FJA4310OTU [FAIRCHILD]

NPN Epitaxial Silicon Transistor; NPN外延硅晶体管
FJA4310OTU
型号: FJA4310OTU
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

NPN Epitaxial Silicon Transistor
NPN外延硅晶体管

晶体 晶体管
文件: 总5页 (文件大小:205K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
October 2008  
FJA4310  
NPN Epitaxial Silicon Transistor  
Audio Power Amplifier  
High Current Capability : IC=10A  
High Power Dissipation  
Wide S.O.A  
Complement to FJA4210  
TO-3P  
1
1.Base 2.Collector 3.Emitter  
Absolute Maximum Ratings*  
T
= 25°C unless otherwise noted  
a
Symbol  
Parameter  
Ratings  
200  
Units  
V
V
V
V
Collector-Base Voltage  
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
Base Current (DC)  
140  
V
6
V
I
I
10  
A
C
1.5  
A
B
P
Collector Dissipation (TC=25°C)  
Junction Temperature  
100  
W
°C  
°C  
C
T
T
150  
J
Storage Temperature  
- 55 ~ 150  
STG  
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
Electrical Characteristics* Ta=25°C unless otherwise noted  
Symbol  
BVCBO  
Parameter  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
Test Condition  
IC=5mA, IE=0  
Min.  
Typ.  
Max.  
Units  
V
200  
140  
6
BVCEO  
BVEBO  
ICBO  
IC=50mA, RBE=¥  
IE=5mA, IC=0  
V
V
VCB=200V, IE=0  
VEB=6V, IC=0  
10  
10  
mA  
mA  
IEBO  
Emitter Cut-off Current  
hFE  
* DC Current Gain  
VCE=4V, IC=3A  
IC=5A, IB=0.5A  
VCB=10V, f=1MHz  
VCE=5V, IC=1A  
50  
180  
0.5  
VCE(sat)  
Cob  
Collector-Emitter Saturation Voltage  
Output Capacitance  
V
250  
30  
pF  
fT  
Current Gain Bandwidth Product  
MHz  
* Pulse Test: Pulse Width£300ms, Duty Cycle£2%  
h
Classification  
FE  
Classification  
R
O
Y
hFE  
50 ~ 100  
70 ~ 140  
90 ~ 180  
© 2008 Fairchild Semiconductor Corporation  
FJA4310 Rev. C1  
www.fairchildsemi.com  
1
Typical Characteristics  
IB = 300mA IB = 250mA  
IB = 200mA  
1000  
100  
10  
10  
9
8
7
6
5
4
3
2
1
0
IB = 400mA  
VCE = 4 V  
IB = 150mA  
Ta = 25 o  
C
IB = 100mA  
Ta = 125 o  
C
Ta = - 25 o  
C
IB = 50mA  
IB = 20mA  
0.1  
1
10  
0
1
2
3
4
IC [A], COLLECTOR CURRENT  
VCE [V], COLLECTOR-EMITTER VOLTAGE  
Figure 1. Static Characterstic  
Figure 2. DC current Gain  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
1
IC = 10 IB  
Ta = 125 o  
C
0.1  
Ta = 25 o  
C
Ta = - 25 o  
C
IC= - 10A  
IC= - 5A  
0.01  
0.01  
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
0.1  
1
10  
IC [A], COLLECTOR CURRENT  
IB [A], BASE CURRENT  
Figure 3. VCE(sat) vs. IB Characteristics  
Figure 4. Collector-Emitter Saturation Voltage  
10  
t=10ms  
VCE = 4 V  
IC (Pulse)  
10  
8
6
IC (DC)  
t=100ms  
Ta = 25 o  
C
1
4
2
0
Ta = 125 o  
C
TC = 25oC  
Single Pulse  
Ta = - 25 o  
C
0.1  
10  
100  
0.0  
0.5  
1.0  
1.5  
VCE [V], COLLECTOR-EMITTER VOLTAGE  
VBE [V], Base-Emitter On VOLTAGE  
Figure 5. Base-Emitter On Voltage  
Figure 6. Forward Bias Safe Operating Area  
© 2008 Fairchild Semiconductor Corporation  
FJA4310 Rev. C1  
www.fairchildsemi.com  
2
Typical Characteristics (Continued)  
140  
120  
100  
80  
60  
40  
20  
0
0
25  
50  
75  
100  
125  
150  
175  
TC[oC], CASE TEMPERATURE  
Figure 7. Power Derating  
© 2008 Fairchild Semiconductor Corporation  
FJA4310 Rev. C1  
www.fairchildsemi.com  
3
Package Dimension (TO-3P)  
5.00  
4.60  
15.80  
15.40  
1.65  
1.45  
5.20  
4.80  
(R0.50)  
20.10  
19.70  
18.90  
18.50  
3.70  
3.30  
(1.85)  
2.20  
1.80  
2.60  
2.20  
20.30  
19.70  
3.20  
2.80  
1.20  
0.55  
0.80  
1
3
0.75  
0.55  
5.45  
5.45  
(R0.50)  
NOTES:  
A) THIS PACKAGE CONFORMS TO EIAJ  
SC-65 PACKAGING STANDARD.  
B) ALL DIMENSIONS ARE IN MILLIMETERS.  
C) DIMENSIONING AND TOLERANCING PER  
ASME14.5 1973.  
D) DIMENSIONS ARE EXCLUSIVE OF BURRS,  
MOLD FLASH, AND TIE BAR EXTRUSIONS.  
E) DRAWING FILE NAME: TO3P03AREV2.  
© 2008 Fairchild Semiconductor Corporation  
FJA4310 Rev. C1  
www.fairchildsemi.com  
4
TRADEMARKS  
The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and  
is not intended to be an exhaustive list of all such trademarks.  
ACEx®  
Green FPS™  
Green FPS™ e-Series™  
GTO™  
i-Lo™  
IntelliMAX™  
ISOPLANAR™  
MegaBuck™  
MICROCOUPLER™  
MicroFET™  
Power247®  
SuperSOT™-8  
SyncFET™  
Build it Now™  
CorePLUS™  
CROSSVOLT™  
CTL™  
Current Transfer Logic™  
EcoSPARK®  
POWEREDGE®  
Power-SPM™  
PowerTrench®  
Programmable Active Droop™  
QFET®  
The Power Franchise®  
TinyBoost™  
TinyBuck™  
TinyLogic®  
TINYOPTO™  
TinyPower™  
TinyPWM™  
TinyWire™  
µSerDes™  
UHC®  
QS™  
QT Optoelectronics™  
Quiet Series™  
RapidConfigure™  
SMART START™  
SPM®  
STEALTH™  
SuperFET™  
SuperSOT™-3  
SuperSOT™-6  
Fairchild®  
Fairchild Semiconductor®  
FACT Quiet Series™  
FACT®  
MicroPak™  
MillerDrive™  
Motion-SPM™  
OPTOLOGIC®  
FAST®  
FastvCore™  
FPS™  
FRFET®  
OPTOPLANAR®  
®
UniFET™  
VCX™  
PDP-SPM™  
Power220®  
Global Power ResourceSM  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS  
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF  
THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE  
UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF  
FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE  
PRODUCTS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR  
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body, or  
(b) support or sustain life, and (c) whose failure to perform  
when properly used in accordance with instructions for use  
provided in the labeling, can be reasonably expected to result  
in significant injury to the user.  
2.  
A critical component is any component of a life support  
device or system whose failure to perform can be reasonably  
expected to cause the failure of the life support device or  
system, or to affect its safety or effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
This datasheet contains the design specifications for product development.  
Specifications may change in any manner without notice.  
Advance Information  
Formative or In Design  
This datasheet contains preliminary data; supplementary data will be pub-  
lished at a later date. Fairchild Semiconductor reserves the right to make  
changes at any time without notice to improve design.  
Preliminary  
First Production  
Full Production  
Not In Production  
This datasheet contains final specifications. Fairchild Semiconductor reserves  
the right to make changes at any time without notice to improve design.  
No Identification Needed  
Obsolete  
This datasheet contains specifications on a product that has been discontin-  
ued by Fairchild semiconductor. The datasheet is printed for reference infor-  
mation only.  
Rev. I31  
© 2008 Fairchild Semiconductor Corporation  
FJA4310 Rev. C1  
www.fairchildsemi.com  
5

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