FMS6G20US60S [FAIRCHILD]
Compact & Complex Module; 紧凑型和复合模块
| 型号： | FMS6G20US60S |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Compact & Complex Module |
| 文件： | 总10页 (文件大小：781K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
August 2005
FMS6G20US60S
Compact & Complex Module
Features
Description
•
•
•
•
•
•
•
Short Circuit Rated 10µs @ T = 100°C, V = 15V
Fairchild IGBT Power Module provides low conduction and
switching losses as well as short circuit ruggedness. It’s
designed for the applications such as motor control and general
inverters where short-circuit ruggedness is required.
C
GE
High Speed Switching
Low Saturation Voltage : V (sat) = 2.1 V @ I = 20A
CE
C
High Input Impedance
Built-in 1 Phase Rectifier Circuit
Fast & Soft Anti-Parallel FWD
Built-in NTC Thermistor
Applications
•
•
•
•
AC & DC Motor Controls
General Purpose Inverters
Robotics
Servo Controls
4
5
21
19
17
23
24
20
18
13
16
14
15
9
10
8
7
3
6
NTC
11
12
Package Code : 25PM-AA
Internal Circuit Diagram
©2005 Fairchild Semiconductor Corporation
FMS6G20US60S Rev. B1
1
www.fairchildsemi.com
Absolute Maximum Ratings
T
= 25°C unless otherwise noted
C
Symbol
CES
Description
Collector-Emitter Voltage
FMS6G20US60S
Units
V
Inverter
V
V
600
Gate-Emitter Voltage
20
V
GES
I
I
I
I
Collector Current
@ T = 80°C
20
A
C
C
Pulsed Collector Current
40
A
CM (1)
F
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Short Circuit Withstand Time
Repetitive Peak Reverse Voltage
Average Output Rectified Current
Surge Forward Current
@ 1Cycle at 60Hz, Peak value Non-Repetitive
Energy pulse @ 1Cycle at 60Hz
Operating Junction Temperature
Storage Temperature Range
@ T = 80°C
20
A
C
40
A
FM
P
@ T
=
25°C
89
W
µs
V
D
C
T
@ T = 100°C
10
SC
C
Converter
Common
V
1600
30
RRM
I
I
A
O
300
A
FSM
2
2
I t
369
-40 to +150
-40 to +125
2500
A s
T
T
°C
°C
J
STG
V
Isolation Voltage
@ AC 1minute
@ M4
V
ISO
Mounting Torque
Mounting part Screw
2.0
N·m
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Package Marking and Ordering Information
Device Marking
FMS6G20US60S
Device
FMS6G20US60S
Package
25PM-AA
Reel Size
Tape Width
Quantity
--
--
--
(2) TMC2 Relibility test was done under -45°C ~ 125°C
2
www.fairchildsemi.com
FMS6G20US60S Rev. B1
Electrical Characteristics of IGBT @ Inverter
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
Collector-Emitter Breakdown Voltage
V
V
= 0V, I = 250µA
600
--
--
--
--
V
CES
GE
C
∆B
/
Temperature Coeff. of Breakdown
Voltage
= 0V, I = 1mA
0.6
V/°C
VCES
J
GE
C
∆T
I
I
Collector Cut-Off Current
V
V
= V
= V
, V = 0V
--
--
--
--
250
µA
CES
GES
CE
CES
GE
Gate - Emitter Leakage Current
, V = 0V
± 100
nA
GE
GES
CE
On Characteristics
V
V
Gate - Emitter Threshold Voltage
I
I
= 20mA, V = V
GE
5.0
--
6.5
2.1
8.5
2.7
V
V
GE(th)
C
C
CE
Collector to Emitter Saturation Voltage
= 20A,
V
= 15V
GE
CE(sat)
Dynamic Characteristics
C
C
C
Input Capacitance
V
= 30V V = 0V,
--
--
--
1277
98
--
--
--
pF
pF
pF
ies
CE
,
GE
f = 1MHz
Output Capacitance
oes
res
Reverse Transfer Capacitance
21
Switching Characteristics
t
t
t
t
Turn-On Delay Time
Rise Time
V
= 300 V, I = 20A,
--
--
--
--
--
--
--
--
--
--
--
--
10
65
100
80
130
200
160
200
--
ns
ns
ns
ns
mJ
mJ
ns
ns
ns
ns
mJ
mJ
µs
d(on)
CC
G
C
R
= 10Ω, V = 15V,
GE
r
Inductive Load, T = 25°C
C
Turn-Off Delay Time
Fall Time
d(off)
f
100
0.45
0.42
70
E
E
Turn-On Switching Loss
Turn-Off Switching Loss
Turn-On Delay Time
Rise Time
on
--
off
t
t
t
t
V
R
= 300 V, I = 20A,
140
200
220
350
--
d(on)
r
CC
G
C
= 10Ω, V = 15V,
GE
100
110
210
0.5
0.72
--
Inductive Load, T = 125°C
C
Turn-Off Delay Time
Fall Time
d(off)
f
E
E
Turn-On Switching Loss
Turn-Off Switching Loss
Short Circuit Withstand Time
on
--
off
T
V
= 300 V, V = 15V
--
sc
CC
GE
@ T = 100°C
C
Q
Total Gate Charge
V
V
= 300 V, I = 20A,
--
--
--
55
10
20
65
15
30
nC
nC
nC
g
CE
GE
C
= 15V
Q
Q
Gate-Emitter Charge
Gate-Collector Charge
ge
gc
3
www.fairchildsemi.com
FMS6G20US60S Rev. B1
Electrical Characteristics of DIODE @ Inverter
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
V
Diode Forward Voltage
I
= 20A
T
T
T
T
T
T
T
T
=
25°C
= 100°C
25°C
= 100°C
25°C
= 100°C
25°C
= 100°C
--
--
--
--
--
--
--
--
1.9
2.0
75
2.8
V
ns
A
FM
F
C
C
C
C
C
C
C
C
--
t
I
Diode Reverse Recovery Time
I = 20A
=
150
--
rr
F
di / dt = 40 A/µs
110
1.3
1.8
50
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
=
2.6
--
rr
Q
=
195
--
nC
rr
100
Electrical Characteristics of DIODE @ Converter T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
1.1
1.0
--
Max.
1.5
Units
V
V
Diode Forward Voltage
I
= 30A
T
T
T
T
=
25°C
= 100°C
25°C
= 100°C
--
--
--
--
FM
F
C
C
C
C
--
I
Repetitive Reverse Current
V
= V
RRM
=
8
mA
RRM
R
5
--
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Units
Inverter
R
R
R
Junction-to-Case (IGBT Part, per 1/6 Module)
--
1.4
2.3
1.3
--
°C/W
°C/W
°C/W
g
θJC
θJC
θJC
Junction-to-Case (DIODE Part, per 1/6 Module)
Junction-to-Case (DIODE Part, per 1/6 Module)
Weight of Module
--
Converter
Weight
--
60
NTC Thermistor Characteristics
Symbol
Parameter
Tol.
+/- 5 %
Typ.
4.7
Units
KΩ
Thermistor
R25
Rated Resistance @ Tc = 25°C
B(25/100)
B - Value
+/- 3 %
3530
4
www.fairchildsemi.com
FMS6G20US60S Rev. B1
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Saturation Voltage
Characteristics
60
60
20V
15V
Common Emitter
TC = 25℃
Common Emitter
50
40
30
20
10
0
50
VGE = 15V
12V
TC
= 25℃ ꢀꢀ
TC = 125℃ ------
40
30
20
10
0
V
= 10V
GE
0
2
4
6
8
1
10
Coll ect or - E mitt er Volt age, V [V]
Coll ect or - E mitt er Volt age, V [V]
CE
CE
Figure 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Figure 4. Transient Thermal Impedance
5
4
3
2
1
0
10
Common Emitter
VGE = 15V
FRD
40 A
1
I GBT
20 A
I
= 10 A
0.1
Si ngl e Pul se
( Ther mal r esponse)
0.01
-50
0
50
100
150
10-5
10-4
10-3
10-2
10-1
100
101
o
Case Te mper at ur e, T [ C]
Rectangular Pulse Duration [sec]
Figure 5. Saturation Voltage vs. VGE
20
Figure 6. Saturation Voltage vs. VGE
20
Common Emitter
TC = 25℃
Common Emitter
T
C = 125℃
16
16
12
8
12
8
40A
4
0
40A
4
20A
20A
I
= 10A
8
I
= 10A
C
C
0
0
4
8
12
16
20
0
4
12
16
20
Gat e - E mitt er Volt age, V [V]
Gat e - E mitt er Volt age, V [V]
GE
GE
5
www.fairchildsemi.com
FMS6G20US60S Rev. B1
Typical Performance Characteristics (Continued)
Figure 7. Capacitance Characteristics
Figure 8. Turn-On Characteristics vs. Gate
Resistance
1000
3000
Common Emitter
VCC = 300V, VGE = ± 15V
IC = 20A
Common Emitter
2700
2400
2100
1800
1500
1200
900
Ci es
VGE = 0 V, f = 1 MHz
TC = 25 o
C
TC
= 25℃ ꢀꢀ
Ton
Tr
TC = 125℃ ------
Coes
Cr es
100
600
300
0
0. 1
1
10
10
20
30
40
50
60
70
80
90 100
Coll ect or - E mitt er Volt age, V [V]
Gat e Resi st ance, Rg[ ]
CE
Ω
Figure 9. Turn-Off Characteristics vs.
Gate Resistance
Figure 10. Switching Loss vs. Gate Resistance
Common Emitter
Common Emitter
VCC = 300V, VGE = ± 15V
IC = 20A
VCC = 300V, VGE = ± 15V
IC = 20A
1000
TC
= 25℃ ꢀꢀ
TC
= 25℃ ꢀꢀ
TC = 125℃ ------
TC = 125℃ ------
1000
Eoff
Toff
Tf
Eon
Eoff
100
100
10
20
30
40
50
60
70
80
90 100
10
20
30
40
50
60
70
80
90 100
Gat e Resi st ance, Rg[
]
Gat e Resi st ance, Rg[
]
Ω
Ω
Figure 11. Turn-On Characteristics vs.
Collector Current
Figure 12. Turn-Off Characteristics vs.
Collector Current
1000
Common Emitter
Common Emitter
VGE = ± 15V, RG = 10Ω
V
GE = ± 15V, RG = 10Ω
TC
= 25℃ ꢀꢀ
TC
= 25℃ ꢀꢀ
1000
100
10
TC = 125℃ ------
TC = 125℃ ------
Toff
Ton
Tr
Tf
100
10
15
20
25
30
35
40
10
15
20
25
30
35
40
Coll ect or Curr ent, I [A]
Coll ect or Curr ent, I [A]
C
6
www.fairchildsemi.com
FMS6G20US60S Rev. B1
Typical Performance Characteristics (Continued)
Figure 13. Switching Loss vs. Collector Current
Figure 14. Gate Charge Characteristics
10000
15
Common Emitter
Common Emitter
V
= 100 V
V
GE = ± 15V, RG = 10Ω
RL = 15 Ω
300 V
C
TC = 25 o
C
12
9
TC
= 25℃ ꢀꢀ
TC = 125℃ ------
200 V
Eoff
Eoff
1000
6
Eon
3
100
0
10
15
20
25
30
35
40
0
10
20
30
40
50
60
Coll ect or Curr ent, I [A]
Gat e Char ge, Q [nC]
C
Figure 15. SOA Characteristics
Figure 16. RBSOA Characteristics
80
100
IC MAX. (Pulsed)
50us
IC MAX. (Continuous)
10
100us
1 ms
10
DC Operation
1
0.1
1
Single Nonrepetitive
Pulse TC = 25℃
Single Nonrepetitive
Curves must be derated
linearly with increase
in temperature
Pulse TJ
≤
125℃
VGE
= 15V
RG = 10 Ω
0.01
0.1
0.3
1
10
100
1000
0
100
200
300
400
500
600
700
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Figure 17. Forward Characteristics
Figure 18. Reverse Recovery Characteristics
20
40
Common Cathode
VGE = 0V
35
10
Trr
TC
= 25℃
TC = 125℃
30
25
20
15
10
5
Irr
1
Common Cathode
di/dt = 40A/us
TC
= 25℃
TC = 100℃ --------
0.1
0
3
6
9
12
15
18
21
0
1
2
3
4
Forward Voltage, VF [V]
Forward Current, IF [A]
7
www.fairchildsemi.com
FMS6G20US60S Rev. B1
Typical Performance Characteristics (Continued)
Figure 19. Rectifier (Converter) Characteristics
Figure 20. Rectifier (Converter) Characteristics
100
1000
100
TC =125℃
25℃
TC = 125℃
10
10
1
1
0. 1
25℃
0. 01
0. 1
1E-3
0. 4
0. 6
0. 8
1. 0
1. 2
1. 4
0
400
800
1200
1600
VF, Instantaneous Voltage [V]
VR, Reverse Voltage [V]
Figure 21. NTC Characteristics
16
12
8
4
0
0
25
50
75
100
125
o
Te mper at ur e, T [ C]
8
www.fairchildsemi.com
FMS6G20US60S Rev. B1
Mechanical Dimensions
25PM-AA
-. Pin Coordinate
Coordinate
Pin
#No
x
y
Name Plate
1
0.0
0.0
0.0
2
-3.0
3
-6.0
0.0
4
-13.0
-18.0
-25.0
-29.0
-32.0
-35.0
-38.0
-46.5
-49.5
-49.5
-49.5
-49.5
-32.0
-29.0
-23.0
-20.0
-14.0
-11.0
3.5
0.0
82.2 0.20
71.0+-00..1200
57.0 0.20
5
0.0
4-Ø6.0
6
0.0
4-Ø2.0 0.10 Dp 6.0
7
0.0
2-Ø4.3+-00..2000
Mounting-Hole
8
0.0
15
22
1
9
0.0
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
0.0
0.0
12
0.0
11.5
20.0
28.0
28.0
28.0
28.0
28.0
28.0
28.0
28.0
20.0
11.5
5.5
23.0 0.15
4.3 0.20
Ø1.0 0.05
3.5
3.5
3.5
* datum pin : #1
* Pin Tilt : 0.15
Dimensions in Millimeters
9
www.fairchildsemi.com
FMS6G20US60S Rev. B1
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to
be an exhaustive list of all such trademarks.
®
ACEx™
FAST
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
PowerSaver™
SuperSOT™-8
SyncFET™
®
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
FASTr™
PowerTrench
®
®
FPS™
QFET
QS™
TinyLogic
FRFET™
GlobalOptoisolator™
GTO™
TINYOPTO™
TruTranslation™
UHC™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
µSerDes™
CROSSVOLT™
DOME™
®
HiSeC™
UltraFET
2
EcoSPARK™
I C™
MSXPro™
UniFET™
VCX™
2
E CMOS™
i-Lo™
OCX™
®
EnSigna™
ImpliedDisconnect™
IntelliMAX™
OCXPro™
OPTOLOGIC
SILENT SWITCHER
Wire™
®
FACT™
SMART START™
SPM™
FACT Quiet Series™
OPTOPLANAR™
PACMAN™
POP™
Stealth™
Across the board. Around the world.™
SuperFET™
SuperSOT™-3
SuperSOT™-6
®
The Power Franchise
Power247™
PowerEdge™
Programmable Active Droop™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Definition
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I16
10
www.fairchildsemi.com
FMS6G20US60S Rev. B1
相关型号：
FMS72509MTC
PLL Based Clock Driver, 10 True Output(s), 0 Inverted Output(s), CMOS, PDSO24, TSSOP-24
FAIRCHILD
FMS72509MTCT
PLL Based Clock Driver, 10 True Output(s), 0 Inverted Output(s), PDSO24, TSSOP-24
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明