FME6G10US60 [FAIRCHILD]

Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, 17PM-BA, 17 PIN;
FME6G10US60
元器件型号: FME6G10US60
生产厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述和应用:

Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, 17PM-BA, 17 PIN

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PDF文件: 总9页 (文件大小:639K)
下载文档:  下载PDF数据表文档文件
型号参数:FME6G10US60参数

FME6G15US60

TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 15A I(C)

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14 ETC

FME6G20US60

TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 20A I(C)

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19 ETC

FME6G30US60

TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 30A I(C)

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20 ETC

FMEB

DC-Filter, single pole

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10 SCHURTER

FMEC

DC-Filter, dual pole

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16 SCHURTER

FMEN-210A

Schottky Barrier Diode

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54 SANKEN

FMEN-210A_07

Schottky Barrier Diode

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7 SANKEN

FMEN-210B

Rectifier Diode,

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1 SANKEN

FMEN-215A

Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, Silicon, TO-220AB, TO-220F, 3 PIN

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0 SANKEN

FMEN-215A

Rectifier Diode, Schottky, 0.0075A, 100V V(RRM),

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0 ALLEGRO

FMEN-2208

Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 80V V(RRM), Silicon,

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0 SANKEN

FMEN-220A

Schottky Barrier Diode

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72 SANKEN

FMEN-220A_07

Schottky Barrier Diode

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11 SANKEN

FMEN-220B

Rectifier Diode,

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1 SANKEN

FMEN-2308

Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 80V V(RRM), Silicon,

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0 SANKEN