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FJC1386QTF [FAIRCHILD]

PNP Epitaxial Silicon Transistor; PNP外延硅晶体管
FJC1386QTF
型号： FJC1386QTF
厂家： FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述：

PNP Epitaxial Silicon Transistor
PNP外延硅晶体管

晶体 晶体管
文件： 总5页 (文件大小：444K)
中文：  中文翻译
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July 2005  
FJC1386  
PNP Epitaxial Silicon Transistor  
Low Saturation Transistor Medium Power Amplifier  
•
•
•
Complement to FJC2098  
High Collector Current  
Low Collector-Emitter Saturation Voltage  
Marking  
1 3  
8 6  
P Y  
W W  
SOT-89  
1
Weekly code  
Year code  
hFE grage  
1. Base 2. Collector 3. Emitter  
Absolute Maximum Ratings Ta = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCBO  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
-30  
-20  
-6  
V
VCEO  
VEBO  
IC  
V
V
-5  
A
PC  
Power Dissipation (Ta = 25°C)  
Junction Temperature  
0.5  
150  
W
°C  
°C  
TJ  
TSTG  
Storage Temperature  
-55 to +150  
Electrical Characteristics Ta = 25°C unless otherwise noted  
Symbol  
BVCBO  
BVCEO  
BVEBO  
ICBO  
Parameter  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector-Cutoff Current  
Test Condition  
Min.  
Max.  
Units  
IC = -50µA, IE = 0  
-30  
-20  
-6  
V
IC = -1mA, IB = 0  
IE = -50µA, IC = 0  
VCB = -20V, VB = 0  
VEB = -5V, IC = 0  
V
V
-0.5  
-0.5  
390  
-1.0  
-1.5  
µA  
µA  
IEBO  
Emitter-Cutoff Current  
hFE  
DC Current Gain  
VCE = -2V, IC =-0.5A  
IC = -4A, IB = -0.1A  
IC = -4A, IB = -0.1A  
80  
VCE (sat)  
VBE (sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
V
V
©2005 Fairchild Semiconductor Corporation  
FJC1386 Rev. C1  
1
www.fairchildsemi.com  
Thermal Characteristics Ta = 25°C unless otherwise noted  
Symbol  
RθJA  
Parameter  
Thermal Resistance, Junction to Ambient  
Max.  
250  
Units  
°C/W  
hFE Classification  
Classification  
P
Q
R
hFE  
80 ~ 180  
120 ~ 270  
180 ~ 390  
Package Marking and Ordering Information  
Device Marking  
Device  
FJC1386  
Package  
SOT-89  
Reel Size  
Tape Width  
Quantity  
4,000  
1386  
13”  
--  
2
www.fairchildsemi.com  
FJC1386 Rev. C1  
Typical Performance Characteristics  
Figure 1. Static Characteristic  
Figure 2. DC Current Gain  
-1400  
1000  
100  
10  
IB = -7mA  
VCE = - 2V  
Ta = 125oC  
Ta = 25oC  
-1200  
IB = -6mA  
-1000  
IB = -5mA  
-800  
IB = -4mA  
Ta = - 40oC  
-600  
IB = -3mA  
-400  
IB = -2mA  
-200  
IB = -1mA  
0
0
-2  
-4  
-6  
-8  
-10  
-12  
-14  
-16  
-10m  
-100m  
-1  
-10  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
IC [A], COLLECTOR CURRENT  
Figure 3. Collector-Emitter Saturation Voltage  
Figure 4. Base-Emitter Saturation Voltage  
-10  
-10  
IC = 10 IB  
IC = 10 IB  
-1  
Ta = 125oC  
-1  
Ta = - 40oC  
-100m  
Ta = 25oC  
Ta = - 40oC  
Ta = 25oC  
Ta = 125oC  
-10m  
-0.1  
-1m  
-1m  
-10m  
-100m  
-1  
-10  
-1m  
-10m  
-100m  
-1  
-10  
IC [A], COLLECTOR CURRENT  
IC [A], COLLECTOR CURRENT  
Figure 5. Base-Emitter On Voltage  
Figure 6. Power Derating  
-1.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
VCE = - 2V  
-1.6  
-1.4  
-1.2  
-1.0  
-0.8  
-0.6  
-0.4  
-0.2  
-0.0  
25°C  
125°C  
- 40°C  
-0.0  
-0.2  
-0.4  
-0.6  
-0.8  
-1.0  
-1.2  
-1.4  
0
25  
50  
75  
100  
125  
150  
175  
Ta [°C], AMIBIENT TEMPERATURE  
VBE [V], BASE-EMITTER VOLTAGE  
3
www.fairchildsemi.com  
FJC1386 Rev. C1  
Mechanical Dimensions  
SOT-89  
1.50 0.20  
4.50 0.20  
1.65 0.10  
(0.40)  
C0.2  
0.50 0.10  
0.40 0.10  
+0.10  
–0.05  
0.40  
1.50 TYP 1.50 TYP  
Dimensions in Millimeters  
4
www.fairchildsemi.com  
FJC1386 Rev. C1  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to  
be an exhaustive list of all such trademarks.  
ACEx™  
FAST®  
ISOPLANAR™  
LittleFET™  
PowerSaver™  
PowerTrench®  
QFET®  
SuperSOT™-8  
SyncFET™  
TinyLogic®  
TINYOPTO™  
TruTranslation™  
UHC™  
ActiveArray™  
Bottomless™  
Build it Now™  
CoolFET™  
FASTr™  
FPS™  
MICROCOUPLER™  
MicroFET™  
MicroPak™  
MICROWIRE™  
MSX™  
FRFET™  
GlobalOptoisolator™  
GTO™  
QS™  
QT Optoelectronics™  
Quiet Series™  
RapidConfigure™  
RapidConnect™  
µSerDes™  
CROSSVOLT™  
DOME™  
HiSeC™  
UltraFET®  
UniFET™  
EcoSPARK™  
E2CMOS™  
EnSigna™  
I2C™  
MSXPro™  
i-Lo™  
OCX™  
VCX™  
Wire™  
ImpliedDisconnect™  
IntelliMAX™  
OCXPro™  
SILENT SWITCHER®  
SMART START™  
SPM™  
FACT™  
OPTOLOGIC®  
OPTOPLANAR™  
PACMAN™  
POP™  
FACT Quiet Series™  
Stealth™  
Across the board. Around the world.™  
SuperFET™  
The Power Franchise®  
Power247™  
PowerEdge™  
SuperSOT™-3  
SuperSOT™-6  
Programmable Active Droop™  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY  
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT  
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR  
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.  
As used herein:  
2. A critical component is any component of a life support device  
or system whose failure to perform can be reasonably expected  
to cause the failure of the life support device or system, or to  
affect its safety or effectiveness.  
1. Life support devices or systems are devices or systems which,  
(a) are intended for surgical implant into the body, or (b) support  
or sustain life, or (c) whose failure to perform when properly used  
in accordance with instructions for use provided in the labeling,  
can be reasonably expected to result in significant injury to the  
user.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Advance Information  
Product Status  
Definition  
Formative or In  
Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
Rev. I16  
5
www.fairchildsemi.com  
FJC1386 Rev. C1  

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