FJC2098 [FAIRCHILD]
NPN Epitaxial Silicon Transistor; NPN外延硅晶体管
| 型号： | FJC2098 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | NPN Epitaxial Silicon Transistor |
| 文件： | 总4页 (文件大小：80K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FJC2098
Camera Strobe Flash Application
•
•
•
Complement to FJC1386
High Collector Current
Low Collector-Emitter Saturation Voltage
SOT-89
1. Base 2. Collector 3. Emitter
1
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
C
Symbol
Parameter
Value
Units
V
V
V
V
Collector-Base Voltage
50
CBO
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
20
V
CEO
EBO
6
5
V
I
A
C
P
Power Dissipation(T =25°C)
0.5
W
C
C
T
T
Junction Temperature
Storage Temperature
150
°C
°C
J
- 55 ~ 150
STG
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Test Condition
Min.
50
20
6
Typ.
Max.
Units
V
BV
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
I =50µA, I =0
CBO
CEO
EBO
C
E
BV
BV
I =1mA, I =0
V
C
B
I =50µA, I =0
V
E
C
I
I
V
=40V, V =0
0.5
0.5
390
1.0
1.2
µA
µA
CEO
EBO
CE
EB
CE
B
Emitter Cut-off Current
V
V
=5V, I =0
C
h
DC Current Gain
=2V, I =0.5A
120
FE
C
V
V
(sat)
(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Output Capacitance
I =4A, I =0.1A
V
V
CE
C
B
I =4A, I =0.1A
BE
C
B
C
V
=20V, I =0, f=1MHz
23
pF
OB
CB
E
h
Classification
FE
Classification
Q
R
h
120 ~ 270
180 ~ 390
FE
Marking
JAQ
h
grade
FE
©2003 Fairchild Semiconductor Corporation
Rev. A2, February 2003
Typical Characteristics
14
12
10
8
1000
100
10
IB=200mA
VCE=2V
Ta=125oC
Ta=25oC
Ta=-40oC
6
IB=20mA
4
2
0
0
2
4
6
8
10
0.01
0.1
1
10
100
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. DC current Gain
10
10
IC=40IB
IC=40IB
1
0.1
Ta=125oC
Ta=25oC
Ta=-40oC
1
Ta=25oC
Ta=125oC
Ta=-40oC
0.01
1E-3
0.1
0.01
0.01
0.1
1
10
0.1
1
10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter Saturation Voltage
1.8
100
VCE=2V
1.6
IE=0,f=1MHZ
80
1.4
1.2
25oC
Ta=125oC
-40oC
60
40
20
0
1.0
0.8
0.6
0.4
0.2
0.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1
10
100
VBE[V], BASE-EMITTER VOLTAGE
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Base-Emitter On Voltage
Figure 6. Common-Base Open-Circuit Output
Capacitance
©2003 Fairchild Semiconductor Corporation
Rev. A2, February 2003
Package Dimensions
SOT-89
1.50 ±0.20
4.50 ±0.20
1.65 ±0.10
(0.40)
C0.2
0.50 ±0.10
0.40 ±0.10
+0.10
–0.05
0.40
1.50 TYP 1.50 TYP
Dimensions in Millimeters
©2003 Fairchild Semiconductor Corporation
Rev. A2, February 2003
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
FACT™
ImpliedDisconnect™ PACMAN™
SPM™
ActiveArray™
Bottomless™
CoolFET™
CROSSVOLT™ FRFET™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
Across the board. Around the world.™
The Power Franchise™
FACT Quiet series™ ISOPLANAR™
POP™
Stealth™
FAST®
LittleFET™
MicroFET™
MicroPak™
Power247™
PowerTrench®
QFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
FASTr™
GlobalOptoisolator™ MICROWIRE™
QS™
GTO™
HiSeC™
I2C™
MSX™
MSXPro™
OCX™
QT Optoelectronics™ TinyLogic®
Quiet Series™
TruTranslation™
RapidConfigure™
RapidConnect™
UHC™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
UltraFET®
SILENT SWITCHER® VCX™
SMART START™
Programmable Active Droop™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2003 Fairchild Semiconductor Corporation
Rev. I2
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