FJA4310OTU [FAIRCHILD]
NPN Epitaxial Silicon Transistor; NPN外延硅晶体管型号: | FJA4310OTU |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | NPN Epitaxial Silicon Transistor |
文件: | 总5页 (文件大小:205K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
October 2008
FJA4310
NPN Epitaxial Silicon Transistor
•
•
•
•
•
Audio Power Amplifier
High Current Capability : IC=10A
High Power Dissipation
Wide S.O.A
Complement to FJA4210
TO-3P
1
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings*
T
= 25°C unless otherwise noted
a
Symbol
Parameter
Ratings
200
Units
V
V
V
V
Collector-Base Voltage
CBO
CEO
EBO
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Base Current (DC)
140
V
6
V
I
I
10
A
C
1.5
A
B
P
Collector Dissipation (TC=25°C)
Junction Temperature
100
W
°C
°C
C
T
T
150
J
Storage Temperature
- 55 ~ 150
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics* Ta=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Test Condition
IC=5mA, IE=0
Min.
Typ.
Max.
Units
V
200
140
6
BVCEO
BVEBO
ICBO
IC=50mA, RBE=¥
IE=5mA, IC=0
V
V
VCB=200V, IE=0
VEB=6V, IC=0
10
10
mA
mA
IEBO
Emitter Cut-off Current
hFE
* DC Current Gain
VCE=4V, IC=3A
IC=5A, IB=0.5A
VCB=10V, f=1MHz
VCE=5V, IC=1A
50
180
0.5
VCE(sat)
Cob
Collector-Emitter Saturation Voltage
Output Capacitance
V
250
30
pF
fT
Current Gain Bandwidth Product
MHz
* Pulse Test: Pulse Width£300ms, Duty Cycle£2%
h
Classification
FE
Classification
R
O
Y
hFE
50 ~ 100
70 ~ 140
90 ~ 180
© 2008 Fairchild Semiconductor Corporation
FJA4310 Rev. C1
www.fairchildsemi.com
1
Typical Characteristics
IB = 300mA IB = 250mA
IB = 200mA
1000
100
10
10
9
8
7
6
5
4
3
2
1
0
IB = 400mA
VCE = 4 V
IB = 150mA
Ta = 25 o
C
IB = 100mA
Ta = 125 o
C
Ta = - 25 o
C
IB = 50mA
IB = 20mA
0.1
1
10
0
1
2
3
4
IC [A], COLLECTOR CURRENT
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characterstic
Figure 2. DC current Gain
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1
IC = 10 IB
Ta = 125 o
C
0.1
Ta = 25 o
C
Ta = - 25 o
C
IC= - 10A
IC= - 5A
0.01
0.01
0.0
0.4
0.8
1.2
1.6
2.0
0.1
1
10
IC [A], COLLECTOR CURRENT
IB [A], BASE CURRENT
Figure 3. VCE(sat) vs. IB Characteristics
Figure 4. Collector-Emitter Saturation Voltage
10
t=10ms
VCE = 4 V
IC (Pulse)
10
8
6
IC (DC)
t=100ms
Ta = 25 o
C
1
4
2
0
Ta = 125 o
C
TC = 25oC
Single Pulse
Ta = - 25 o
C
0.1
10
100
0.0
0.5
1.0
1.5
VCE [V], COLLECTOR-EMITTER VOLTAGE
VBE [V], Base-Emitter On VOLTAGE
Figure 5. Base-Emitter On Voltage
Figure 6. Forward Bias Safe Operating Area
© 2008 Fairchild Semiconductor Corporation
FJA4310 Rev. C1
www.fairchildsemi.com
2
Typical Characteristics (Continued)
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
TC[oC], CASE TEMPERATURE
Figure 7. Power Derating
© 2008 Fairchild Semiconductor Corporation
FJA4310 Rev. C1
www.fairchildsemi.com
3
Package Dimension (TO-3P)
5.00
4.60
15.80
15.40
1.65
1.45
5.20
4.80
(R0.50)
20.10
19.70
18.90
18.50
3.70
3.30
(1.85)
2.20
1.80
2.60
2.20
20.30
19.70
3.20
2.80
1.20
0.55
0.80
1
3
0.75
0.55
5.45
5.45
(R0.50)
NOTES:
A) THIS PACKAGE CONFORMS TO EIAJ
SC-65 PACKAGING STANDARD.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONING AND TOLERANCING PER
ASME14.5 1973.
D) DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH, AND TIE BAR EXTRUSIONS.
E) DRAWING FILE NAME: TO3P03AREV2.
© 2008 Fairchild Semiconductor Corporation
FJA4310 Rev. C1
www.fairchildsemi.com
4
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HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF
THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE
UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF
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PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to result
in significant injury to the user.
2.
A critical component is any component of a life support
device or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Advance Information
Formative or In Design
This datasheet contains preliminary data; supplementary data will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
Preliminary
First Production
Full Production
Not In Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
No Identification Needed
Obsolete
This datasheet contains specifications on a product that has been discontin-
ued by Fairchild semiconductor. The datasheet is printed for reference infor-
mation only.
Rev. I31
© 2008 Fairchild Semiconductor Corporation
FJA4310 Rev. C1
www.fairchildsemi.com
5
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