FJX2222A_10 [FAIRCHILD]
NPN Epitaxial Silicon Transistor; NPN外延硅晶体管
| 型号： | FJX2222A_10 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | NPN Epitaxial Silicon Transistor |
| 文件： | 总5页 (文件大小：164K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
May 2010
FJX2222A
NPN Epitaxial Silicon Transistor
Features
• General Purpose Transistor
• Collector-Emitter Voltage: VCEO = 40V
• Collector Dissipation: PC (max) = 325mW
3
Marking
S1P
2
1
SOT-323
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings Ta = 25°C unless otherwise noted
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Value
75
40
Units
V
V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
6
V
600
325
150
150
mA
mW
°C
PC
TJ
TSTG
Collector Power Dissipation
Junction Temperature
Storage Temperature
°C
Electrical Characteristics Ta = 25°C unless otherwise noted
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Parameter
Conditions
IC=10µA, IE=0
Collector-Emitter Breakdown Voltage IC=10mA, IB=0
Min.
Max.
Units
V
V
V
µA
Collector-Base Breakdown Voltage
75
40
6
Emitter-Base Breakdown Voltage
Collector Cut-off Current
* DC Current Gain
IE=10µA, IC=0
VCB=60V, IE=0
0.01
300
hFE
VCE=10V, IC=0.1mA
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=150mA
VCE=10V, IC=500mA
35
50
75
100
40
V
CE(sat)
BE(sat)
fT
* Collector-Emitter Saturation Voltage IC=150mA, IB=15mA
0.3
1.0
1.2
2.0
V
V
V
V
IC=500mA, IB=50mA
V
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=20mA, VCE=20V,
f=100MHz
0.6
300
MHz
© 2010 Fairchild Semiconductor Corporation
FJX2222A Rev. B2
www.fairchildsemi.com
1
Electrical Characteristics (Continued) Ta = 25°C unless otherwise noted
Symbol
Cob
Parameter
Output Capacitance
Conditions
Min.
4
Max.
8
4
Units
pF
dB
VCB=10V, IE=0, f=1MHz
NF
Noise Figure
Turn On Time
Turn Off Time
IC=100µA, VCE=10V,
RS=1KΩ, f=1kHz
tON
VCC=30V, IC=150mA,
VBE=0.5V, IB1=15mA
VCC=30V, IC=150mA,
IB1=IB2=15mA
35
ns
ns
tOFF
285
* Pulse Test: PW≤300µs, Duty Cycle≤2%
© 2010 Fairchild Semiconductor Corporation
FJX2222A Rev. B2
www.fairchildsemi.com
2
Typical Performance Characteristics
10000
10
1
VCE = 10V
IC = 10 IB
VBE(sat)
1000
100
10
0.1
0.01
VCE(sat)
1
10
100
1000
1
10
100
1000
IC[A], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Collector-Base Saturation Voltage
Base-Emitter Saturation Voltage
1000
12
10
8
I
= 0
fE= 1MHz
VCE = 20V
6
100
4
2
0
10
1
10
100
1000
1
10
100
VCB [V], COLLECTOR-BASE VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 3. Output Capacitance
Figure 4. Current Gain Bandwidth Product
© 2010 Fairchild Semiconductor Corporation
FJX2222A Rev. B2
www.fairchildsemi.com
3
Mechanical Dimensions
SOT-323
2.00±0.20
3°
1.25±0.10
2.10±0.10
0.90
0.95±0.15
±0.10
+0.05
0.05
–0.02
1.30±0.10
1.00±0.10
0.275±0.100
3°
+0.04
0.135
–0.01
0.10 Min
Dimensions in Millimeters
© 2010 Fairchild Semiconductor Corporation
FJX2222A Rev. B2
www.fairchildsemi.com
4
TRADEMARKS
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intended to be an exhaustive list of all such trademarks.
®
*
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status
Definition
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Advance Information
Preliminary
Formative / In Design
First Production
Full Production
Not In Production
No Identification Needed
Obsolete
Rev. I49
© Fairchild Semiconductor Corporation
www.fairchildsemi.com
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