State Voltage vs
Gate to Emitter Voltage
©2002 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1
Typical Performance Curves (Continued)
250
200
150
100
50
14
DUTY CYCLE < 0.5%,
PULSE DURATION = 250µs
dI /dt = 200A/µs, V = 390V
EC
CE
12
o
125 C t , t
b
rr
10
8
6
o
o
125 C
25 C t , t
b
rr
4
o
25 C
o
125 C t
2
0
a
o
25
t
a
0
0
2
4
6
8
10
12
14
0
0.5
1.0
1.5
2.0
2.5
3.0
V
, FORWARD VOLTAGE (V)
I
EC
, FORWARD CURRENT (A)
EC
Figure 19. Diode Forward Current vs Forward
Voltage Drop
Figure 20. Recovery Times vs Forward Current
160
500
V
= 390V
I
= 7A, V = 390V
CE
CE
EC
140
120
100
80
450
400
350
300
250
200
150
100
o
125 C, I = 7A
EC
o
125 C t
b
o
125 C, I = 3.5A
EC
o
25 C t
b
60
o
25 C, I = 7A
EC
40
o
125 C t
a
o
20
25 C, I = 3.5A
EC
o
25 C t
a
0
200
300
400
500
600
700
800
900
s)
1000
200
300
400
500
600
700
800
900
s)
1000
dI /dt, RATE OF CHANGE OF CURRENT (A/
µ
dI /dt, RATE OF CHANGE OF CURRENT (A/µ
EC
EC
Figure 21. Recovery Times vs Rate of Change of
Current
Figure 22. Stored Charge vs Rate of Change of
Current
6.0
10
V
= 390V, T = 125°C
V
= 390V, T = 125°C
CE J
CE
J
9
8
7
6
5
4
3
5.5
5.0
4.5
4.0
3.5
3.0
I
= 7A
EC
I
= 7A
EC
I
= 3.5A
EC
I
= 3.5A
EC
200
300
400
500
600
700
800
900
1000
200
300
400
500
600
700
800
900
1000
dI /dt, CURRENT RATE OF CHANGE (A/
µs)
dI /dt, CURRENT RATE OF CHANGE (A/µs)
EC
EC
Figure 23. Reverse Recovery Softness Factor vs
Rate of Change of Current
Figure 24. Maximum Reverse Recovery Current vs
Rate of Change of Current
©2002 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1
Typical Performance Curves (Continued)
0
10
0.50
0.20
0.10
t
1
P
D
-1
10
t
2
0.05
DUTY FACTOR, D = t / t
1
2
0.02
0.01
PEAK T = (P X Z
X R ) + T
J
D
θ
JC
θJC C
SINGLE PULSE
-2
10
-5
-4
-3
-2
-1
0
1
10
10
10
10
10
10
10
t , RECTANGULAR PULSE DURATION (s)
1
Figure 25. IGBT Normalized Transient Thermal Impedance, Junction to Case
Test Circuit and Waveforms
FGH20N6S2D
DIODE TA49469
90%
OFF
10%
V
GE
E
ON2
E
L = 500µH
V
CE
R
= 25Ω
G
90%
10%
+
I
CE
t
t
FGH20N6S2D
d(OFF)I
V
= 390V
rI
DD
t
fI
-
t
d(ON)I
Figure 26. Inductive Switching Test Circuit
Figure 27. Switching Test Waveforms
©2002 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1
Handling Precautions for IGBTs
Operating Frequency Information
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating
device performance for a specific application. Other
typical frequency vs collector current (ICE) plots are
possible using the information shown for a typical unit
in Figures 5, 6, 7, 8, 9 and 11. The operating
frequency plot (Figure 3) of a typical device shows
fMAX1 or fMAX2; whichever is smaller at each point.
The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge
of energy through the devices. When handling these
devices, care should be exercised to assure that the
static charge built in the handler’s body capacitance
is not discharged through the device. With proper
handling and application procedures, however,
IGBTs are currently being extensively used in
production by numerous equipment manufacturers in
military, industrial and consumer applications, with
virtually no damage problems due to electrostatic
discharge. IGBTs can be handled safely if the
following basic precautions are taken:
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadtime (the denominator) has been arbitrarily held
to 10% of the on-state time for a 50% duty factor.
Other definitions are possible. td(OFF)I and td(ON)I are
defined in Figure 27. Device turn-off delay can
establish an additional frequency limiting condition for
an application other than TJM. td(OFF)I is important
when controlling output ripple under a lightly loaded
condition.
1. Prior to assembly into a circuit, all leads should be
kept shorted together either by the use of metal
shorting springs or by the insertion into conduc-
tive material such as “ECCOSORBD™ LD26” or
equivalent.
2. When devices are removed by hand from their
carriers, the hand being used should be grounded
by any suitable means - for example, with a
metallic wristband.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2).
The allowable dissipation (PD) is defined by
PD = (TJM - TC)/RθJC. The sum of device switching
and conduction losses must not exceed PD. A 50%
duty factor was used (Figure 3) and the conduction
losses (PC) are approximated by PC = (VCE x ICE)/2.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed
from circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-
voltage rating of VGEM. Exceeding the rated VGE
can result in permanent damage to the oxide layer
in the gate region.
EON2 and EOFF are defined in the switching
waveforms shown in Figure 27. EON2 is the integral of
the instantaneous power loss (ICE x VCE) during turn-
on and EOFF is the integral of the instantaneous
power loss (ICE x VCE) during turn-off. All tail losses
are included in the calculation for EOFF; i.e., the
collector current equals zero (ICE = 0)
6. Gate Termination - The gates of these devices
are essentially capacitors. Circuits that leave the
gate open-circuited or floating should be avoided.
These conditions can result in turn-on of the
device due to voltage buildup on the input
capacitor due to leakage currents or pickup.
7. Gate Protection - These devices do not have an
internal monolithic Zener diode from gate to
emitter. If gate protection is required an external
Zener is recommended.
ECCOSORBD is a Trademark of Emerson and Cumming, Inc.
©2002 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx
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Power247
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QFET
QS
SPM
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SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
ImpliedDisconnect
ISOPLANAR
LittleFET
MicroFET
MicroPak
MICROWIRE
MSX
FACT
ActiveArray
Bottomless
CoolFET
CROSSVOLT
DOME
EcoSPARK
E2CMOSTM
EnSignaTM
FACT Quiet Series
â
FAST
â
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FRFET
GlobalOptoisolator
GTO
HiSeC
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I
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