FJV1845ES62Z [FAIRCHILD]
Small Signal Bipolar Transistor, 0.00005A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon;型号: | FJV1845ES62Z |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | Small Signal Bipolar Transistor, 0.00005A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon |
文件: | 总5页 (文件大小:66K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
FJV1845
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
a
Symbol
Parameter
Value
120
Units
V
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
CBO
120
V
CEO
EBO
5
V
I
I
50
mA
mA
mW
°C
C
Base Current
10
B
P
Collector Dissipation
Junction Temperature
Storage Temperature
300
C
T
T
150
J
-55 ~ 150
°C
STG
Electrical Characteristics T =25°C unless otherwise noted
a
Symbol
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Test Condition
Min.
Typ.
Max.
50
Units
I
I
V
V
=120V, I =0
nA
nA
CBO
EBO
CB
EB
E
=5V, I =0
50
C
h
h
V
V
=6V, I =0.1mA
150
200
580
600
FE1
FE2
CE
CE
C
=6V, I =1mA
1200
0.65
0.3
C
V
V
(on)
Base-Emitter On Voltage
V
=6V, I =1mA
0.55
0.59
0.07
110
1.6
V
V
BE
CE
C
(sat)
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
I =10mA, I =1mA
C B
CE
f
V
=6V, I =1mA
50
MHz
pF
T
CE
CB
C
C
V
=30V, I =0, f=1MHz
2.5
ob
E
h
Classification
FE2
Classification
P
F
E
U
h
200 ~ 400
300 ~ 600
400 ~ 800
600 ~ 1200
FE2
©2001 Fairchild Semiconductor Corporation
Rev. A1, July 2001
Typical Characteristics
10
1.0
0.8
0.6
0.4
0.2
0.0
IB=16uA
IB=14uA
IB=12uA
IB=1.4uA
IB=1.2uA
IB=1.0uA
IB=0.8uA
8
6
4
2
0
IB=10uA
IB=0.6uA
IB=8uA
IB=6uA
IB=0.4uA
IB=0.2uA
IB=4uA
IB=2uA
0
1
2
3
4
5
0
20
40
60
80
100
VCE[V], COLLECTOR-EMITTER VOLTAGE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. Static Characteristic
1000
900
800
700
600
500
400
300
200
100
0
100
10
VCE = 6V
Pule Test
IC=10IB
Pulse Test
VBE(sat)
1
0.1
0.01
VCE(sat)
0.01
0.1
1
10
100
0.1
1
10
100
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 3. DC current Gain
Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
10k
f=1MHz
IE=0
VCE=6V
1k
100
10
1
0.1
1
10
100
0.1
1
10
100
VCB[V], COLLECTOR-BASE VOLTAGE
IE[mA], EMITTER CURRENT
Figure 5. Collector Output Capacitance
Figure 6. Current Gain Bandwidth Product
©2001 Fairchild Semiconductor Corporation
Rev. A1, July 2001
Typical Characteristics (Continued)
100
500
400
300
200
100
0
VCE = 6V
Pulse Test
10
1
0.1
0.01
0.4
0.5
0.6
0.7
0.8
0.9
0
25
50
75
100
125
150
175
Ta[oC], CASE TEMPERATURE
VBE[V], BASE-EMITTER VOLTAGE
Figure 7. Collector Current vs. Base-Emitter Voltage
Figure 8. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A1, July 2001
Package Demensions
SOT-23
0.40 ±0.03
0.03~0.10
0.38 REF
+0.05
–0.023
0.40 ±0.03
0.12
0.96~1.14
2.90 ±0.10
0.95 ±0.03 0.95 ±0.03
1.90 ±0.03
0.508REF
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. A1, July 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
FAST®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
OPTOPLANAR™
PACMAN™
POP™
STAR*POWER™
Stealth™
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
Power247™
PowerTrench®
QFET™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
SMART START™
UltraFET®
VCX™
FACT™
FACT Quiet Series™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H3
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