FJN598JDD75Z [FAIRCHILD]
Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-92;型号: | FJN598JDD75Z |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-92 |
文件: | 总7页 (文件大小:117K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
FJN598J
Capacitor Microphone Applications
•
•
•
Especially Suited for use in Audio, Telephone Capacitor Microphones
Excellent Voltage Characteristic
Excellent Transient Characteristic
TO-92
1. Source 2. Gate 3. Drain
1
Si N-channel Junction FET
Absolute Maximum Ratings T =25°C unless otherwise noted
ꢀ
a
Symbol
Parameter
Ratings
-20
Units
V
Gate-Drain Voltage
Gate Current
V
GDO
I
I
10
mA
mA
mW
°C
G
Drain Current
1
D
P
Power Dissipation
Junction Temperature
Storage Temperature
150
D
T
T
150
J
-55 ~ 150
°C
STG
Electrical Characteristics T =25°C unless otherwise noted
ꢀ
a
Symbol
Parameter
Gate-Drain Breakdown Voltage
Gate-Source Cut-off Voltage
Drain Current
Test Condition
Min.
Typ.
Max.
Units
BV
I = -100uA
-20
V
GDO
G
V
(off)
V
=5V, I =1µA
-0.6
-1.5
800
V
GS
DS
DS
DS
DS
DS
D
I
V
V
V
V
=5V, V =0
100
0.4
µA
ms
pF
pF
DSS
GS
lY
l
Forward Transfer Admittance
Input Capacitance
=5V, V =0, f=1MHz
1.2
3.5
FS
GS
C
C
=5V, V =0, f=1MHz
GS
ISS
Output Capacitance
=5V, V =0, f=1MHz
0.65
RSS
GS
I
Classification
DSS
Classification
A
B
C
D
E
I
(µA)
100 ~ 170
150 ~ 240
210 ~ 350
320 ~ 480
440 ~ 800
DSS
©2000 Fairchild Semiconductor International
Rev. A. June 2000
Specified Test Circuit T =25°C unless otherwise noted
a
Symbol
Parameter
Test Condition
=10mV, f=1KHz
=10mV, f=1KHz
Min.
Typ.
-3
Max.
Units
dB
G
Voltage Gain
V
V
IN
∆G V
Reduced Voltage Characteristic
V
V
-1.2
-3.5
-1
dB
V
IN
=4.5V → 1.5V
CC
∆G F
Frequency Characteristic
Input Resistance
f=1KHz to 110Hz
f=1KHz
dB
MΩ
Ω
V
Z
Z
25
IN
O
Output Resistance
f=1KHz
700
THD
Total Harmonic Distortion
Output Noise Voltage
V
V
=30mV, f=1KHz
=0, A CURVE
1
%
IN
IN
V
-110
dB
NO
ꢊꢀꢁꢂꢋ
ꢅ
ꢁꢒꢓꢃꢅ
ꢁꢂꢓꢃꢅ
ꢀꢀ
ꢀꢀ
ꢅ
ꢀꢀꢁꢁꢂꢃꢄ
ꢏ
ꢐꢐꢑ
ꢔ
ꢎ
ꢅ
ꢆꢌꢍ
ꢈꢉꢀ
ꢅꢆꢅꢇ
ꢂꢋ
©2000 Fairchild Semiconductor International
Rev. A. June 2000
Typical Characteristics
ID-VDS
ID-VDS
1000
900
800
700
600
500
400
300
200
100
0
500
IDSS = 200µA
IDSS = 500µA
450
400
350
300
250
200
150
100
50
VGS = 0
VGS = -0.1V
VGS = 0
VGS = -0.2V
VGS = -0.3V
VGS = -0.4V
VGS = -0.1V
VGS = -0.2V
VGS = -0.3V
VGS = -0.6V
VGS = -0.4V
VGS = -0.5V
0
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
10
VDS[V], DRAIN-SOURCE VOLTAGE
VDS[V], DRAIN-SOURCE VOLTAGE
lyFSl - IDSS
ID-VGS
1.6
10
VDS = 5V
VDS = 5V
VGS = 0
f=1kHz
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1
0.1
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0.1
1
VGS[V], GATE-SOURCE VOLTAGE
IDSS[mA], DRAIN CURRENT
VGS(off) - IDSS
CISS - VDS
100
10
-
VDS = 5V
ID = 1µA
10
1
-
1
0.1
-
1
10
0.1
1
IDSS[mA], DRAIN CURRENT
VDS[V], DRAIN-SOURCE VOLTAGE
©2000 Fairchild Semiconductor International
Rev. A. June 2000
Typical Characteristics (continued)
PD - Ta
CRSS - VDS
200
175
150
125
100
75
10
VGS = 0
f = 1MHz
1
50
25
0
0.1
0
25
50
75
100
125
150
1
10
Ta[oC], AMBIENT TEMPERATURE
VDS[V], DRAIN-SOURCE VOLTAGE
VNO - IDSS
ZO - IDSS
-110
-112
-114
-116
-118
-120
700
600
500
400
300
200
ZO:VCC =4.5V
VIN = 10mV
f = 1kHz
VNO:VCC =4.5V
VI = 0, A CURVE
RL = 1KΩ
IDSS:VDS=5V
IDSS:VDS=5V
10
100
1000
10
100
1000
IDSS[µA], DRAIN CURRENT
IDSS[µA], DRAIN CURRENT
THD - IDSS
ZI - IDSS
36
34
32
30
28
26
100
10
1
ZI:VCC =4.5V
VIN = 10mV
f = 1kHz
THD:VCC = 4.5V
VIN = 30mV
f = 1kHz
IDSS:VDS=5V
IDSS:VDS = 5V
10
100
1000
100
1000
IDSS[µA], DRAIN CURRENT
µ
IDSS[ A], DRAIN CURRENT
©2000 Fairchild Semiconductor International
Rev. A. June 2000
Typical Characteristics (continued)
∆GVV - IDSS
GVV - IDSS
4
10
8
GV:VCC = 4.5V
VIN = 10mV
RL = 1kΩ
ꢀ
∆GVV:VCC = 4.5V 1.5V
VIN = 10mV
f = 1kHz
IDSS:VDS=5V
2
6
IDSS:VDS = 5V
4
0
-2
-4
-6
2
0
-2
-4
-6
-8
-10
10
100
1000
10
100
1000
IDSS[µA], DRAIN CURRENT
IDSS[µA], DRAIN CURRENT
THD - VIN
100
10
1
THD:VCC = 4.5V
VIN = 30mV
f = 1kHz
IDSS:VDS = 5V
IDSS = 100µA
IDSS = 200µA
IDSS = 400µA
0.1
0
40
80
120
160
200
240
VIN[mV], INPUT VOLTAGE
©2000 Fairchild Semiconductor International
Rev. A. June 2000
Package Dimensions
TO-92
+0.25
–0.15
4.58
0.46 ±0.10
+0.10
–0.05
1.27TYP
1.27TYP
0.38
[1.27 ±0.20
]
[1.27 ±0.20]
3.60 ±0.20
(R2.29)
Dimensions in Millimeters
©2000 Fairchild Semiconductor International
Rev. A. June 2000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
QFET™
QS™
QT Optoelectronics™
VCX™
FASTr™
ACEx™
GlobalOptoisolator™
GTO™
HiSeC™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
E2CMOSTM
EnSignaTM
FACT™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
POP™
FACT Quiet Series™
FAST®
PowerTrench®
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. F1
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